Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
283 words
A synchronous memory device comprising: an address bus; a control bus; a data bus; a clock terminal adapted to receive a clock signal; a clock enable terminal adapted to receive a clock enable signal; an address decoder coupled to the address bus; a control logic circuit coupled to the control bus; a read/write circuit coupled to the data bus; a memory-cell array coupled to the address decoder, control circuit, and read/write circuit, including a plurality of row lines; a plurality of pairs of first and second complementary digit lines; an array of memory cells that each have a control terminal coupled to one of the row lines and a data terminal coupled to one of the first and second complementary digit lines of one of the pairs of complementary column lines; and a data delay circuit comprising an external clock terminal adapted to receive an external clock signal having a first state and a second state, a data terminal adapted to receive a data signal, an adjustable time delay circuit having one or more control inputs each adapted to receive a control signal, the time delay circuit adapted to receive the external clock signal at a clock input and pass a delayed clock signal to an output terminal, the time between when the external clock signal changes states and when the delayed clock signal changes states determined by the control signals received at the control inputs, and a data passing circuit receiving both the data signal and the delayed clock signal, the data passing circuit adapted to pass the data signal from the data terminal to a data output terminal after the delayed clock signal changes from the first to the second state.
Claim 2
Dependent Claim
283 words
A synchronous memory device comprising: an address bus; a control bus; a data bus; a clock terminal adapted to receive a clock signal; a clock enable terminal adapted to receive a clock enable signal; an address decoder coupled to the address bus; a control logic circuit coupled to the control bus; a read/write circuit coupled to the data bus; a memory-cell array coupled to the address decoder, control circuit, and read/write circuit, including a plurality of row lines; a plurality of pairs of first and second complementary digit lines; an array of memory cells that each have a control terminal coupled to one of the row lines and a data terminal coupled to one of the first and second complementary digit lines of one of the pairs of complementary column lines; and a data delay circuit comprising an external clock terminal adapted to receive an external clock signal having a first state and a second state, a data terminal adapted to receive a data signal, an adjustable time delay circuit having one or more control inputs each adapted to receive a control signal, the time delay circuit adapted to receive the external clock signal at a clock input and pass a delayed clock signal to an output terminal, the time between when the external clock signal changes states and when the delayed clock signal changes states determined by the control signals received at the control inputs, and a data passing circuit receiving both the data signal and the delayed clock signal, the data passing circuit adapted to pass the data signal from the data terminal to a data output terminal after the delayed clock signal changes from the first to the second state.
Claim 3
Dependent Claim
21 words
The circuit of claim 1 wherein the control signals are generated by selectively coupling the control inputs to a reference voltage.
Claim 4
Dependent Claim
78 words
The circuit of claim 1 wherein the adjustable time delay circuit further comprises: a plurality of passgates arranged in columns, each column having a different number of passgates than any other column in the time delay circuit, the passgates in the column having the highest number of passgates in the delay circuit each coupled to a respective delay element having a respective delay value, the external clock signal coupled to and passing through each of the delay elements.
Claim 5
Dependent Claim
50 words
The circuit of claim 3 wherein the number of control inputs to the delay circuit is n, the number of columns in the time delay circuit is n, and the number of passgates in the column having the highest number of passgates in the delay circuit is 2 n .
Claim 6
Dependent Claim
17 words
The circuit of claim 1 wherein the synchronous memory device is a synchronous dynamic random access memory.