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US5233564A Expired / Lapsed US ⏱️ 0.0 years remaining

Multiport memory with test signal generating circuit controlling data transfer from ram port to sam port

Assignee: Toshiba Corp
•
Filing: 1991-06-10
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Granted: 1993-08-03
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Expires: 2011-06-10
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Abstract

Abstract The disclosed semiconductor memory comprises a random access memory port, a serial access memory port, a data transfer gate formed between the two ports, and in particular a test signal generating circuit for generating a test signal to the data transfer gate to close the gate so that data stored in the serial access memory port can be read to outside, without transferring data from the random access memory port to the serial access memory port. Therefore, it is possible to discriminate an erroneous operation caused when data are read from the serial access memory port from that caused when data are transferred from the random access memory port to the serial access memory port.

Inventors

  • 👤 Shigeo Ohshima
  • 👤 Tatsuo Ikawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 16:27
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/46; G11C29/003; G11C29/02; G11C7/00; G11C7/10; G11C7/1075

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 126 words
A semiconductor memory, comprising: a random access memory port composed of memory cells arranged on a semiconductor chip in matrix fashion; a serial access memory port composed of serial data registers arranged on the same semiconductor chip in a column direction of said random access memory port; a data transfer gate provided between said random access memory port and the serial access memory port; and test signal generating means for generating a test signal to said data transfer gate to close the gate, when data stored in said serial access memory port are read to outside, whereby the data stored in the serial access memory port can be read to outside, without transferring data from said random access memory port to said serial access memory port.
Claim 2
Dependent Claim 126 words
A semiconductor memory, comprising: a random access memory port composed of memory cells arranged on a semiconductor chip in matrix fashion; a serial access memory port composed of serial data registers arranged on the same semiconductor chip in a column direction of said random access memory port; a data transfer gate provided between said random access memory port and the serial access memory port; and test signal generating means for generating a test signal to said data transfer gate to close the gate, when data stored in said serial access memory port are read to outside, whereby the data stored in the serial access memory port can be read to outside, without transferring data from said random access memory port to said serial access memory port.
Claim 3
Dependent Claim 51 words
The semiconductor memory of claim 1, which further comprises an electrode formed on the semiconductor chip and connected to said test signal generating means, and a lead connected to said electrode, said test signal generating means generating the test signal when a predetermined potential is supplied to the lead from outside.
Claim 4
Dependent Claim 36 words
The semiconductor memory of claim 1, wherein said test signal generating means generates the test signal at timing prescribed by a combination of plural signal levels not defined as ordinary operation modes of said semiconductor memory.
Claim 5
Dependent Claim 28 words
The semiconductor memory of claim 1, wherein said test signal generating means comprises means for inhibiting the test signal from being generated when said semiconductor memory is shipped.
Claim 6
Dependent Claim 37 words
The semiconductor memory of claim 1, wherein said random access memory port, said serial access memory port, and said data transfer gate are divided into a plurality of ports or gates, respectively, to enable split data transfer.

References Cited (Backward Citations)

US5109359A Cited
US4731760A Cited
JPS62279596A Cited
US4833652A Cited
DE4027051A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-08-02 1997-02-01 1997-08-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-08-02 2001-02-01 2001-08-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-08-02 2005-02-01 2005-08-03 $7700.00 Window Closed / Lapsed

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