US5155658A
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Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
Assignee: University of Maryland, College Park
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Filing: 1992-03-05
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Granted: 1992-10-13
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Expires: 2012-03-05
Abstract
Abstract A ferroelectric memory and its method of making in which a highly c-axis oriented layer (56) of ferroelectric lead zirconate titanate (PZT) is epitaxially deposited at between 640 DEG and 710 DEG C. upon a crystalline film (54) of yttrium barium copper oxide (YBCO), acting both as growth template and bottom electrode. A top electrode (58) is formed over the ferroelectric layer to complete the memory element. The two electrodes are preferably composed of the same perovskite conductor of the same cyrstalline orientation, most preferably, a-axis oriented YBCO. The structure can be grown on a silicon substrate (50) with an intermediate buffer layer (52) of yttria-stabilized zirconia. The ferroelectric behavior is optimized if the structure is cooled from its growth temperature at about 20 DEG C./min. Such a-axis oriented perovskite thin films can be grown by continuously depositing the same or different perovskite material, but dividing the deposition into three temperature stages, a first at a temperature favoring a-axis oriented growth, a second gradually increasing the temperature to a temperature favoring c-axis growth, and a third at the c-axis growth temperature. Nonetheless, a high-quality a-axis oriented film is grown. The memory can be rejuvenated after it has become fatigued by applying a pulse of magnitude equal to that of the writing pulse but of considerably longer duration.
Inventors
- 👤 Arun Inam
- 👤 Ramamoorthy Ramesh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:12
CPC Classifications
H; H10; H10B; H10B53/00; C; C04; C04B; C04B35/00; C04B35/01; C04B35/48; C04B35/49; C04B35/491; H01; H01G; H01G7/00; H01G7/06; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6502; H10P14/6506; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
53 words
A ferroelectric memory element, comprising: a singly crystalline body comprising a metal oxide chosen from the group consisting of cuprate oxide and bismuthal oxide, having a perovskite crystal structure, and being conductive; a ferroelectric layer epitaxially formed on said crystalline body, wherein at least 80% of said ferroelectric layer has a c-axis orientation.
Claim 2
Dependent Claim
53 words
A ferroelectric memory element, comprising: a singly crystalline body comprising a metal oxide chosen from the group consisting of cuprate oxide and bismuthal oxide, having a perovskite crystal structure, and being conductive; a ferroelectric layer epitaxially formed on said crystalline body, wherein at least 80% of said ferroelectric layer has a c-axis orientation.
Claim 3
Dependent Claim
21 words
A ferroelectric memory element as recited in claim 1, wherein at least 90% of said ferroelectric layer has said c-axis orientation.
Claim 4
Dependent Claim
17 words
A ferroelectric memory element as recited in claim 1, wherein said body comprises a first thin film.
Claim 5
Dependent Claim
18 words
A ferroelectric memory element as recited in claim 3, wherein said first thin film is substantially c-axis oriented.
Claim 6
Dependent Claim
18 words
A ferroelectric memory element as recited in claim 3, wherein said first thin film is substantially a-axis oriented.
Claim 7
Dependent Claim
42 words
A ferroelectric memory element as recited in claim 3 further comprising a second thin film formed over said ferroelectric layer having a substantially same crystalline orientation as said first thin film and wherein said first and second thin films comprise respective electrodes.
Claim 8
Dependent Claim
15 words
A ferroelectric memory element as recited in claim 3, wherein said metal oxide comprises YBaCuO.
Claim 9
Dependent Claim
15 words
A ferroelectric memory element as recited in claim 3, wherein said ferroelectric layer comprises PbZrTiO.
Claim 10
Independent Claim
96 words
A method of forming a ferroelectric thin film, comprising the steps of: a first step of depositing a ferroelectric layer comprising a ferroelectric material upon a singly crystalline body held at a deposition temperature at which said ferroelectric material is stable in a cubic phase; and cooling said deposited layer through a transition temperature of said ferroelectric material lower than said deposition temperature and producing a transition in said ferroelectric material from said cubic phase to a non-cubic phase, said cooling being performed at a cooling rate lying within a range between 10° to 40° C./min.
Claim 11
Independent Claim
96 words
A method of forming a ferroelectric thin film, comprising the steps of: a first step of depositing a ferroelectric layer comprising a ferroelectric material upon a singly crystalline body held at a deposition temperature at which said ferroelectric material is stable in a cubic phase; and cooling said deposited layer through a transition temperature of said ferroelectric material lower than said deposition temperature and producing a transition in said ferroelectric material from said cubic phase to a non-cubic phase, said cooling being performed at a cooling rate lying within a range between 10° to 40° C./min.
Claim 12
Dependent Claim
20 words
A method as recited in claim 9, wherein said cooling rates lies within a range between 15° and 30° C./min.
Claim 13
Dependent Claim
54 words
A method as recited in claim 9, wherein said singly crystalline body comprises a thin film of a metal oxide chosen from the group consisting of cuprate oxide and bismuthal oxide, having a perovskite crystal structure, and being conductive and further comprising the step of depositing said thin film on a singly crystalline substrate.
Claim 14
Dependent Claim
13 words
A method as recited in claim 11, wherein said metal oxide comprises YBaCuO.
Claim 15
Dependent Claim
13 words
A method as recited in claim 12, wherein said ferroelectric material comprises PbZrTiO.
Claim 16
Dependent Claim
15 words
A method as recited in claim 13, wherein said transition temperature equals about 470° C.
Claim 17
Dependent Claim
27 words
A method as recited in claim 9, wherein said cooling step causes at least 80% of said layer of said ferroelectric material to have a c-axis orientation.
Claim 18
Dependent Claim
63 words
A method as recited in claim 9, wherein: said singly crystalline body comprises a first perovskite layer; said first depositing step includes a second step of depositing said first perovskite layer as an a,b-axis oriented film upon a second singly crystalline body; and further comprising a third step of depositing a second perovskite layer as an a,b-axis oriented film upon said ferroelectric layer.
Claim 19
Dependent Claim
57 words
A method as recited in claim 16, wherein said third depositing step includes depositing said second perovskite layer while a deposition temperature is gradually raised from a first temperature favoring a,b-axis oriented growth to a second temperature favoring c-axis oriented growth and then holding said deposition temperature at said second temperature while said second depositing step continues.
Claim 20
Independent Claim
92 words
A method of writing and rejuvenating a ferroelectric memory, comprising: a first step of applying a voltage pulse of a first magnitude and a first duration to a ferroelectric memory comprising a singly crystalline ferroelectric material and a pair of electrodes to thereby write a datum in said memory; and a second step of applying a voltage pulse of a magnitude approximately equal to said first magnitude and of a second duration very much larger than said first duration to said ferroelectric memory to thereby rejuvenate said memory for said first step.
Claim 21
Independent Claim
92 words
A method of writing and rejuvenating a ferroelectric memory, comprising: a first step of applying a voltage pulse of a first magnitude and a first duration to a ferroelectric memory comprising a singly crystalline ferroelectric material and a pair of electrodes to thereby write a datum in said memory; and a second step of applying a voltage pulse of a magnitude approximately equal to said first magnitude and of a second duration very much larger than said first duration to said ferroelectric memory to thereby rejuvenate said memory for said first step.
Claim 22
Dependent Claim
23 words
A method as recited in claim 18, wherein each of said electrodes comprises a similarly oriented perovskite thin film of a same material.
Claim 23
Independent Claim
99 words
A method of growing an oriented perovskite thin film, comprising the steps of: depositing a perovskite thin film upon a crystalline substrate; during said depositing step gradually changing deposition conditions from first growth conditions favoring formation of an a,b-axis oriented film to second growth conditions favoring formation of a c-axis oriented film, thereby forming a first portion of said thin film; after completion of said changing step, without interruption continuing said depositing step at said second growth conditions to form a second portion of said thin film, whereby said second portion is formed as an a,b-axis oriented thin film.
Claim 24
Independent Claim
99 words
A method of growing an oriented perovskite thin film, comprising the steps of: depositing a perovskite thin film upon a crystalline substrate; during said depositing step gradually changing deposition conditions from first growth conditions favoring formation of an a,b-axis oriented film to second growth conditions favoring formation of a c-axis oriented film, thereby forming a first portion of said thin film; after completion of said changing step, without interruption continuing said depositing step at said second growth conditions to form a second portion of said thin film, whereby said second portion is formed as an a,b-axis oriented thin film.
Claim 25
Dependent Claim
25 words
A method as recited in claim 20, wherein said each of said first and second portions of said thin film comprises a common superconductive material.
Claim 26
Dependent Claim
27 words
A method as recited in claim 20, wherein said second growth conditions include a deposition temperature higher than a deposition temperature included in said first growth conditions.
Claim 27
Dependent Claim
30 words
A method as recited in claim 22, wherein said changing step changes said deposition temperature while said depositing step is depositing a plurality of unit cells of said thin film.
Claim 28
Dependent Claim
28 words
A method as recited in claim 20, wherein said depositing step deposits said thin film upon a ferroelectric layer at least 80% of which has a c-axis orientation.
References Cited (Backward Citations)
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