US5777350A
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Nitride semiconductor light-emitting device
Assignee: Nichia Corp
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Filing: 1995-11-30
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Granted: 1998-07-07
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Expires: 2015-11-30
Abstract
Abstract A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
Inventors
- 👤 Shuji Nakamura
- 👤 Shinichi Nagahama
- 👤 Naruhito Iwasa
- 👤 Hiroyuki Kiyoku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:01
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; B; B82; B82Y; B82Y20/00; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
108 words
A nitride semiconductor light-emitting device comprising: an active layer of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, and provided in contact with said second main surface of the active layer; a second p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, having a larger band gap than that of said first p-type clad layer, and provided on said first p-type clad layer; and an n-type semiconductor layer provided in contact with said first main surface of the active layer.
Claim 2
Dependent Claim
108 words
A nitride semiconductor light-emitting device comprising: an active layer of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, and provided in contact with said second main surface of the active layer; a second p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, having a larger band gap than that of said first p-type clad layer, and provided on said first p-type clad layer; and an n-type semiconductor layer provided in contact with said first main surface of the active layer.
Claim 3
Dependent Claim
25 words
The device according to claim 1, wherein said first p-type clad layer has a thickness with in a range of 10 angstroms to 1.0 μm.
Claim 4
Dependent Claim
128 words
A nitride semiconductor light-emitting device comprising: an active layer comprising of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer made of an n-type nitride semiconductor containing aluminum and gallium or of an n-type GaN, and provided in contact with said first main surface of the active layer, said first n-type clad layer having a thickness within a range of 10 angstroms to 1.0 μm; a second n-type clad layer comprising an n-type nitride semiconductor having a larger band gap than that of said first n-type clad layer, and provided on said first n-type clad layer; and a p-type semiconductor layer provided in contact with said second main surface of the active layer.
Claim 5
Dependent Claim
128 words
A nitride semiconductor light-emitting device comprising: an active layer comprising of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer made of an n-type nitride semiconductor containing aluminum and gallium or of an n-type GaN, and provided in contact with said first main surface of the active layer, said first n-type clad layer having a thickness within a range of 10 angstroms to 1.0 μm; a second n-type clad layer comprising an n-type nitride semiconductor having a larger band gap than that of said first n-type clad layer, and provided on said first n-type clad layer; and a p-type semiconductor layer provided in contact with said second main surface of the active layer.
Claim 6
Dependent Claim
24 words
The device according to claim 3, wherein said first n-type clad layer has a thickness within a range of 100 angstroms to 1.0 μm.
Claim 7
Dependent Claim
156 words
A nitride semiconductor light-emitting device comprising: an active layer of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer made of an n-type nitride semiconductor containing aluminum and gallium, or of an n-type GaN, and provided in contact with said first main surface of the active layer; a second n-type clad layer comprising an n-type nitride semiconductor having a larger band gap than that of said first n-type clad layer, and provided on said first n-type clad layer; a first p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, and provided in contact with said second main surface of the active layer; and a second p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, having a larger band gap than that of said first p-type clad layer, and provided on said first p-type clad layer.
Claim 8
Dependent Claim
156 words
A nitride semiconductor light-emitting device comprising: an active layer of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer made of an n-type nitride semiconductor containing aluminum and gallium, or of an n-type GaN, and provided in contact with said first main surface of the active layer; a second n-type clad layer comprising an n-type nitride semiconductor having a larger band gap than that of said first n-type clad layer, and provided on said first n-type clad layer; a first p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, and provided in contact with said second main surface of the active layer; and a second p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, having a larger band gap than that of said first p-type clad layer, and provided on said first p-type clad layer.
Claim 9
Dependent Claim
24 words
The device according to claim 5, wherein said first p-type clad layer has a thickness within a range of 10 angstroms to 1.0 μm.
Claim 10
Dependent Claim
24 words
The device according to claim 5, wherein said first n-type clad layer has a thickness within a range of 10 angstroms to 1.0 μm.
Claim 11
Dependent Claim
96 words
A nitride semiconductor light-emitting device comprising: an active layer comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer comprising an n-type nitride semiconductor not containing aluminum, and provided in contact with said first main surface of the active layer; and a p-type clad layer comprising a p-type nitride semiconductor and having a surface region, at least said surface region comprising a p-type nitride semiconductor containing aluminum and gallium, said p-type clad layer being provided in contact with said second main surface of the active layer.
Claim 12
Dependent Claim
96 words
A nitride semiconductor light-emitting device comprising: an active layer comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first n-type clad layer comprising an n-type nitride semiconductor not containing aluminum, and provided in contact with said first main surface of the active layer; and a p-type clad layer comprising a p-type nitride semiconductor and having a surface region, at least said surface region comprising a p-type nitride semiconductor containing aluminum and gallium, said p-type clad layer being provided in contact with said second main surface of the active layer.
Claim 13
Dependent Claim
16 words
The device according to claim 8, wherein said active layer is of a quantum well structure.
Claim 14
Dependent Claim
24 words
The device according to claim 9, wherein said active layer is provided with a well layer comprising In x Ga 1-x N where 0<x<1.
Claim 15
Dependent Claim
39 words
The device according to claim 10, wherein said active layer comprises a combination of a well layer comprising In x Ga 1-x N where 0<x<1 with a barrier layer comprising In x Ga 1-x N where 0<x'<1, and x=x'.
Claim 16
Dependent Claim
25 words
The device according to claim 8, wherein a total thickness of said active layer and said first n-type clad layer is 300 angstroms or more.
Claim 17
Dependent Claim
34 words
The device according to claim 8, wherein a total thickness of said active layer, said first n-type clad layer and said first p-type layer of said p-type clad layer is 300 angstroms or more.
Claim 18
Dependent Claim
32 words
The device according to claim 8, further comprising a second n-type clad layer comprising an n-type nitride semiconductor containing aluminum and gallium, and provided in contact with said first n-type clad layer.
Claim 19
Dependent Claim
27 words
The device according to claim 14, further comprising an n-type contact layer formed of an n-type GaN and provided in contact with said second n-type clad layer.
Claim 20
Dependent Claim
27 words
The device according to claim 8, further comprising an n-type contact layer formed of an n-type GaN and provided in contact with said first n-type clad layer.
Claim 21
Dependent Claim
26 words
The device according to claim 8, further comprising a p-type contact layer formed of a p-type GaN and provided in contact with said p-type clad layer.
Claim 22
Dependent Claim
39 words
The device according to claim 8, further comprising, as a light reflecting film, a first multi-layered film comprising at least two nitride semiconductor layers differing in composition, and provided on an outer side of said first n-type clad layer.
Claim 23
Dependent Claim
26 words
The device according to claim 18, further comprising an n-type contact layer formed of an n-type GaN and provided in contact with said first multi-layered film.
Claim 24
Dependent Claim
38 words
The device according to claim 8, further comprising, as a light reflecting film, a second multi-layered film comprising at least two nitride semiconductor layers differing in composition and provided on an outer side of said p-type clad layer.
Claim 25
Dependent Claim
26 words
The device according to claim 20, further comprising a p-type contact layer formed of a p-type GaN and provided in contact with said second multi-layered film.
References Cited (Backward Citations)
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