Gallium nitride-based III-V group compound semiconductor

Claim 1

A gallium nitride-based III-V Group compound semiconductor device, comprising: a substrate having first and second major surfaces; a first semiconductor layer provided on the side of the first major surface of said substrate and comprising an n-type gallium nitride-based III-V Group compound semiconductor, said first semiconductor layer having a planar top shape with four corners; a second semiconductor layer provided on the side of said first major surface of said substrate and comprising a p-type gallium nitride-based III-V Group compound semiconductor, said second semiconductor layer having a planar top shape with four corners in which one corner portion thereof is cut away; a first electrode layer provided on a portion of said first semiconductor layer corresponding to said cut-away corner portion of said second semiconductor layer; a light-transmitting, second electrode layer provided substantially over an entire surface of said second semiconductor layer; and a wire bonding pad layer provided at one corner portion of said second electrode layer and electrically connected to said second electrode layer; wherein said first electrode layer is arranged at a position farthest from said bonding pad.