US5674366A
Expired / Lapsed
US
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Method and apparatus for fabrication of dielectric thin film
Assignee: Panasonic Holdings Corp
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Filing: 1995-06-07
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Granted: 1997-10-07
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Expires: 2015-06-07
Abstract
Abstract A method whereby perovskite type oxide dielectric thin films with ABO 3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O 3 ), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
Inventors
- 👤 Shigenori Hayashi
- 👤 Kazuki Komaki
- 👤 Takeshi Kamada
- 👤 Masatoshi Kitagawa
- 👤 Takashi Deguchi
- 👤 Ryoichi Takayama
- 👤 Takashi Hirao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:18
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/58; C23C14/5846; C23C14/5853; C23C14/0021; C23C14/0036; C23C14/0073; C23C14/0078; C23C14/06; C23C14/08; C23C14/088; H; H10; H10N; H10N15/00; H10N15/10; H10N15/15; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/076; H10N30/80; H10N30/85; H10N30/853; H10N30/8548; G; G02; G02F; G02F1/00; G02F1/0009; G02F1/0018; G02F1/0027; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
125 words
An apparatus for fabrication of dielectric thin films formed of ABO 3 perovskite type composite compounds, which are composed of the site A comprising at least one element from lead, barium, strontium and lanthanum, the site B comprising at least one element from titanium and zirconium, and oxygen, the apparatus comprising: means for maintaining a substrate at a temperature at which perovskite type crystalline thin films are obtainable; means for depositing thin films on a plurality of substrates using at least one multi-component material sputter target; and means for stabilizing the crystal grains of said thin films, wherein said depositing and said stabilizing functions are repetitively performed by periodically alternating the deposition of the thin films and stabilization of the thin films on said substrates.
Claim 2
Independent Claim
125 words
An apparatus for fabrication of dielectric thin films formed of ABO 3 perovskite type composite compounds, which are composed of the site A comprising at least one element from lead, barium, strontium and lanthanum, the site B comprising at least one element from titanium and zirconium, and oxygen, the apparatus comprising: means for maintaining a substrate at a temperature at which perovskite type crystalline thin films are obtainable; means for depositing thin films on a plurality of substrates using at least one multi-component material sputter target; and means for stabilizing the crystal grains of said thin films, wherein said depositing and said stabilizing functions are repetitively performed by periodically alternating the deposition of the thin films and stabilization of the thin films on said substrates.
Claim 3
Dependent Claim
65 words
The apparatus for fabrication of dielectric thin films according to claim 1, wherein the means for depositing thin films comprises a sputtering device, and further comprising: means for passing each substrate over the targets periodically, and also means for controlling said means for depositing thin films on each said substrate, wherein said means for stabilizing the crystal grains of said thin films is repeated periodically.
Claim 4
Dependent Claim
50 words
The apparatus for fabrication of dielectric thin films according to claim 1 or claim 2, wherein said stabilizing means includes a means for providing each substrate with a plasma during non-deposition to react with raw material elements composing the thin films to stabilize the crystal grains of said thin films.
Claim 5
Dependent Claim
60 words
The apparatus for fabrication of dielectric thin films according to claim 1 or claim 2, wherein said stabilizing means includes a means for providing the deposited thin film surface with active oxygen during non-deposition to cause an oxidation reaction thereto in a gaseous atmosphere comprising at least ozone (O 3 ) to stabilize the crystal grains of said thin films.
Claim 6
Dependent Claim
45 words
The apparatus for fabrication of dielectric thin films according to claim 1 or claim 2, wherein said stabilizing means includes a means for irradiating short wave length light on the deposited thin film surface during non-deposition to stabilize the crystal grains of said thin films.
Claim 7
Independent Claim
138 words
An apparatus for fabricating dielectric thin films formed of ABO 3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising: a heater suitable for maintaining a substrate at a temperature at which perovskite type crystalline thin films are obtained; means for depositing thin films on a plurality of substrates using a plurality of multi-component material sputter targets of a same composition; and means for stabilizing the crystal grains of said thin films, wherein said depositing and said stabilizing functions are repetitively performed by periodically alternating the deposition of the thin films and stabilization of the thin films on said substrates.
Claim 8
Independent Claim
138 words
An apparatus for fabricating dielectric thin films formed of ABO 3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising: a heater suitable for maintaining a substrate at a temperature at which perovskite type crystalline thin films are obtained; means for depositing thin films on a plurality of substrates using a plurality of multi-component material sputter targets of a same composition; and means for stabilizing the crystal grains of said thin films, wherein said depositing and said stabilizing functions are repetitively performed by periodically alternating the deposition of the thin films and stabilization of the thin films on said substrates.
Claim 9
Dependent Claim
41 words
The apparatus for fabricating dielectric thin films according to claim 6, wherein said stabilizing means stabilizes the crystal grains formed by said depositing means by depositing additional films at a deposition speed lower than the deposition speed of said depositing means.
Claim 10
Dependent Claim
65 words
The apparatus for fabricating dielectric thin films according to claim 6, wherein said depositing means comprises a sputterer, and further comprising: a passer for passing each substrate over the targets periodically, wherein said depositing means is disposed to perform the thin film deposition on the substrates and said stabilizing means is disposed to perform the stabilization of the crystal grains in a sequential repetitive cycle.
Claim 11
Dependent Claim
49 words
The apparatus for fabricating dielectric thin films according to claim 6 or claim 8, wherein said stabilizing means includes a plasma excitator having a gas to cause an oxidation reaction during stabilization with raw material elements composing the thin films to stabilize the crystal grains of said thin films.
Claim 12
Dependent Claim
60 words
The apparatus for fabricating dielectric thin films according to claim 6 or claim 8, wherein said stabilizing means includes an ozone treater to apply active oxygen during stabilization to the deposited thin film surface and cause an oxidation reaction thereto in a gaseous atmosphere comprising at least ozone (O 3 ) to stabilize the crystal grains of said thin films.
Claim 13
Dependent Claim
45 words
The apparatus for fabricating dielectric thin films according to claim 6 or claim 8, wherein said stabilizing means includes a light irradiator for irradiating short wave length light on the deposited thin film surface during stabilization to stabilize the crystal grains of said thin films.
Claim 14
Dependent Claim
153 words
A sputtering apparatus for fabricating dielectric thin films formed on ABO 3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising: at least one ferroelectric material sputter target for depositing thin films on a substrate; a rotative substrate holder on which a plurality of substrates are disposed; a heater for maintaining a substrate temperature within a range from about 550° C. to about 650° C.; and a slitting plate having a hole therein, said slitting plate disposed between said sputter target and said rotative substrate holder for repetitively and periodically alternating the deposition of the thin films and stabilization of said thin films on said substrates to stabilize the crystal grains of said thin films.
Claim 15
Dependent Claim
153 words
A sputtering apparatus for fabricating dielectric thin films formed on ABO 3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising: at least one ferroelectric material sputter target for depositing thin films on a substrate; a rotative substrate holder on which a plurality of substrates are disposed; a heater for maintaining a substrate temperature within a range from about 550° C. to about 650° C.; and a slitting plate having a hole therein, said slitting plate disposed between said sputter target and said rotative substrate holder for repetitively and periodically alternating the deposition of the thin films and stabilization of said thin films on said substrates to stabilize the crystal grains of said thin films.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-06 | 2001-04-07 | 2001-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-06 | 2005-04-07 | 2005-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-06 | 2009-04-07 | 2009-10-07 | $7700.00 | Window Closed / Lapsed |