US5932905A
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Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1997-11-26
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Granted: 1999-08-03
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Expires: 2017-11-26
Abstract
Abstract Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (>40 at 20° C.) and relatively low second order voltage coefficient a 2 of the dielectric constant (a 2 <100 PPM V 2 at 20° C.). In preferred embodiments the dielectric material has nominal composition (BA x Sr y Ti 1--x--y )-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.
Inventors
- 👤 Henry Miles O'Bryan, Jr.
- 👤 Jeffrey Frederick Roeder
- 👤 Gregory T. Stauf
- 👤 Roderick Kent Watts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:15
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H10D1/682; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; Y; Y10; Y10S; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
88 words
An article comprising a thin film capacitor that comprises a first electrode on a substrate, a layer of oxide dielectric material disposed on the first electrode, and a second electrode disposed on the oxide dielectric material; CHARACTERIZED IN THAT a) the oxide dielectric material is non-perovskite Ba--Sr--Ti-oxide, with at least 60 atom % of a total metal content of the oxide being Ti; and b) the oxide has a dielectric constant K>40 at 20° C., and a second order voltage coefficient a 2 <100 ppm/V 2 at 20°.
Claim 2
Dependent Claim
88 words
An article comprising a thin film capacitor that comprises a first electrode on a substrate, a layer of oxide dielectric material disposed on the first electrode, and a second electrode disposed on the oxide dielectric material; CHARACTERIZED IN THAT a) the oxide dielectric material is non-perovskite Ba--Sr--Ti-oxide, with at least 60 atom % of a total metal content of the oxide being Ti; and b) the oxide has a dielectric constant K>40 at 20° C., and a second order voltage coefficient a 2 <100 ppm/V 2 at 20°.
Claim 3
Dependent Claim
37 words
An article according to claim 1, wherein the Ba--Sr--Ti-oxide has nominal composition (Ba x Sr y Ti 1--x--y )-oxide, wherein 1--x--y is in the range 0.65-0.90, with both x and y greater than or equal to 0.05.
Claim 4
Dependent Claim
29 words
An article according to claim 1, wherein the article is an integrated circuit chip comprising a transistor that is electrically connected to one of said first and second electrodes.
References Cited (Backward Citations)
US5635420A
Cited
US5645634A
Cited
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