US5140651A
Expired / Lapsed
US
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Semiconductive guided-wave programmable optical delay lines using electrooptic fabry-perot elements
Assignee: United States Department of the Air Force
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Filing: 1991-06-27
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Granted: 1992-08-18
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Expires: 2011-06-27
Abstract
Abstract Electrically controlled Fabry-Perot resonator elements are created in a semiconductor channel waveguide by etching two in-channel mirror facets (slots) and by positioning the resulting resonator core in the midregion of a P-I-N diode or field-effect transistor. A large number of FPs can be built monolithically on one semiconductor chip, with FPs connected by on-chip passive waveguides used for multiple on-chip time delays. The low-loss chips are coupled efficiently in end-fire fashion to a group of optical fibers that comprise the optical signal processing system. III-V quantum-well, superlattice, and n-i-p-i materials are preferred for the semiconductor devices, and a variety of electrooptical effects are available for use, including the quantum-confined Stark effect, phase-space absorption quenching, Wannier-Stark effect, plasma dispersion effect, and band-flattening.
Inventors
- 👤 Richard A. Soref
- 👤 Henry F. Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:22
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/21; G02F1/225; G02F1/2257; B; B82; B82Y; B82Y20/00; G02B; G02B6/00; G02B6/24; G02B6/26; G02B6/28; G02B6/2804; G02B6/2861; G02B6/30; G02B6/305; G02F1/015; G02F1/017; G02F1/01708; G02F1/213; G02F2201/00; G02F2201/20
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
73 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements therein, said etalon elements each including a semiconductor resonator core; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light impinging upon said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 2
Dependent Claim
73 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements therein, said etalon elements each including a semiconductor resonator core; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light impinging upon said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 3
Dependent Claim
20 words
The electrooptic device of claim 1 wherein said semiconductor resonator core is positioned in the mid-region of a p-i-n diode.
Claim 4
Dependent Claim
23 words
The electrooptic device of claim 1 wherein said semiconductor resonator core is located in the gate region of an electrooptic field effect transistor.
Claim 5
Dependent Claim
16 words
The electrooptic device of claim 3 wherein said resonator core includes multiple quantum wells or superlattices.
Claim 6
Dependent Claim
16 words
The electrooptic device of claim 1 wherein said resonator core includes multiple quantum wells or superlattices.
Claim 7
Dependent Claim
19 words
The electrooptic device of claim 1 wherein said etalon elements are tandemly positioned within said light pulse delay line.
Claim 8
Dependent Claim
90 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements therein, said etalon elements each including a semiconductor resonator core having two in-channel parallel reflective end facets for providing light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 9
Dependent Claim
90 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements therein, said etalon elements each including a semiconductor resonator core having two in-channel parallel reflective end facets for providing light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 10
Dependent Claim
20 words
The electrooptic device of claim 7 wherein said semiconductor resonator core is positioned in the mid-region of a p-i-n diode.
Claim 11
Dependent Claim
23 words
The electrooptic device of claim 7 wherein said semiconductor resonator core is located in the gate region of an electrooptic field effect transistor.
Claim 12
Dependent Claim
17 words
The electrooptic device of claim 9 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 13
Dependent Claim
17 words
The electrooptic device of claim 7 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 14
Dependent Claim
19 words
The electrooptic device of claim 11 wherein said etalon elements are tandemly positioned within said light pulse delay line.
Claim 15
Dependent Claim
19 words
The electrooptic device of claim 7 wherein said etalon elements are tandemly positioned within said light pulse delay line
Claim 16
Dependent Claim
152 words
A variable delay electrooptic device comprising: (a) a first stage including a light pulse delay line having a plurality of Fabry-Perot semiconductor resonator etalon elements tandemly positioned therein, said etalon elements each including a rib-like semiconductor resonator core having two in-channel parallel reflective end facets for providing a light reflectivity of between ten and thirty percent; (b) electrical biasing means for selectively biasing said resonator etalon elements to a first light transmissive state or to a second light reflective state whereby light passing through said etalon element is reflected backwardly; (c) an input/output light pulse port means for inputting light pulses into said variable delay electrooptic device and for outputting light therefrom; and (d) a second stage including a plurality of variable length waveguide segments, and electro-optic switching for coupling one waveguide segment of said plurality of variable length waveguide segments between said input/output light pulse port means and said first stage.
Claim 17
Dependent Claim
152 words
A variable delay electrooptic device comprising: (a) a first stage including a light pulse delay line having a plurality of Fabry-Perot semiconductor resonator etalon elements tandemly positioned therein, said etalon elements each including a rib-like semiconductor resonator core having two in-channel parallel reflective end facets for providing a light reflectivity of between ten and thirty percent; (b) electrical biasing means for selectively biasing said resonator etalon elements to a first light transmissive state or to a second light reflective state whereby light passing through said etalon element is reflected backwardly; (c) an input/output light pulse port means for inputting light pulses into said variable delay electrooptic device and for outputting light therefrom; and (d) a second stage including a plurality of variable length waveguide segments, and electro-optic switching for coupling one waveguide segment of said plurality of variable length waveguide segments between said input/output light pulse port means and said first stage.
Claim 18
Dependent Claim
103 words
A variable delay electrooptic device comprising: (a) a first stage including a light pulse delay line having a plurality of tandemly positioned Fabry-Perot resonator etalon elements each having a semiconductor resonator core; (b) electrical biasing means for selectively biasing each semiconductor core to a first light transmissive state or to a second light reflective state for causing light passing through only one selected etalon element to be reflected backwardly; and (c) a second stage including a plurality of variable length waveguide segments and switching means for coupling only one waveguide segment of said plurality of variable length waveguide segments to said first stage.
Claim 19
Dependent Claim
103 words
A variable delay electrooptic device comprising: (a) a first stage including a light pulse delay line having a plurality of tandemly positioned Fabry-Perot resonator etalon elements each having a semiconductor resonator core; (b) electrical biasing means for selectively biasing each semiconductor core to a first light transmissive state or to a second light reflective state for causing light passing through only one selected etalon element to be reflected backwardly; and (c) a second stage including a plurality of variable length waveguide segments and switching means for coupling only one waveguide segment of said plurality of variable length waveguide segments to said first stage.
Claim 20
Dependent Claim
20 words
The electrooptic device of claim 15 wherein said semiconductor resonator core is positioned in the mid-region of a p-i-n diode.
Claim 21
Dependent Claim
16 words
The electrooptic device of claim 16 wherein said resonator core includes multiple quantum wells or superlattices.
Claim 22
Dependent Claim
23 words
The electrooptic device of claim 15 wherein said semiconductor resonator core is located in the gate region of an electrooptic field effect transistor.
Claim 23
Dependent Claim
17 words
The electrooptic device of claim 15 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 24
Dependent Claim
112 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having an upper cladding and a plurality of Fabry-Perot resonator etalon elements tandemly positioned therein, said etalon elements each including a rib-like semiconductor resonator core having two in-channel parallel end cuts on opposite sides of said resonator core, and extending through said upper cladding and core, for providing a light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 25
Dependent Claim
112 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having an upper cladding and a plurality of Fabry-Perot resonator etalon elements tandemly positioned therein, said etalon elements each including a rib-like semiconductor resonator core having two in-channel parallel end cuts on opposite sides of said resonator core, and extending through said upper cladding and core, for providing a light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 26
Dependent Claim
20 words
The electrooptic device of claim 20 wherein said semiconductor resonator core is positioned in the mid-region of a p-i-n diode.
Claim 27
Dependent Claim
23 words
The electrooptic device of claim 20 wherein said semiconductor resonator core is located in the gate region of an electrooptic field effect transistor.
Claim 28
Dependent Claim
17 words
The electrooptic device of claim 22 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 29
Dependent Claim
17 words
The electrooptic device of claim 20 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 30
Dependent Claim
51 words
The electrooptic device of claim 20 including an input/output light pulse port means for inputting light pulses into said variable time delay electrooptic device and for outputting light therefrom, said port means including at least one fiber-optic cable interfacing portion coupled to said semiconductor resonator core via a tapered waveguide section.
Claim 31
Dependent Claim
92 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements tandemly positioned therein, said etalon elements each including a semiconductor resonator core having two in-channel parallel reflective end facets for providing light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 32
Dependent Claim
92 words
A variable time delay electrooptic device comprising: (a) a light pulse waveguide delay line having a plurality of Fabry-Perot resonator etalon elements tandemly positioned therein, said etalon elements each including a semiconductor resonator core having two in-channel parallel reflective end facets for providing light reflectivity of between ten and thirty percent; and (b) electrical biasing means for selectively biasing said etalon elements to a first light transmissive state or to a second light reflective state where light passing through said etalon element is reflected backwardly, thereby to establish a given time delay.
Claim 33
Dependent Claim
20 words
The electrooptic device of claim 26 wherein said waveguide delay line is coiled into an elongated spiral having large-radius bends.
Claim 34
Dependent Claim
20 words
The electrooptic device of claim 27 wherein said semiconductor resonator core is positioned in the mid-region of a p-i-n diode.
Claim 35
Dependent Claim
23 words
The electrooptic device of claim 27 wherein said semiconductor resonator core is located in the gate region of an electrooptic field effect transistor.
Claim 36
Dependent Claim
17 words
The electrooptic device of claim 27 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
Claim 37
Dependent Claim
17 words
The electrooptic device of claim 26 wherein said semiconductor resonator core includes multiple quantum wells or superlattices.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-18 | 1996-02-17 | 1996-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-18 | 2000-02-17 | 2000-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-18 | 2004-02-17 | 2004-08-18 | $7700.00 | Window Closed / Lapsed |