US4402064A
Expired / Lapsed
US
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Nonvolatile memory
Assignee: Fujitsu Ltd
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Filing: 1981-11-25
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Granted: 1983-08-30
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Expires: 2001-11-25
Abstract
Abstract A nonvolatile memory, especially an electrically erasable and programmable read only memory (EE-PROM) includes an array of memory cells. In each of the memory cells four transistors are formed, that is a read transistor and a first selecting transistor connected in series, and a write-erase transistor and a second selecting transistor connected in series. The write-erase transistor has a floating gate partially provided with a thin insulation layer thereunder. The read transistor also has a floating gate provided with a thick insulation layer thereunder. The first and second selecting transistors are turned to ON or OFF together.
Inventors
- 👤 Hideki Arakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:27
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0441
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
168 words
A nonvolatile memory comprising: a plurality of memory cells; a plurality of intersecting column lines, row lines and program lines connected to the memory cells, each of the memory cells comprising: a selecting transistor; and a programming transistor connected in series with said selecting transistor, said programming transistor including a control gate and a floating gate, said selecting transistor having a drain connected to one of the column lines, and having a gate connected to one of the row lines, said programming transistor having a control gate connected to one of the program lines, said selecting transistor being divided into first and second selecting transistors, said programming transistor being divided into a read transistor, having a floating gate provided with a relatively thick insulation layer thereunder, and a write-erase transistor having a floating gate provided partially with a relatively thin insulation layer thereunder, said first selecting transistor and said read transistor being connected in series, and the second selecting transistor and said write-erase transistor being connected in series.
Claim 2
Dependent Claim
168 words
A nonvolatile memory comprising: a plurality of memory cells; a plurality of intersecting column lines, row lines and program lines connected to the memory cells, each of the memory cells comprising: a selecting transistor; and a programming transistor connected in series with said selecting transistor, said programming transistor including a control gate and a floating gate, said selecting transistor having a drain connected to one of the column lines, and having a gate connected to one of the row lines, said programming transistor having a control gate connected to one of the program lines, said selecting transistor being divided into first and second selecting transistors, said programming transistor being divided into a read transistor, having a floating gate provided with a relatively thick insulation layer thereunder, and a write-erase transistor having a floating gate provided partially with a relatively thin insulation layer thereunder, said first selecting transistor and said read transistor being connected in series, and the second selecting transistor and said write-erase transistor being connected in series.
Claim 3
Dependent Claim
115 words
A nonvolatile memory as set forth in claim 1, wherein said first and second selecting transistors and said read and write-erase transistors are formed in and on a semiconductor substrate, wherein the semiconductor substrate contains a U-shaped diffusion area therein, wherein said U-shaped diffusion area is electrically connected to said one of the column lines, so as to form drains and sources of said first and second selecting transistors and said read and write-erase transistors, wherein said first selecting transistor and said read transistor are formed on and along one leg of said U-shaped diffusion area, and wherein said second selecting transistor and said write-erase transistor are formed on and along the other leg thereof.
Claim 4
Dependent Claim
47 words
A nonvolatile memory as set forth in claim 2, wherein said first and second selecting transistors are located adjacent to the connecting leg of said U-shaped diffusion area and wherein said read and write-erase transistors are located adjacent to the open end of said U-shaped diffusion area.
Claim 5
Dependent Claim
90 words
A nonvolatile memory as set forth in claim 3, wherein said one of the program lines has a minor part positioned in parallel with said row lines, wherein the gates of said first and second selecting transistors are connected, at respective cross portions, with said one of said row lines which is arranged perpendicular to said one of said column lines, wherein the control gates of said write-erase transistor and said read transistor are connected at respective cross portions to said minor part of said one of said program lines.
Claim 6
Dependent Claim
31 words
A nonvolatile memory as set forth in claim 4, wherein said major part of said one of said program lines is positioned in parallel with said one of said column lines.
Claim 7
Dependent Claim
17 words
A nonvolatile memory as set forth in claim 5, wherein said U-shaped diffusion area has n+-type conductivitiy.
Claim 8
Dependent Claim
26 words
A nonvolatile memory as set forth in claim 6, wherein the channel formed between the drain and the source of said write-erase transistor has n-type conductivity.
Claim 9
Dependent Claim
174 words
A nonvolatile memory comprising: memory cells arranged in a matrix; column lines connected to said memory cells; row lines connected to said memory cells and intersecting said column lines; and program lines connected to said memory cells, each of said memory cells comprising: a first selecting transistor having a drain connected to a corresponding one of the column lines and having a gate connected to a corresponding one of the row lines; a second selecting transistor having a drain connected to the corresponding one of the column lines and having a gate connected to the corresponding one of the row lines; a read transistor connected in series with said first selecting transistor, having a control gate connected to a corresponding one of the program lines and having a floating gate having a relatively thick insulation layer thereunder; and a write-erase transistor connected in series with the second selecting transistor, having a control gate connected to the corresponding one of the program lines and having a floating gate having a relatively thick insulation layer thereunder.
Claim 10
Dependent Claim
174 words
A nonvolatile memory comprising: memory cells arranged in a matrix; column lines connected to said memory cells; row lines connected to said memory cells and intersecting said column lines; and program lines connected to said memory cells, each of said memory cells comprising: a first selecting transistor having a drain connected to a corresponding one of the column lines and having a gate connected to a corresponding one of the row lines; a second selecting transistor having a drain connected to the corresponding one of the column lines and having a gate connected to the corresponding one of the row lines; a read transistor connected in series with said first selecting transistor, having a control gate connected to a corresponding one of the program lines and having a floating gate having a relatively thick insulation layer thereunder; and a write-erase transistor connected in series with the second selecting transistor, having a control gate connected to the corresponding one of the program lines and having a floating gate having a relatively thick insulation layer thereunder.
Claim 11
Dependent Claim
149 words
A nonvolatile memory as set forth in claim 8, wherein said first and second selecting transistors and said read and write-erase transistors are formed in and on a semiconductor substrate, wherein the semiconductor substrate includes a U-shaped diffusion area having first and second legs, each having first and second ends, and a connecting portion with connects said first ends of said first and second legs, wherein said U-shaped diffusion area is electrically connected to the corresponding one of the column lines, wherein said U-shaped diffusion area forms the drains and sources of said first and second selecting transistors and said read and write-erase transistors, wherein said first selecting transistor and said read transistor are formed on and adjacent said first leg of said U-shaped diffusion area, and wherein said second selecting transistor and said write-erase transistor are formed on and adjacent the second leg of said U-shaped diffusion area.
Claim 12
Dependent Claim
49 words
A nonvolatile memory as set forth in claim 9, wherein said first and second selecting transistors are positioned on the first end of said first and second legs, respectively, and wherein said read and write-erase transistors are positioned on the second ends of said first and second legs, respectively.
Claim 13
Dependent Claim
51 words
A nonvolatile memory as set forth in claim 8, further comprising additional program lines connected to said memory cells, wherein each of said memory cells further comprises a third selecting transistor connected to said second selecting transistor and having a gate connected to a corresponding one of the additional program lines.
References Cited (Backward Citations)
US4330850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-29 | 1987-02-28 | 1987-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-29 | 1991-02-28 | 1991-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-29 | 1995-02-28 | 1995-08-30 | $7700.00 | Window Closed / Lapsed |