Semiconductor element and manufacture thereof

Abstract

Abstract PURPOSE:To suppress an overlapping capacity and to prevent the resistance of source and drain layers from increasing by reducing the lateral size of the end of a gate to the gate as compared with the depthwise size of the position of the end of the gate. CONSTITUTION:A gate oxide film 12 is grown on the surface of a silicon single crystalline substrate 14, a polysilicon film 13 to become a gate electrode is grown thereon, the film 13 and the film 12 are patterned by dry etching, and the surface of the substrate 14 is exposed. Then, it is cooled to the temperature of liquid helium, and with the gate electrode 13 as a mask boron ions are implanted perpendicularly to the surface of the substrate to form source, drain region 11. Thus, since the shape of the source, drain region is smaller in the lateral size from the end of the gate to the gate than the depthwise size of the position of the end of the gate, the resistance of the source, drain is small thereby to prevent an operating speed from deteriorating.

Inventors

• 👤 Masami Hane
• 👤 正巳 羽根

Bibliographic Details