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US5950304A Expired / Lapsed US ⏱️ 0.0 years remaining

Methods of making semiconductor chip assemblies

Assignee: Adeia Semiconductor Solutions LLC
•
Filing: 1997-05-21
•
Granted: 1999-09-14
•
Expires: 2017-05-21
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Abstract

Abstract A semiconductor chip having contacts on the central region of its top surface is provided with a dielectric element overlying the central portion of the top surface. The dielectric element has a first surface facing toward the chip and a second surface facing away from the chip, a hole encompassing the central contacts and an edge bounding the hole. Central contact leads extend from the central contacts on the chip to central terminals on the dielectric element. The terminals on the dielectric element may be connected to a substrate using techniques commonly employed in surface mounting of electrical devices, such as solder bonding. The leads, and preferably the dielectric element, are flexible so that the terminals are moveable with respect to the contacts on the chip, to compensate for differential thermal expansion of the chip and substrate. The dielectric element may be provided with a compliant layer disposed between the terminals and the chip. The entire assembly is compact.

Inventors

  • 👤 Igor Y. Khandros
  • 👤 Thomas H. DiStefano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 11:20
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/7402; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10P74/00; H10P74/27; H10P74/273; H10W; H10W70/00; H10W70/40; H10W70/479; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W70/65; H10W70/657; H10W70/67; H10W70/68; H10W70/688; H10W74/00; H10W74/10; H10W74/111; H10W74/131; H10W74/144; H10W90/00; H10P72/7416; H10W72/00; H10W72/01; H10W72/013; H10W72/01331; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/50; H10W72/541; H10W72/547; H10W72/5473; H10W72/60; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/941; H10W72/9413; H10W90/20; H10W90/284; H10W90/701; H10W90/721; H10W90/722; H10W90/724; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49128; Y10T29/4913; Y10T29/49144; Y10T29/49146; Y10T29/49147; Y10T29/49169; Y10T29/49171

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 154 words
A method of making a semiconductor chip assembly comprising the steps of: (a) providing a semiconductor chip having a front surface defining the top of the chip, said front surface including a central region and a peripheral region surrounding said central region, whereby said central region is disposed inwardly of said peripheral region, said chip having central contacts disposed in said central region of said front surface; (b) assembling a dielectric element to said chip so that said dielectric element overlies said chip front surface, said dielectric element having a first surface facing towards said chip and a second surface facing away from said chip, a plurality of terminals disposed on said dielectric element and a hole encompassing said central contacts with an edge bounding said hole; (c) connecting a plurality of central contact leads between at least some of said central contacts and at least some of said terminals on said dielectric element.
Claim 2
Independent Claim 154 words
A method of making a semiconductor chip assembly comprising the steps of: (a) providing a semiconductor chip having a front surface defining the top of the chip, said front surface including a central region and a peripheral region surrounding said central region, whereby said central region is disposed inwardly of said peripheral region, said chip having central contacts disposed in said central region of said front surface; (b) assembling a dielectric element to said chip so that said dielectric element overlies said chip front surface, said dielectric element having a first surface facing towards said chip and a second surface facing away from said chip, a plurality of terminals disposed on said dielectric element and a hole encompassing said central contacts with an edge bounding said hole; (c) connecting a plurality of central contact leads between at least some of said central contacts and at least some of said terminals on said dielectric element.
Claim 3
Dependent Claim 28 words
A method as claimed in claim 1, wherein said terminals are moveable with respect to said central contacts so as to compensate for thermal expansion of said chip.
Claim 4
Dependent Claim 35 words
A method as claimed in claim 1, wherein each said central contact lead includes a terminal end integrally formed with one of said terminals and a contact end extending to one of said central contacts.
Claim 5
Dependent Claim 14 words
A method as claimed in claim 3, wherein said central contact leads are flexible.
Claim 6
Dependent Claim 28 words
A method as claimed in claim 1, wherein said dielectric element includes a compliant layer of a low modulus material, said compliant layer being disposed beneath said terminals.
Claim 7
Dependent Claim 45 words
A method as claimed in claim 5, wherein said dielectric element further includes a thin, flexible top layer formed from a material selected from the group consisting of thermoset and thermoplastic polymers overlying said compliant layer and defining said second surface of said dielectric element.
Claim 8
Dependent Claim 22 words
A method as claimed in claim 1, wherein some of said plurality of terminals are disposed adjacent the edge bounding said hole.
Claim 9
Dependent Claim 22 words
A method as claimed in claim 1, wherein said plurality of terminals are disposed at said second surface of said dielectric element.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-09-13 2003-03-15 2003-09-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-09-13 2007-03-15 2007-09-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-09-13 2011-03-15 2011-09-14 $7700.00 Window Closed / Lapsed

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