US5514904A
Expired / Lapsed
US
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Semiconductor device with monocrystalline gate insulating film
Assignee: Toshiba Corp
•
Filing: 1994-08-26
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Granted: 1996-05-07
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Expires: 2014-08-26
Abstract
Abstract A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of β-cristobalite having a unit structure in a P4 1 2 1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the β-cristobalite and the 110! direction is set perpendicular to the (100) plane.
Inventors
- 👤 Shinji Onga
- 👤 Takako Okada
- 👤 Kouichirou Inoue
- 👤 Yoshiaki Matsushita
- 👤 Kikuo Yamabe
- 👤 Hiroaki Hazama
- 👤 Haruo Okano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:18
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
94 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that a difference between an Si--Si distance of Si atoms in said monocrystalline silicon substrate and an Si--Si difference of Si atoms in said insulating film present at positions corresponding to the Si atoms in the substrate falls within a range of ±7%.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that a difference between an Si--Si distance of Si atoms in said monocrystalline silicon substrate and an Si--Si difference of Si atoms in said insulating film present at positions corresponding to the Si atoms in the substrate falls within a range of ±7%.
Claim 3
Dependent Claim
68 words
A device according to claim 1, wherein the crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that the difference between the Si--Si distance of the Si atoms in said monocrystalline silicon substrate and the Si--Si difference of the Si atoms in said insulating film present at the positions corresponding to the Si atoms in the substrate falls within a range of ±4%.
Claim 4
Dependent Claim
18 words
A device according to claim 1, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 5
Dependent Claim
13 words
A device according to claim 1, wherein said semiconductor device is a capacitor.
Claim 6
Dependent Claim
50 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein an oxygen defect concentration of said insulating film is not more than 0.01%.
Claim 7
Dependent Claim
50 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein an oxygen defect concentration of said insulating film is not more than 0.01%.
Claim 8
Dependent Claim
20 words
A device according to claim 5, wherein the oxygen defect concentration of said insulating film is not more than 0.005%.
Claim 9
Dependent Claim
18 words
A device according to claim 5, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 10
Dependent Claim
13 words
A device according to claim 5, wherein said semiconductor device is a capacitor.
Claim 11
Dependent Claim
46 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon oxide consists essentially of a cristobalite.
Claim 12
Dependent Claim
46 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon oxide consists essentially of a cristobalite.
Claim 13
Dependent Claim
18 words
A device according to claim 9, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 14
Dependent Claim
13 words
A device according to claim 9, wherein said semiconductor device is a capacitor.
Claim 15
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (110), and said insulating film essentially consists of monocrystalline quartz having a plane orientation falling within a range of +6° from a (1,-1,0,1) plane.
Claim 16
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (110), and said insulating film essentially consists of monocrystalline quartz having a plane orientation falling within a range of +6° from a (1,-1,0,1) plane.
Claim 17
Dependent Claim
39 words
A device according to claim 12, wherein said monocrystalline silicon substrate has a plane orientation (110), and said insulating film essentially consists of monocrystalline quartz having a plane orientation falling within a range of ±4° from a (1,-1,0,1) plane.
Claim 18
Dependent Claim
18 words
A device according to claim 12, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 19
Dependent Claim
13 words
A device according to claim 12, wherein said semiconductor device is a capacitor.
Claim 20
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film., wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of ±6° from a (1,-1,0,1) plane.
Claim 21
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film., wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of ±6° from a (1,-1,0,1) plane.
Claim 22
Dependent Claim
41 words
A device according to claim 16, wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film essentially consists of monocrystalline quartz having a plane orientation falling within a range of ±4° from a (1,-1,0,1) or (1,0,-1,0) plane.
Claim 23
Dependent Claim
18 words
A device according to claim 16, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 24
Dependent Claim
13 words
A device according to claim 16, wherein said semiconductor device is a capacitor.
Claim 25
Dependent Claim
119 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a (100) plane orientation, said insulating film essentially consists of β-cristobalite having a unit structure in a P4 1 2 1 2 structural expression in such a manner that every other silicon atom of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of said β-cristobalite and the 110! direction is perpendicular to the (100) plane.
Claim 26
Dependent Claim
119 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a (100) plane orientation, said insulating film essentially consists of β-cristobalite having a unit structure in a P4 1 2 1 2 structural expression in such a manner that every other silicon atom of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of said β-cristobalite and the 110! direction is perpendicular to the (100) plane.
Claim 27
Dependent Claim
64 words
A device according to claim 20, wherein crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that a difference between an Si--Si distance of Si atoms in said monocrystalline silicon substrate and an Si--Si difference of Si atoms in said insulating film present at positions corresponding to the Si atoms in the substrate falls within a range of ±7%.
Claim 28
Dependent Claim
68 words
A device according to claim 21, wherein the crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that the difference between the Si--Si distance of the Si atoms in said monocrystalline silicon substrate and the Si--Si difference of the Si atoms in said insulating film present at the positions corresponding to the Si atoms in the substrate falls within a range of ±4%.
Claim 29
Dependent Claim
20 words
A device according to claim 20, wherein an oxygen defect concentration of said insulating film is not more than 0.01%.
Claim 30
Dependent Claim
20 words
A device according to claim 23, wherein the oxygen defect concentration of said insulating film is not more than 0.005%.
Claim 31
Dependent Claim
18 words
A device according to claim 20, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 32
Dependent Claim
13 words
A device according to claim 20, wherein said semiconductor device is a capacitor.
Claim 33
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of ±6° from a (1,0,-1,0) plane.
Claim 34
Dependent Claim
69 words
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of ±6° from a (1,0,-1,0) plane.
Claim 35
Dependent Claim
39 words
A device according to claim 27, wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of ±4° from a (1,0,-1,0) plane.
Claim 36
Dependent Claim
13 words
A device according to claim 28, wherein said semiconductor device is a capacitor.
Claim 37
Dependent Claim
18 words
A device according to claim 28, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 38
Dependent Claim
18 words
A device according to claim 27, wherein said insulating film comprises a gate insulating film constituting a MOSFET.
Claim 39
Dependent Claim
13 words
A device according to claim 27, wherein said semiconductor device is a capacitor.
References Cited (Backward Citations)
US4642673A
Cited
JPH025480A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-07 | 1999-11-06 | 2000-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-07 | 2003-11-06 | 2004-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-07 | 2007-11-06 | 2008-05-07 | $7700.00 | Window Closed / Lapsed |