US5670800A
Expired / Lapsed
US
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Semiconductor device and method for fabricating the same
Assignee: New Energy and Industrial Technology Development Organization
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Filing: 1995-06-14
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Granted: 1997-09-23
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Expires: 2015-06-14
Abstract
Abstract A semiconductor device includes a layer 16 of intermetallic compound layer 16 formed on a base substrate 10. The intermetallic compound is a ternary intermetallic compound 16 mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl . Twice of a lattice constant of the ternary intermetallic compound 16 is substantially equal to a lattice constant of a compound semiconductor forming the base substrate 10. Accordingly, the layer 16 of the intermetallic compound free from misfit dislocations can be formed on the semiconductor substrate or the semiconductor layer, and semiconductor elements can be formed on the wiring layer of the intermetallic compound layer 16.
Inventors
- 👤 Hiroshi Nakao
- 👤 Toshihiko Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:01
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D62/00; H10D62/80; H10D62/82; H10H20/81; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
70 words
A semiconductor device comprising a base substrate and an intermetallic compound layer made of an intermetallic compound formed on the base substrate, the intermetallic compound being a ternary intermetallic compound mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl, twice of a lattice constant of the ternary intermetallic compound being substantially equal to a lattice constant of compound semiconductor forming the base substrate.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising a base substrate and an intermetallic compound layer made of an intermetallic compound formed on the base substrate, the intermetallic compound being a ternary intermetallic compound mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl, twice of a lattice constant of the ternary intermetallic compound being substantially equal to a lattice constant of compound semiconductor forming the base substrate.
Claim 3
Dependent Claim
36 words
A semiconductor device according to claim 1, further comprising a compound semiconductor layer made of a compound semiconductor formed on the intermetallic compound layer, the compound semiconductor layer being epitaxially grown on the intermetallic compound layer.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein a film thickness of the intermetallic compound layer is above about 40 nm.
Claim 5
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein a film thickness of the intermetallic compound layer is above about 100 nm.
Claim 6
Dependent Claim
38 words
A semiconductor device according to claim 1, wherein a lattice misfit between twice of the lattice constant of the intermetallic compound layer and the lattice constant of the compound semiconductor forming the base substrate is below about 0.2%.
Claim 7
Dependent Claim
38 words
A semiconductor device according to claim 1, wherein a lattice misfit between twice of the lattice constant of the intermetallic compound layer and the lattice constant of the compound semiconductor forming the base substrate is below about 0.1%.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein the base substrate is an InP substrate.
Claim 9
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein the base substrate is an In 0 .53 Ga 0 .47 As layer or an In 0 .52 Al 0 .48 As layer.
Claim 10
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the intermetallic compound is CoIn x Al 1-x , and x is within a range of 0.37±0.04.
Claim 11
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the intermetallic compound is CoIn x Ga 1-x , and x is within a range of 0.28±0.04.
Claim 12
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the intermetallic compound is NiIn x Al 1-x , and x is within a range of 0.24±0.04.
Claim 13
Dependent Claim
21 words
A semiconductor device according to claim 7, wherein the intermetallic compound is NiIn x Ga 1-x , and x is 0.23±0.04.
Claim 14
Dependent Claim
21 words
A semiconductor device according to claim 7, wherein the intermetallic compound is FeIn x Al 1-x , and x is 0.12±0.04.
Claim 15
Dependent Claim
25 words
A semiconductor device according to claim 7, wherein the intermetallic compound is FeIn x Ga 1-x , and x is within a range of 0.12±0.04.
Claim 16
Dependent Claim
25 words
A semiconductor device according to claim 8, wherein the intermetallic compound is CoIn x Al 1-x , and x is within a range of 0.37±0.04.
Claim 17
Dependent Claim
25 words
A semiconductor device according to claim 8, wherein the intermetallic compound is CoIn x Ga 1-x , and x is within a range of 0.28±0.04.
Claim 18
Dependent Claim
25 words
A semiconductor device according to claim 8, wherein the intermetallic compound is NiIn x Al 1-x , and x is within a range of 0.24±0.04.
Claim 19
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein the intermetallic compound is NiIn x Ga 1-x , and x is 0.23±0.04.
Claim 20
Dependent Claim
21 words
A semiconductor device according to claim 8, wherein the intermetallic compound is FeIn x Al 1-x , and x is 0.12±0.04.
Claim 21
Dependent Claim
25 words
A semiconductor device according to claim 8, wherein the intermetallic compound is FeIn x Ga 1-x , and x is within a range of 0.12±0.04.
Claim 22
Dependent Claim
15 words
A semiconductor device according to claims 1, wherein the base substrate is an InAs substrate.
Claim 23
Dependent Claim
25 words
A semiconductor device according to claim 21, wherein the intermetallic compound is CoIn x Al 1-x , and x is within a range of 0.84±0.04.
Claim 24
Dependent Claim
25 words
A semiconductor device according to claim 22, wherein the intermetallic compound is CoIn x Ga 1-x , and x is within a range of 0.75±0.04.
Claim 25
Dependent Claim
25 words
A semiconductor device according to claim 22, wherein the intermetallic compound is NiIn x Al 1-x , and x is within a range of 0.71±0.04.
Claim 26
Dependent Claim
25 words
A semiconductor device according to claim 22, wherein the intermetallic compound is NiIn x Ga 1-x , and x is within a range of 0.70±0.04.
Claim 27
Dependent Claim
25 words
A semiconductor device according to claim 22, wherein the intermetallic compound is FeIn x Al 1-x , and x is within a range of 0.59±0.04.
Claim 28
Dependent Claim
25 words
A semiconductor device according to claim 22, wherein the intermetallic compound is FeIn x Ga 1-x , and x is within a range of 0.58±0.04.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-09-22 | 2001-03-24 | 2001-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-22 | 2005-03-24 | 2005-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-22 | 2009-03-24 | 2009-09-23 | $7700.00 | Window Closed / Lapsed |