US5285078A
Expired / Lapsed
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Light emitting element with employment of porous silicon and optical device utilizing light emitting element
Assignee: Nippon Steel Corp
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Filing: 1993-01-22
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Granted: 1994-02-08
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Expires: 2013-01-22
Abstract
Abstract A carrier injection type light emitting element with employment of a pn junction established between porous silicon and a semiconductor having a conductivity type different from that of the porous silicon, and also optical devices such as an opto-optical converting element, a light transmitting element, a photocoupling circuit element, a photocoupling element and a display apparatus, which comprise such a carrier injection type light emitting element and a semiconductor light receiving element.
Inventors
- 👤 Hidenori Mimura
- 👤 Toshiro Futagi
- 👤 Takahiro Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:23
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; H10F; H10F55/00; H10F55/10; H10F55/15; H10F55/155; H10F55/20; H10F55/25; H10F55/255; H10H20/817; H10H20/818
Claims Analysis
Total Claims: 53
Claim 1
Independent Claim
29 words
A charge injection type light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 2
Dependent Claim
29 words
A charge injection type light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 3
Dependent Claim
36 words
A charge injection type light emitting element as claimed in claim 1, wherein at least a portion of hydrogen adhered to surfaces of a plurality of holes in said porous silicon, is substituted by heavy hydrogen.
Claim 4
Dependent Claim
24 words
A charge injection type light emitting element as claimed in claim 1, wherein said porous silicon is formed on a single crystal silicon substrate.
Claim 5
Dependent Claim
27 words
A charge injection type light emitting element as claimed in claim 1, wherein a band gap of said semiconductor is higher than, or equal to 2.0 eV.
Claim 6
Dependent Claim
24 words
A charge injection type light emitting element as claimed in claim 1, wherein said semiconductor is an amorphous silicon carbide film containing microcrystal (μC-SiC).
Claim 7
Dependent Claim
21 words
A charge injection type light emitting element as claimed in claim 1, wherein said semiconductor is an amorphous silicon carbide (a-SiC).
Claim 8
Dependent Claim
19 words
A charge injection type light emitting element as claimed in claim 1, wherein said semiconductor is poly crystal diamond.
Claim 9
Dependent Claim
21 words
A charge injection type light emitting element as claimed in claim 1, wherein said semiconductor is poly crystal silicon carbide (SiC).
Claim 10
Dependent Claim
19 words
A charge injection type light emitting element as claimed in claim 1, wherein said semiconductor is an organic semiconductor.
Claim 11
Dependent Claim
74 words
A charge injection type light emitting element as claimed in claim 1, wherein an epitaxial layer is formed on single crystal silicon whose resistivity is 0.0001 to 40 Ωcm, a conductivity type of said epitaxial layer being the same conductivity type as that of said single crystal silicon and resistivity of said epitaxial layer being higher than that of said single crystal silicon, and also said pn junction is formed on said epitaxial layer.
Claim 12
Dependent Claim
37 words
A charge injection type light emitting element as claimed in claim 1, wherein said porous silicon is light-annealed by irradiating light with energy higher than the band gap of said porous silicon formed by an electrochemical anodization.
Claim 13
Dependent Claim
26 words
A charge injection type light emitting element as claimed in claimed 1, wherein said porous silicon is fabricated by way of electrochemical anodization and thermally annealed.
Claim 14
Dependent Claim
17 words
A light emitting element characterized by sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 15
Dependent Claim
17 words
A light emitting element characterized by sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 16
Dependent Claim
33 words
A light emitting element as claimed in claim 13, wherein at least a portion of hydrogen adhered to surfaces of a plurality of holes in said porous silicon, is substituted by heavy hydrogen.
Claim 17
Dependent Claim
30 words
A light emitting element as claimed in claim 13, wherein one semiconductor is single crystal silicon, and the other semiconductor is an amorphous silicon carbide film containing micro crystal (μC-SiC).
Claim 18
Dependent Claim
17 words
A light emitting element as claimed in claim 13, wherein said semiconductor is amorphous silicon carbide (a-SiC).
Claim 19
Dependent Claim
28 words
A light emitting element as claimed in claim 13, wherein band gaps of said p-type semiconductor and said n-type semiconductor are higher than, or equal to 2.2 eV.
Claim 20
Dependent Claim
26 words
A light emitting element as claimed in claim 13, wherein both said p-type semiconductor and said n-type semiconductor are amorphous silicon carbide containing micro crystal (μC-SiC).
Claim 21
Dependent Claim
23 words
A light emitting element as claimed in claim 13, wherein both said p-type semiconductor and said n-type semiconductor are amorphous silicon carbide (a-SiC).
Claim 22
Dependent Claim
64 words
A photocoupling element including a light emitting element, a light receiving element, and optical transmission means for transmitting optical information transmitted by said light emitting element to said light receiving element on a substrate in a monolithic state, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 23
Dependent Claim
64 words
A photocoupling element including a light emitting element, a light receiving element, and optical transmission means for transmitting optical information transmitted by said light emitting element to said light receiving element on a substrate in a monolithic state, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 24
Dependent Claim
55 words
A photocoupling element comprising: a light emitting element, a light receiving element, optical transmission means for transmitting optical information transmitted by said light emitting element to said light receiving element, which are formed on a substrate in a monolithic state, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 25
Dependent Claim
55 words
A photocoupling element comprising: a light emitting element, a light receiving element, optical transmission means for transmitting optical information transmitted by said light emitting element to said light receiving element, which are formed on a substrate in a monolithic state, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 26
Dependent Claim
60 words
A photocoupling circuit element comprising: a light emitting element made in junction with a light receiving element in such a manner that said light emitting element is positioned opposite to said light receiving element, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 27
Dependent Claim
60 words
A photocoupling circuit element comprising: a light emitting element made in junction with a light receiving element in such a manner that said light emitting element is positioned opposite to said light receiving element, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 28
Dependent Claim
49 words
A photocoupling circuit element comprising: a light emitting element made in junction with a light receiving element in such a manner that said light emitting element is positioned opposite to said light receiving element, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 29
Dependent Claim
49 words
A photocoupling circuit element comprising: a light emitting element made in junction with a light receiving element in such a manner that said light emitting element is positioned opposite to said light receiving element, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 30
Dependent Claim
74 words
A light transmission element comprising: a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 31
Dependent Claim
74 words
A light transmission element comprising: a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 32
Dependent Claim
63 words
A light transmission element comprising: a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 33
Dependent Claim
63 words
A light transmission element comprising: a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 34
Dependent Claim
79 words
A light transmission element comprising of a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate in a monolithic state, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 35
Dependent Claim
79 words
A light transmission element comprising of a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate in a monolithic state, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 36
Dependent Claim
68 words
A light transmission element comprising of a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate in a monolithic state, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 37
Dependent Claim
68 words
A light transmission element comprising of a light emitting element and a switching modulation element for modulating an optical signal transmitted from said light emitting element in response to an input electric signal, said light emitting element and said modulation element being fabricated on a single crystal silicon substrate in a monolithic state, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 38
Dependent Claim
45 words
An opto-optical converting element comprising: a light emitting element and a light receiving element integrated in a vertical direction, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 39
Dependent Claim
45 words
An opto-optical converting element comprising: a light emitting element and a light receiving element integrated in a vertical direction, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 40
Dependent Claim
34 words
An opto-optical converting element comprising: a light emitting element and a light receiving element integrated in a vertical direction, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 41
Dependent Claim
34 words
An opto-optical converting element comprising: a light emitting element and a light receiving element integrated in a vertical direction, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 42
Dependent Claim
23 words
An opto-optical converting element as claimed in claim 28, wherein said light receiving element is a photodiode fabricated by employing single crystal silicon.
Claim 43
Dependent Claim
23 words
An opto-optical converting element as claimed in claim 29, wherein said light receiving element is a photodiode fabricated by employing single crystal silicon.
Claim 44
Dependent Claim
23 words
An opto-optical converting element as claimed in claim 28, wherein said light receiving element is a phototransistor formed by employing single crystal silicon.
Claim 45
Dependent Claim
23 words
An opto-optical converting element as claimed in claim 29, wherein said light receiving element is a phototransistor formed by employing single crystal silicon.
Claim 46
Dependent Claim
66 words
A display device comprising one picture element arranged by a light emitting element and a switch element for selecting the light emitting element, said light emitting element and said switch element being formed on the same single crystal silicon substrate, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 47
Dependent Claim
66 words
A display device comprising one picture element arranged by a light emitting element and a switch element for selecting the light emitting element, said light emitting element and said switch element being formed on the same single crystal silicon substrate, said light emitting element comprising: a pn junction constructed of porous silicon and a semiconductor having a conductivity type different from that of said porous silicon.
Claim 48
Dependent Claim
55 words
A display device comprising: one picture element arranged by a light emitting element and a switch element for selecting the light emitting element, said light emitting element and said switch element being formed on the same single crystal silicon substrate, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 49
Dependent Claim
55 words
A display device comprising: one picture element arranged by a light emitting element and a switch element for selecting the light emitting element, said light emitting element and said switch element being formed on the same single crystal silicon substrate, said light emitting element sandwiching porous silicon with a p-type semiconductor and an n-type semiconductor.
Claim 50
Dependent Claim
34 words
A display apparatus as claimed in claim 34, wherein both a drive circuit for driving said display device and said display device are formed on said single crystal silicon substrate in a monolithic state.
Claim 51
Dependent Claim
34 words
A display apparatus as claimed in claim 35, wherein both a drive circuit for driving said display device and said display device are formed on said single crystal silicon substrate in a monolithic state.
Claim 52
Dependent Claim
92 words
An optical apparatus comprising: a semiconductor substrate; a porous silicon layer formed on said substrate, having a first conductivity type; a light emitting element containing a semiconductor layer having a second conductivity type different from said first conductivity type, and functioning as a light emitting element for emitting a light output in response to an input electric signal and for forming a pn junction with said porous silicon layer; and a semiconductor element formed on said substrate and operationally coupled to one of said input electric signal and an optical output signal.
Claim 53
Dependent Claim
92 words
An optical apparatus comprising: a semiconductor substrate; a porous silicon layer formed on said substrate, having a first conductivity type; a light emitting element containing a semiconductor layer having a second conductivity type different from said first conductivity type, and functioning as a light emitting element for emitting a light output in response to an input electric signal and for forming a pn junction with said porous silicon layer; and a semiconductor element formed on said substrate and operationally coupled to one of said input electric signal and an optical output signal.
References Cited (Backward Citations)
JPS6247171A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |