Ferroelectric memory with diode isolation

Claim 2

An improved memory comprising: (a) a first row control line and a second row control line; (b) a first column control line and a second column control line; (c) a ferroelectric capacitor having a first terminal and a second terminal, wherein: (i) said first terminal is connected to the first row control line via a first diode having its cathode coupled to the first terminal; (ii) said first terminal is connected to the second row control line via a second diode having its anode coupled to the first terminal; (iii) said second terminal is coupled to the second column control line via a third diode having its anode coupled to the second terminal; and (iv) said second terminal is coupled to the first column control line via a fourth diode having its cathode coupled to the second terminal.

Claim 3

The improved memory of claim 1, wherein said memory is fabricated on a semiconductor substrate.

Claim 4

The improved memory of claim 1 further comprising: (a) a column driver comprising: (i) a first transistor connecting the first column control line to ground in response to a first column control signal having a first value; (ii) a resistor connecting the first column control line to a power supply; and (iii) a second transistor connecting the second column control line to ground in response to a second column control signal having a first value; and (b) a row driver comprising: (i) a resistor connecting the first row control line to the power supply; (ii) a third transistor for connecting the first row control line to ground in response to a first row control signal having a first value; (iii) a fourth transistor for coupling the second row control line to ground in response to a second row control signal having a first value.

Claim 5

The improved memory cell in claim 3 further comprising logic means for producing the row and column control signals to: (a) polarize the ferroelectric capacitor to a first state, when: (i) the first column control signal does not have the first value; and (ii) the second row control signal has the first value; and (b) polarize the ferroelectric capacitor to a second state, when: (i) the first row control signal does not have the first value; and (ii) the second column control signal has the first value.

Claim 6

The improved memory of claim 1, wherein the memory is fabricated on a semiconductor substrate.

Claim 7

The improved memory of claim 4 further comprising means for measuring the current flow in the second row control line.

Claim 8

An improved memory comprising: (a) a first plurality of cells, each of such cells having a first terminal and a second terminal and comprising ferroelectric material coupled between the first and second terminals, the ferroelectric material having a coercive threshold voltage; (b) a second plurality of cells, each of such cells having a first terminal and a second terminal and comprising ferroelectric material coupled between the first and second terminals, the ferroelectric material having a coercive threshold voltage; (c) means for applying a voltage exceeding the coercive threshold across a selected one of the plurality of cells while applying substantially no voltage across all of the others of the plurality of cells, said means comprising: (i) means for switchably coupling one circuit node to a reference voltage and for switchably coupling a second circuit node to a voltage positive with respect to the reference voltage; (ii) a first plurality of diodes, each diode coupling the first terminal of a respective one of the first plurality of cells to the first circuit node; (iii) a second plurality of diodes, each diode coupling the first terminal of a respective one of the first plurality of cells to the second circuit node; (iv) means for switchably coupling a third circuit node to the reference voltage and for switchably coupling a fourth circuit node to a voltage positive with respect to the reference voltage; (v) a third plurality of diodes, each coupling a respective one of the second terminals of the second plurality of cells to the third circuit node; and (vi) a fourth plurality of diodes, each coupling a respective one of the second terminals of the second plurality of cells to the fourth circuit node.

Claim 9

An improved memory comprising: (a) a first plurality of cells, each of such cells having a first terminal and a second terminal and comprising ferroelectric material coupled between the first and second terminals, the ferroelectric material having a coercive threshold voltage; (b) a second plurality of cells, each of such cells having a first terminal and a second terminal and comprising ferroelectric material coupled between the first and second terminals, the ferroelectric material having a coercive threshold voltage; (c) means for applying a voltage exceeding the coercive threshold across a selected one of the plurality of cells while applying substantially no voltage across all of the others of the plurality of cells, said means comprising: (i) means for switchably coupling one circuit node to a reference voltage and for switchably coupling a second circuit node to a voltage positive with respect to the reference voltage; (ii) a first plurality of diodes, each diode coupling the first terminal of a respective one of the first plurality of cells to the first circuit node; (iii) a second plurality of diodes, each diode coupling the first terminal of a respective one of the first plurality of cells to the second circuit node; (iv) means for switchably coupling a third circuit node to the reference voltage and for switchably coupling a fourth circuit node to a voltage positive with respect to the reference voltage; (v) a third plurality of diodes, each coupling a respective one of the second terminals of the second plurality of cells to the third circuit node; and (vi) a fourth plurality of diodes, each coupling a respective one of the second terminals of the second plurality of cells to the fourth circuit node.

Claim 10

The improved memory of claim 7 wherein each of the means for switchably coupling includes a transistor.

Claim 11

The improved memory of claim 7 wherein each diode has a first terminal and a second terminal, one of such terminals being an anode and one of such terminals being a cathode, and the first terminal of each of the diodes in the first plurality of diodes is coupled to the first terminal of a corresponding cell and the second terminal of each of the diodes in the second plurality of diodes is coupled to the first terminal of a corresponding cell.

Claim 12

The improved memory of claim 9 wherein the second plurality of cells contains only one cell also in the first plurality of cells.

Claim 13

The improved memory of claim 10 wherein each of the means for switchably coupling comprises a transistor.