US4642673A
Expired / Lapsed
US
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Floating gate type EEPROM with a substrate region used for the control gate
Assignee: Toshiba Corp
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Filing: 1984-02-22
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Granted: 1987-02-10
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Expires: 2004-02-22
Abstract
Abstract A semiconductor memory device having a floating gate transistor and an insulated gate transistor, is provided a p-type semiconductor substrate, first, second and third semiconductor regions which are formed in the surface area of the substrate, a floating gate electrode capacitively coupled through a first insulating layer to a current path including the first and second semiconductor regions, a control gate electrode capacitively coupled through a second insulating layer to the floating gate electrode, and an insulated gate electrode which is formed through a first insulating layer on that portion of the substrate which lies between the second and third semiconductor regions. The first insulating layer of the semiconductor memory device is formed on that portion of the substrate which lies between the first and second semiconductor regions. The control gate electrode is a fourth semiconductor region which is formed in the surface area of the substrate. A second insulating layer is formed of a very thin monocrystalline oxide layer, and is formed on the fourth semiconductor region. The current path of the floating gate transistor is perpendicular to that of the insulated gate transistor substantially in the same plane.
Inventors
- 👤 Junichi Miyamoto
- 👤 Tetsuya Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:29
CPC Classifications
H; H10; H10B; H10B69/00; H10B41/00; H10B41/40; H10D; H10D30/00; H10D30/60
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
137 words
A floating gate transistor comprising: a semiconductor substrate of a first conductivity type; first and second regions of a second conductivity type respectively formed as source and drain regions in the surface area of said substrate; a third region of the second conductivity type formed as a first control gate electrode in the surface area of said substrate; a first insulating layer formed on that portion of said substrate which lies between said first and second regions; a second insulating layer formed on said third region; a first conductive layer formed as a floating gate electrode on said first and second insulating layers; a third insulating layer formed on said floating gate electrode; and a second conductive layer formed as a second control gate electrode on said third insulating layer and electrically connected to said third region.
Claim 2
Dependent Claim
137 words
A floating gate transistor comprising: a semiconductor substrate of a first conductivity type; first and second regions of a second conductivity type respectively formed as source and drain regions in the surface area of said substrate; a third region of the second conductivity type formed as a first control gate electrode in the surface area of said substrate; a first insulating layer formed on that portion of said substrate which lies between said first and second regions; a second insulating layer formed on said third region; a first conductive layer formed as a floating gate electrode on said first and second insulating layers; a third insulating layer formed on said floating gate electrode; and a second conductive layer formed as a second control gate electrode on said third insulating layer and electrically connected to said third region.
Claim 3
Dependent Claim
32 words
A semiconductor memory device according to claim 1, wherein said semiconductor substrate is formed of a monocrystalline silicon, and said first and second insulating layers are formed of a monocrystalline silicon oxide.
Claim 4
Dependent Claim
31 words
A semiconductor memory device according to claim 2, wherein said first conductive layer is formed of a polycrystalline silicon, and said third insulating layer is formed of a polycrystalline silicon oxide.
Claim 5
Dependent Claim
26 words
A semiconductor memory device according to claim 3, wherein said first and second insulating layers are formed with a thickness of not more than 100 Å.
Claim 6
Dependent Claim
245 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a floating gate transistor including first and second regions of a second conductivity type respectively formed as source and drain regions in the surface area of said substrate, a third region of the second conductivity type formed as a first control gate electrode in the surface area of said substrate, a first insulating layer formed on that portion of said substrate which lies between said first and second regions, a second insulating layer formed on said third region, a first conductive layer formed as a floating gate electrode on said first and second insulating layers, a third insulating layer formed on said floating gate electrode, and a second conductive layer formed as a second control gate electrode on said third insulating layer and electrically connected to said third region; a select transistor including fourth and fifth regions of the second conductivity type formed in the surface area of said substrate, a fourth insulating layer formed on that portion of said substrate which lies between said fourth and fifth regions, and a third conductive layer formed as a select gate electrode on said fourth insulating layer; and means for applying a voltage between said second region and the junction of said second conductive layer and third region through the current path of said select transistor to cause charge carriers to tunnel to and from said floating gate electrode through said first insulating layer.
Claim 7
Dependent Claim
245 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a floating gate transistor including first and second regions of a second conductivity type respectively formed as source and drain regions in the surface area of said substrate, a third region of the second conductivity type formed as a first control gate electrode in the surface area of said substrate, a first insulating layer formed on that portion of said substrate which lies between said first and second regions, a second insulating layer formed on said third region, a first conductive layer formed as a floating gate electrode on said first and second insulating layers, a third insulating layer formed on said floating gate electrode, and a second conductive layer formed as a second control gate electrode on said third insulating layer and electrically connected to said third region; a select transistor including fourth and fifth regions of the second conductivity type formed in the surface area of said substrate, a fourth insulating layer formed on that portion of said substrate which lies between said fourth and fifth regions, and a third conductive layer formed as a select gate electrode on said fourth insulating layer; and means for applying a voltage between said second region and the junction of said second conductive layer and third region through the current path of said select transistor to cause charge carriers to tunnel to and from said floating gate electrode through said first insulating layer.
Claim 8
Dependent Claim
21 words
A semiconductor memory device according to claim 5, wherein said second and fourth regions are formed in contact with each other.
Claim 9
Dependent Claim
32 words
A semiconductor memory device according to claim 5 wherein said semiconductor substrate is formed of a monocrystalline silicon, and said first and second insulating layers are formed of a monocrystalline silicon oxide.
Claim 10
Dependent Claim
31 words
A semiconductor memory device according to claim 7, wherein said first conductive layer is formed of a polycrystalline silicon, and said third insulating layer is formed of a polycrystalline silicon oxide.
Claim 11
Dependent Claim
26 words
A semiconductor memory device according to claim 8, wherein said first and second insulating layers are formed with a thickness of not more than 100 Å.
Claim 12
Dependent Claim
230 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a floating gate transistor including first and second regions of a second conductivity type formed as source and drain regions in the surface area of said substrate, a third region of the second conductivity type formed as a control gate electrode in the surface area of said substrate, a first insulating layer of a first thickness formed on that portion of said substrate which lies between said first and second regions, second and third insulating layers each having a second thickness less than said first thickness and formed on the respective second and third regions, and a first conductive layer formed as a floating gate electrode on said first, second and third insulating layers; a select transistor including fourth and fifth regions of the second conductivity type formed as source and drain regions in the surface area of said substrate, a fourth insulating layer of the first thickness formed on that portion of said substrate which lies between said fourth and fifth regions, and a second conductive layer formed as a select gate electrode on said fourth insulating layer; and means for applying a voltage between said second and third regions through the current path of said select transistor to cause charge carriers to tunnel to and from said floating gate electrode through said second insulating layer.
Claim 13
Dependent Claim
230 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a floating gate transistor including first and second regions of a second conductivity type formed as source and drain regions in the surface area of said substrate, a third region of the second conductivity type formed as a control gate electrode in the surface area of said substrate, a first insulating layer of a first thickness formed on that portion of said substrate which lies between said first and second regions, second and third insulating layers each having a second thickness less than said first thickness and formed on the respective second and third regions, and a first conductive layer formed as a floating gate electrode on said first, second and third insulating layers; a select transistor including fourth and fifth regions of the second conductivity type formed as source and drain regions in the surface area of said substrate, a fourth insulating layer of the first thickness formed on that portion of said substrate which lies between said fourth and fifth regions, and a second conductive layer formed as a select gate electrode on said fourth insulating layer; and means for applying a voltage between said second and third regions through the current path of said select transistor to cause charge carriers to tunnel to and from said floating gate electrode through said second insulating layer.
Claim 14
Dependent Claim
21 words
A semiconductor memory device according to claim 10, wherein said second and fourth regions are formed in contact with each other.
Claim 15
Dependent Claim
32 words
A semiconductor memory device according to claim 10, wherein said semiconductor substrate is formed of a monocrystalline silicon, and said first to fourth insulating layers are formed of a monocrystalline silicon oxide.
Claim 16
Dependent Claim
25 words
A semiconductor memory device according to claim 12, wherein said second and third layer each have the second thickness of not more than 100 Å.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-02-09 | 1990-08-11 | 1991-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-09 | 1994-08-11 | 1995-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-09 | 1998-08-11 | 1999-02-10 | $7700.00 | Window Closed / Lapsed |