EP0483688A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Light emitting semiconductor device using gallium nitride group compound
Assignee: Nagoya University
•
Filing: 1991-10-25
•
Granted: —
•
Expires: 2011-10-25
Abstract
Abstract There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x<1) comprises an n-layer; a p-layer which exhibits p-type conduction upon doping with p-type impurities and irradiation with electron rays, the p-layer joining to the n-layer; a first electrode for the n-layer so as to join to the n-layer, passing through a hole formed in the p-layer which extends from the p-layer to the n-layer; and a second electrode for the p-layer which is formed in a region which is separated by a groove formed in the p-layer so as to extend from the upper surface of the p-layer to said n-layer. An LED comprises an n-layer; an i-layer doped with p-type impurities, the i-layer joining to the n-layer; a first electrode for said n-layer so as to join to the n-layer, passing through a hole formed in the i-layer which extends from the upper surface of the i-layer to the n-layer; a p-type part in a specific region in the i-layer which is converted into p-type conduction by irradiating with electron rays, the p-type part being formed such that said first electrode is insulated and separated by the i-layer; and a second electrode for said p-type part.
Inventors
- 👤 Masahiro c/o Toyoda Gosei Co. Ltd. Kotaki
- 👤 Isamu Akasaki
- 👤 Hiroshi Amano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 22:16
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/8312; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/832
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
63 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); and a p-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits the p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer joining to said n-layer.
Claim 2
Dependent Claim
74 words
A process for producing a light-emitting semiconductor device using gallium nitride group compound comprising the steps of: forming an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); forming an i-layer of semi-insulator of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) doped with p-type impurities; and converting said i-layer into a p-layer which exhibits p-type conduction by irradiating said i-layer with electron rays.
Claim 3
Dependent Claim
161 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); a p-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits the p-type conduction upon doping with p-type impurities and irradiation with electron rays, said p-layer joining to said n-layer; a first electrode for said n-layer which is formed on an upper surface of said p-layer so as to join to said n-layer, passing through a hole formed in said p-layer which extends from said upper surface of said p-layer to said n-layer; and a second electrode for said p-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said p-layer and being separated from said first electrode by a groove formed in said p-layer so as to extend from said upper surface of said p-layer to said n-layer.
Claim 4
Dependent Claim
177 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); a p-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) which exhibits the p-type conduction upon doping with p-type impurities and irradiation with electron rays; an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1), said n-layer joining to said p-layer; a first electrode for said p-layer which is formed on an upper surface of said n-layer so as to join to said p-layer, passing through a hole formed in said n-layer which extends from said upper surface of said n-layer to said p-layer; and a second electrode for said n-layer which is formed in a region opposite to said first electrode, said region being on said upper surface of said n-layer and being separated from said first electrode by a groove formed in said n-layer so as to extend from said upper surface of said n-layer to said p-layer.
Claim 5
Dependent Claim
153 words
A process for producing a light-emitting semiconductor device using gallium nitride group compound comprising the steps of: forming an i-layer of semi-insulator of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) doped with p-type impurities on an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); converting said i-layer into a p-layer which exhibits p-type conduction by irradiating said i-layer with electron rays; forming in said p-layer a hole extending from an upper surface of said p-layer to said n-layer in which an electrode for said n-layer is to be formed and also forming in said p-layer a groove which separates said hole; forming on said p-layer surrounding said hole an electrode for said n-layer which passes through said hole to join to said n-layer; and forming on said upper surface of said p-layer separated by said groove an electrode for said p-layer.
Claim 6
Dependent Claim
150 words
A process for producing a light-emitting semiconductor device using gallium nitride group compound comprising: forming an i-layer semi-insulator of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x<1) doped with p-type impurities; converting said i-layer into a p-layer which exhibits p-type conduction by irradiating said i-layer with electron rays; forming on said p-layer an n-layer of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); forming in said n-layer a hole extending from an upper surface of said n-layer to said p-layer in which an electrode for said p-layer is to be formed and also forming in said n-layer a groove which separates said hole; forming on said n-layer surrounding said hole an electrode for said p-layer which passes through said hole to join to said p-layer; and forming on said upper surface of said n-layer separated by said groove an electrode for said n-layer.
Claim 7
Dependent Claim
158 words
A light-emitting semiconductor device using gallium nitride group compound comprising: an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1); an i-layer of semi-insulator or of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) doped with p-type impurities, said i-layer joining to said n-layer; a first electrode for said n-layer which is formed on an upper surface of said i-layer so as to join to said n-layer, passing through a hole formed in said i-layer which extends from said upper surface of said i-layer to said n-layer; a p-type part in a specific region in said i-layer which is converted into p-type conduction by irradiation with electron rays, said p-type part being formed such that said first electrode is insulated and separated from said p-type part by said i-layer; and a second electrode for said p-type part which is formed on an upper surface of said p-type part.
Claim 8
Dependent Claim
160 words
A process for producing a light-emitting semiconductor device using gallium nitride group compound comprising: forming an i-layer of semi-insulator of gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) doped with p-type impurities on an n-layer of n-type gallium nitride group compound semiconductor (Al x Ga 1-x N, where 0≦x<1) ; forming in said i-layer a hole extending from an upper surface of said i-layer to said n-layer in which an electrode for said n-layer is to be formed; forming a p-type part in a specific region in said i-layer which is converted into p-type conduction by irradiating with electron rays, said p-type part being formed such that said hole is separated from said p-type part by said i-layer; forming on said i-layer surrounding said hole an electrode for said n-layer which passes through said hole to join to said n-layer; and forming on an upper surface of said p-type part an electrode for said p-type part.
Claim 9
Dependent Claim
63 words
A light-emitting device according to Claim 3, wherein said n-layer is of double-layer structure composed of an n-layer of low carrier concentration in which the electron density is low and an n⁺-layer of high carrier concentration in which the electron density is high, with the former layer joining to said p-layer, and said first electrode joins to said n⁺-layer of high carrier concentration.
Claim 10
Dependent Claim
64 words
A light-emitting device according to Claim 4, wherein said n-layer is of double-layer structure composed of an n-layer of low carrier concentration in which the electron density is low and an n⁺-layer of high carrier concentration in which the electron density is high, with the former layer joining to said p-layer, and said second electrode is formed on said n⁺-layer of high carrier concentration.
Claim 11
Dependent Claim
64 words
A light-emitting device according to Claim 7, wherein said n-layer is of double-layer structure composed of an n-layer of low carrier concentration in which the electron density is low and an n⁺-layer of high carrier concentration in which the electron density is high, with the former layer joining to said p-layer, and said first electrode joins to said n⁺ -layer of high carrier concentration.
Claim 12
Dependent Claim
36 words
A light-emitting device according to Claim 9, which further comprises a sapphire substrate and a buffer layer of aluminum nitride (AlN) formed thereon, with said n⁺-layer of high carrier concentration being formed on said buffer layer.
Claim 13
Dependent Claim
36 words
A light-emitting device according to Claim 11, which further comprises a sapphire substrate and a buffer layer of aluminum nitride (AlN) formed thereon, with said n⁺-layer of high carrier concentration being formed on said buffer layer.
Claim 14
Dependent Claim
35 words
A light-emitting device according to Claim 1, wherein irradiation with electron rays is carried out at an acceleration voltage of 1 kV to 50 kV and a sample current of 0.1 µA to 1 mA.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.