Dual channel fabry-perot laser

Claim 2

A semiconductor diode laser comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, a first active waveguide defined in said active layer, a second active waveguide defined in said active layer, electrode means connected to said layers for applying said pumping current, a coupling region defined in said active layer between said first and second active waveguides so that said waveguides are optically coupled, and means for providing feedback for radiation emitted in said first or second active waveguides so that laser oscillations may be supported therein, said means providing a feedback path including a portion of said first active waveguide, said coupling region and a portion of said second active waveguide.

Claim 3

The laser of claim 1 wherein said first and second active waveguides extend between first and second parallel spaced apart partially reflecting end facets of a semiconductor body, said first active waveguide being terminated at said first facet with a high-reflection coating and at said second facet with an anti-reflection coating, said second active waveguide being terminated at said first facet with an anti-reflection coating and at said second facet with a high-reflection coating.

Claim 4

The laser of claim 1 wherein said coupling region comprises a distributed periodic structure, and wherein said first and second active waveguides have different propagation constants and said first and second active waveguides are optically coupled by said distributed periodic structure, whereby said laser can be directly modulated to produce a modulated optical output signal.

Claim 5

The laser diode of claim 1 wherein said first and second active waveguides are single mode waveguides.

Claim 6

A high power double-heterostructure semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including first and second cladding layers of opposite conductivity type, and an active layer located between said cladding layers, said active layer being capable of the stimulated emission of radiation when a pumping current is supplied thereto, means for defining first and second optically coupled parallel waveguide regions in said active layer for laterally guiding said radiation, means connected to said layers for receiving said pumping current, and first and second parallel spaced apart partially reflecting end facets, said waveguide regions extending between said end facets, said first waveguide region being terminated at said first end facet with a high-reflection coating and at said second end facet with an anti-reflection coating, said second waveguide region being terminated at said first end facet with an anti-reflection coating and at said second end facet with a high-reflection coating, said radiation being emitted from said laser diode through at least one of said anti-reflection coatings.

Claim 7

A high power double-heterostructure semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including first and second cladding layers of opposite conductivity type, and an active layer located between said cladding layers, said active layer being capable of the stimulated emission of radiation when a pumping current is supplied thereto, means for defining first and second optically coupled parallel waveguide regions in said active layer for laterally guiding said radiation, means connected to said layers for receiving said pumping current, and first and second parallel spaced apart partially reflecting end facets, said waveguide regions extending between said end facets, said first waveguide region being terminated at said first end facet with a high-reflection coating and at said second end facet with an anti-reflection coating, said second waveguide region being terminated at said first end facet with an anti-reflection coating and at said second end facet with a high-reflection coating, said radiation being emitted from said laser diode through at least one of said anti-reflection coatings.

Claim 8

The laser of claim 5 wherein said means defining said waveguide regions includes a pair of spaced apart ridges formed in one of said cladding layers and extending between said end facets.

Claim 9

A double heterostructure semiconductor laser diode which can be directly modulated with a relatively small FM to AM ratio comprising a substrate, a plurality of layers fabricated on said substrate, said layers including first and second cladding layers of opposite conductivity type, and an active layer located between said cladding layers, said active layer being capable of the stimulated emission of radiation when a pumping current is supplied thereto, means for defining first and second non-identical parallel waveguide regions in said active layer for laterally guiding said radiation, electrode means for receiving said pumping current, a periodic structure for optically coupling said first and second waveguide regions, and first and second parallel spaced apart partially reflecting end facets, said first and second waveguide regions extending between said end facets, said first waveguide region being terminated at said first end facet with a high-reflection coating and at said second end facet with an anti-reflection coating, said second waveguide regin being terminated at said first end facet with an anti-reflection coating and at said second end facet with a high-reflection coating, said laser being capable of supporting laser oscillations only in a narrow bandwidth centered about a frequency which is relatively insensitive to changes in pumping current.

Claim 10

A double heterostructure semiconductor laser diode which can be directly modulated with a relatively small FM to AM ratio comprising a substrate, a plurality of layers fabricated on said substrate, said layers including first and second cladding layers of opposite conductivity type, and an active layer located between said cladding layers, said active layer being capable of the stimulated emission of radiation when a pumping current is supplied thereto, means for defining first and second non-identical parallel waveguide regions in said active layer for laterally guiding said radiation, electrode means for receiving said pumping current, a periodic structure for optically coupling said first and second waveguide regions, and first and second parallel spaced apart partially reflecting end facets, said first and second waveguide regions extending between said end facets, said first waveguide region being terminated at said first end facet with a high-reflection coating and at said second end facet with an anti-reflection coating, said second waveguide regin being terminated at said first end facet with an anti-reflection coating and at said second end facet with a high-reflection coating, said laser being capable of supporting laser oscillations only in a narrow bandwidth centered about a frequency which is relatively insensitive to changes in pumping current.

Claim 11

The laser of claim 7 wherein said waveguide defining means comprises first and second ridges formed in one of said cladding layers and extending between said end facets, said first and second ridges having different widths.

Claim 12

A semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of producing radiation when a pumping current is supplied thereto, first and second geometrically non-identical spaced apart parallel active waveguides defined in said active layer, means for receiving said pumping current, a coupling region defined in said active layer between said first and second active waveguides and including a periodic coupling structure therein, means defining a feedback path for radiation in said first and second active waveguides comprising a portion of said first active waveguide, said coupling region, and a portion of said second active waveguide, said feedback path restricting the oscillation frequency of said laser diode to a narrow band centered about a frequency which is substantially insensitive to changes in pumping current so that said laser is capable of being modulated with a relatively small FM to AM ratio.

Claim 13

A semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of producing radiation when a pumping current is supplied thereto, first and second geometrically non-identical spaced apart parallel active waveguides defined in said active layer, means for receiving said pumping current, a coupling region defined in said active layer between said first and second active waveguides and including a periodic coupling structure therein, means defining a feedback path for radiation in said first and second active waveguides comprising a portion of said first active waveguide, said coupling region, and a portion of said second active waveguide, said feedback path restricting the oscillation frequency of said laser diode to a narrow band centered about a frequency which is substantially insensitive to changes in pumping current so that said laser is capable of being modulated with a relatively small FM to AM ratio.

Claim 14

A semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is supplied thereto, electrode means associated with said active layer for receiving said pumping current, first and second parallel spaced apart partially reflecting end facets, and first and second coupled active waveguides extending between said end facets, said first active waveguide being terminated at said first end facet with an anti-reflection coating, and at said second end facet with a high-reflection coating, and said second active waveguide being terminated at said first end facet with a high-reflection coating and at said second end facet an anti-reflection coating to define a feedback path extending from said high-reflection coating on said first end facet, to said high-reflection coating on said second end facet, so that no standing waves are set up in said active waveguides near said anti-reflection coatings, radiation being emitted through at least one of said anti-reflection coatings.

Claim 15

A semiconductor laser diode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is supplied thereto, electrode means associated with said active layer for receiving said pumping current, first and second parallel spaced apart partially reflecting end facets, and first and second coupled active waveguides extending between said end facets, said first active waveguide being terminated at said first end facet with an anti-reflection coating, and at said second end facet with a high-reflection coating, and said second active waveguide being terminated at said first end facet with a high-reflection coating and at said second end facet an anti-reflection coating to define a feedback path extending from said high-reflection coating on said first end facet, to said high-reflection coating on said second end facet, so that no standing waves are set up in said active waveguides near said anti-reflection coatings, radiation being emitted through at least one of said anti-reflection coatings.