US5281830A
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Light-emitting semiconductor device using gallium nitride group compound
Assignee: Nagoya University
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Filing: 1991-10-24
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Granted: 1994-01-25
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Expires: 2011-10-24
Abstract
Abstract There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x<1) comprises an n-layer; a p-layer which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, the p-layer joining to the n-layer; a first electrode for the n-layer so as to join to the n-layer, passing through a hole formed in the p-layer which extends from the p-layer to the n-layer; and a second electrode for the p-layer which is formed in a region which is separated by a groove formed in the p-layer so as to extend from the upper surface of the p-layer to said n-layer. An LED comprises an n-layer; an i-layer doped with p-type impurities, the i-layer joining to the n-layer; a first electrode for said n-layer so as to join to the n-layer, passing through a hole formed in the i-layer which extends from the upper surface of the i-layer to the n-layer; a p-type part in a specific region in the i-layer which is converted into p-type conduction by irradiating with electron rays, the p-type part being formed such that said first electrode is insulated and separated by the i-layer; and a second electrode for said p-type part.
Inventors
- 👤 Masahiro Kotaki
- 👤 Isamu Akasaki
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/8312; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/832
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
161 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); a p-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits the p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer joining to said n-layer; a first electrode for said n-layer which is formed on an upper surface of said p-layer so as to join to said n-layer, passing through a hole formed in said p-layer which extends from said upper surface of said p-layer to said n-layer; and a second electrode for said p-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said p-layer and being separated from said first electrode by a groove formed in said p-layer so as to extend from said upper surface of said p-layer to said n-layer.
Claim 2
Dependent Claim
161 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); a p-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits the p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer joining to said n-layer; a first electrode for said n-layer which is formed on an upper surface of said p-layer so as to join to said n-layer, passing through a hole formed in said p-layer which extends from said upper surface of said p-layer to said n-layer; and a second electrode for said p-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said p-layer and being separated from said first electrode by a groove formed in said p-layer so as to extend from said upper surface of said p-layer to said n-layer.
Claim 3
Dependent Claim
262 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; an n + -layer of high carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is high and which is doped with n-type impurities, formed on said buffer layer; an n-layer of low carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is low and is not doped with n-type impurities, formed on said n + -layer; a p-layer of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits p-type conduction and is doped with p-type impurities and irradiated with electron rays, said p-layer joined to said n-layer; a first electrode, for said n + -layer, which is formed on an upper surface of said p-layer and passes through a first groove formed in said p-layer, said groove extending from said upper surface of said p-layer to said n + -layer, so as to join said first electrode to said n + -layer; and a second electrode for said p-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said p-layer and being separated from said first electrode by a second groove formed in said p-layer, said second groove extending from said upper surface of said p-layer to said n + -layer.
Claim 4
Dependent Claim
262 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; an n + -layer of high carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is high and which is doped with n-type impurities, formed on said buffer layer; an n-layer of low carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is low and is not doped with n-type impurities, formed on said n + -layer; a p-layer of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits p-type conduction and is doped with p-type impurities and irradiated with electron rays, said p-layer joined to said n-layer; a first electrode, for said n + -layer, which is formed on an upper surface of said p-layer and passes through a first groove formed in said p-layer, said groove extending from said upper surface of said p-layer to said n + -layer, so as to join said first electrode to said n + -layer; and a second electrode for said p-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said p-layer and being separated from said first electrode by a second groove formed in said p-layer, said second groove extending from said upper surface of said p-layer to said n + -layer.
Claim 5
Dependent Claim
35 words
A light-emitting device according to claim 2, wherein irradiation with electron rays is carried out at an acceleration voltage of 1 kV to 50 kV and a sample current of 0.1 μA to 1 mA.
Claim 6
Dependent Claim
258 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; an n + -layer of high carrier concentration of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is high and which is doped with n-type impurities, formed on said buffer layer; an n-layer of low carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is low and is not doped with n-type impurities, formed on said n + -layer; an i-layer, formed of a semi-insulator or of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1), doped with p-type impurities, said i-layer joined to said n-layer; a first electrode for said n + -layer which is formed on an upper surface of said i-layer and passes through a first groove formed in said i-layer, said first groove extending from said upper surface of said i-layer to said n + -layer, so as to join said first electrode to said n + -layer; a p-type part in a specific region in said i-layer which has been converted into p-type conduction by irradiation with electron rays, said p-type part being formed such that said first electrode is insulated and separated from said p-type part by said i-layer; and a second electrode for said p-type part which is formed on an upper surface of said p-type part.
Claim 7
Dependent Claim
258 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; an n + -layer of high carrier concentration of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is high and which is doped with n-type impurities, formed on said buffer layer; an n-layer of low carrier concentration, formed of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) in which an electron density is low and is not doped with n-type impurities, formed on said n + -layer; an i-layer, formed of a semi-insulator or of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1), doped with p-type impurities, said i-layer joined to said n-layer; a first electrode for said n + -layer which is formed on an upper surface of said i-layer and passes through a first groove formed in said i-layer, said first groove extending from said upper surface of said i-layer to said n + -layer, so as to join said first electrode to said n + -layer; a p-type part in a specific region in said i-layer which has been converted into p-type conduction by irradiation with electron rays, said p-type part being formed such that said first electrode is insulated and separated from said p-type part by said i-layer; and a second electrode for said p-type part which is formed on an upper surface of said p-type part.
Claim 8
Dependent Claim
192 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; a p-layer of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer being formed on said buffer layer; an n-layer of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1), said n-layer being formed on said p-layer; a first electrode for said p-layer which is formed on an upper surface of said n-layer which passes through a first groove formed in said n-layer, said first groove extending from said upper surface of said n-layer to said p-layer so as to join to said p-layer; and a second electrode for said n-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said n-layer and being separated from said first electrode by a second groove formed in said n-layer, said second groove extending from said upper surface of said n-layer to said p-layer.
Claim 9
Dependent Claim
192 words
A light-emitting semiconductor device using a gallium nitride group compound comprising: a sapphire substrate; a buffer layer of aluminum nitride (AlN) formed on said sapphire substrate; a p-layer of a gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer being formed on said buffer layer; an n-layer of an n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1), said n-layer being formed on said p-layer; a first electrode for said p-layer which is formed on an upper surface of said n-layer which passes through a first groove formed in said n-layer, said first groove extending from said upper surface of said n-layer to said p-layer so as to join to said p-layer; and a second electrode for said n-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said n-layer and being separated from said first electrode by a second groove formed in said n-layer, said second groove extending from said upper surface of said n-layer to said p-layer.
Claim 10
Dependent Claim
69 words
A light-emitting device according to claim 5, wherein said n-layer is of a double-layer structure composed of an n-layer of low carrier concentration in which the electron density is low and an n + -layer of high carrier concentration in which the electron density is high, with the former layer joining to said p-layer, and said second electrode is formed on said n + -layer of high carrier concentration.
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