US4833652A
Expired / Lapsed
US
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Semiconductor memory device having a self-diagnosing function
Assignee: Toshiba Corp
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Filing: 1988-03-22
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Granted: 1989-05-23
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Expires: 2008-03-22
Abstract
Abstract A defect detection circuit for detecting a defect of a memory cell, a counter for counting defects detected by the defect detect circuit, and a remediableness determination unit for determining whether a count of the counter allows remedy by a redundancy circuit, are provided in a tester for a semiconductor memory or on a memory chip having a redundancy circuit. When the count of the counter is the same as or smaller than the number of at least one of the auxiliary rows and columns of the redundancy circuit, the memory is determined to be "remediable." Otherwise, the memory is determined to be "unremediable." When the count of the counter exceeds the number of at least one of the auxiliary rows and columns of the redundancy circuit, the memory test is interrupted.
Inventors
- 👤 Mitsuo Isobe
- 👤 Tohru Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:33
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/72; G06; G06F; G06F11/00; G06F11/07; G06F11/0703; G06F11/0751; G06F11/0754; G06F11/076; G11C29/04; G11C29/08; G11C29/12; G11C29/44
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
315 words
A semiconductor memory device having a selfdiagnosing function, comprising: a memory cell array having memory cells arranged in rows connected to row lines and columns connected to column lines; a redundancy memory cell array having redundancy memory cells arranged in rows connected to said row lines and columns connected to said column lines; address input means for supplying an address signal; row decoder means responsive to said address signal for selecting one of said row lines; column decoder means responsive to said address signal for selecting one of said column lines, wherein a selected memory cell is connected to said selected row and column lines; first writing means for writing data into said selected memory cell; first sense amplifier means for reading and amplifying data written to said selected memory cell; data input/output means for controlling said first writing means and said first sense amplfier means; defect detecting means for determining whether said data read from said memory cell array is defective and for producing defect information indicating defective memory cells; defect information storing memory cells for storing said defect information; second writing means connected to said defect detecting means for writing said defect information into said defect information storing memory cells; second sense amplifier means connected to said second writing means for reading and amplifying said stored defect information; defect information output means connected to said second sense amplifier means for outputting said amplifier defect information; redundancy control means for selecting one of said redundancy memory cells in place of a defective memory cell indicated by said output defect information; counter means connected to said defect detecting means for generating a count of detected defective memory cells; and output means for indicating that said count of said counter means is greater than a predetermined number equal to one of a number of rows and a number of columns of said redundancy memory cell array.
Claim 2
Dependent Claim
315 words
A semiconductor memory device having a selfdiagnosing function, comprising: a memory cell array having memory cells arranged in rows connected to row lines and columns connected to column lines; a redundancy memory cell array having redundancy memory cells arranged in rows connected to said row lines and columns connected to said column lines; address input means for supplying an address signal; row decoder means responsive to said address signal for selecting one of said row lines; column decoder means responsive to said address signal for selecting one of said column lines, wherein a selected memory cell is connected to said selected row and column lines; first writing means for writing data into said selected memory cell; first sense amplifier means for reading and amplifying data written to said selected memory cell; data input/output means for controlling said first writing means and said first sense amplfier means; defect detecting means for determining whether said data read from said memory cell array is defective and for producing defect information indicating defective memory cells; defect information storing memory cells for storing said defect information; second writing means connected to said defect detecting means for writing said defect information into said defect information storing memory cells; second sense amplifier means connected to said second writing means for reading and amplifying said stored defect information; defect information output means connected to said second sense amplifier means for outputting said amplifier defect information; redundancy control means for selecting one of said redundancy memory cells in place of a defective memory cell indicated by said output defect information; counter means connected to said defect detecting means for generating a count of detected defective memory cells; and output means for indicating that said count of said counter means is greater than a predetermined number equal to one of a number of rows and a number of columns of said redundancy memory cell array.
Claim 3
Dependent Claim
34 words
The semiconductor memory device according to claim 1, wherein said defect detecting means includes means for comparing, in one read-out cycle, said stored data of said memory cells connected to said selected row line.
Claim 4
Dependent Claim
37 words
The semiconductor memory device according to claim 1, wherein said defect detecting means comprises an exclusive OR circuit for receiving, in one read-out cycle, said stored data of said memory cells connected to said selected row line.
Claim 5
Dependent Claim
45 words
The semiconductor memory device according to claim 1, wherein said defect detecting means includes an exclusive OR circuit for exclusive ORing said stored data of said selected row, wherein every other of said stored data are inverted before being supplied to said exclusive OR circuit.
Claim 6
Dependent Claim
24 words
The semiconductor memory device according to claim 1, wherein each row of said memory cell array includes a single defect information storing memory cell.
Claim 7
Dependent Claim
32 words
The semiconductor memory device according to claim 1, wherein said counter means includes a counter for generating said count and for generating an overflow signal when the count exceeds said predetermined number.
Claim 8
Dependent Claim
19 words
The semiconductor memory device according to claim 6, wherein said counter is reset by an external write control signal.
Claim 9
Dependent Claim
23 words
The semiconductor memory device according to claim 6, wherein said counter is a binary counter including a serially connected plurality of D flip-flops.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-22 | 1992-11-21 | 1993-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-22 | 1996-11-21 | 1997-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-22 | 2000-11-21 | 2001-05-23 | $7700.00 | Window Closed / Lapsed |