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US4237607A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of assembling semiconductor integrated circuit

Assignee: Citizen Watch Co Ltd
•
Filing: 1978-05-23
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Granted: 1980-12-09
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Expires: 1998-05-23
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Abstract

Abstract A method of assembling a semiconductor integrated circuit in which a semiconductor integrated circuit chip with bumps is bonded to a flexible film circuit substrate. The assembling method of the invention comprises a step of making the highest layer of the bump of solder or a low melting point metal treating the surface of the flexible film circuit substrate by gold-plating, and bonding the semiconductor integrated circuit chip and the flexible film circuit substrate with the former mounted face-down on the latter.

Inventors

  • 👤 Hideshi Ohno

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 23:00
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/04; H10W70/047; H10W74/00; H10W74/10; H10W74/111; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/20; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W72/952; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T29/49124; Y10T29/4913; Y10T29/49144; Y10T29/49146

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 227 words
A method of assembling a semiconductor integrated circuit comprising: (a) forming a bump on an external connecting electrode on a semiconductor integrated circuit chip; (b) first, bonding a copper foil to a base film made of heatproof high molecular weight resin; (c) etching said copper foil to form a conductive pattern on a flexible film circuit substrate; (d) forming an opening in said base film; (e) forming a portion of said conductive pattern projecting into said opening; (f) forming a solder layer as a cap metal of said bump on said semiconductor integrated circuit chip; (g) treating the surface of said conductive pattern on said flexible film circuit substrate with gold; (h) mounting said semiconductor integrated circuit chip in said opening, the chip being mounted facedown on said conductive pattern projecting into said opening; and (i) second, bonding said flexible film circuit substrate and the bump of said semiconductor integrated circuit chip, wherein the first bonding step includes forming the copper foil and the base film into a integral, unitary structure, the first bonding step further includes laminating the base film and the copper foil by coating the heatproof high molecular resin with the copper foil, and the first bonding step further includes pressing the base film and the copper foil between heated rollers thereby curing the copper foil and base film into a solidified, unitary structure.
Claim 2
Independent Claim 227 words
A method of assembling a semiconductor integrated circuit comprising: (a) forming a bump on an external connecting electrode on a semiconductor integrated circuit chip; (b) first, bonding a copper foil to a base film made of heatproof high molecular weight resin; (c) etching said copper foil to form a conductive pattern on a flexible film circuit substrate; (d) forming an opening in said base film; (e) forming a portion of said conductive pattern projecting into said opening; (f) forming a solder layer as a cap metal of said bump on said semiconductor integrated circuit chip; (g) treating the surface of said conductive pattern on said flexible film circuit substrate with gold; (h) mounting said semiconductor integrated circuit chip in said opening, the chip being mounted facedown on said conductive pattern projecting into said opening; and (i) second, bonding said flexible film circuit substrate and the bump of said semiconductor integrated circuit chip, wherein the first bonding step includes forming the copper foil and the base film into a integral, unitary structure, the first bonding step further includes laminating the base film and the copper foil by coating the heatproof high molecular resin with the copper foil, and the first bonding step further includes pressing the base film and the copper foil between heated rollers thereby curing the copper foil and base film into a solidified, unitary structure.
Claim 3
Independent Claim 204 words
A method of assembling a semiconductor integrated circuit comprising: (a) forming a bump on an external connecting electrode on a semiconductor integrated circuit chip; (b) first, bonding a copper foil to a base film made of heatproof high molecular weight resin; (c) etching said copper foil to form a conductive pattern on a flexible film circuit substrate; (d) forming an opening in said base film; (e) forming a portion of said conductive pattern projecting into said opening; (f) forming a solder layer as a cap metal of said bump on said semiconductor integrated circuit chip; (g) treating the surface of said conductive pattern on said flexible film circuit substrate with gold; (h) mounting said semiconductor integrated circuit chip in said opening, the chip being mounted facedown on said conductive pattern projecting into said opening; and (i) second, bonding said flexible film circuit substrate and the bump of said semiconductor integrated circuit chip, wherein the second bonding step includes heating the flexible film circuit substrate and said semiconductor integrated circuit chip thereby melting the cap metal and bonding the bump to the conductive pattern on the flexible film circuit substrate and the step of heating is performed for 20 seconds at 280° to 300° C.
Claim 4
Independent Claim 204 words
A method of assembling a semiconductor integrated circuit comprising: (a) forming a bump on an external connecting electrode on a semiconductor integrated circuit chip; (b) first, bonding a copper foil to a base film made of heatproof high molecular weight resin; (c) etching said copper foil to form a conductive pattern on a flexible film circuit substrate; (d) forming an opening in said base film; (e) forming a portion of said conductive pattern projecting into said opening; (f) forming a solder layer as a cap metal of said bump on said semiconductor integrated circuit chip; (g) treating the surface of said conductive pattern on said flexible film circuit substrate with gold; (h) mounting said semiconductor integrated circuit chip in said opening, the chip being mounted facedown on said conductive pattern projecting into said opening; and (i) second, bonding said flexible film circuit substrate and the bump of said semiconductor integrated circuit chip, wherein the second bonding step includes heating the flexible film circuit substrate and said semiconductor integrated circuit chip thereby melting the cap metal and bonding the bump to the conductive pattern on the flexible film circuit substrate and the step of heating is performed for 20 seconds at 280° to 300° C.
Claim 5
Dependent Claim 51 words
A method of assembling a semiconductor integrated circuit as claimed in claim 1 wherein other module components are soldered on said flexible film circuit substrate, a melting point of said solder of said cap metal is different from the melting point of a solder used for soldering said other module components.
Claim 6
Independent Claim 34 words
A method of assembling a semiconductor integrated circuit as claimed in claims 2 or 1 wherein said base film is continuously fed and positioned by means of index perforations formed on said base film.
Claim 7
Dependent Claim 37 words
A method of assembling a semiconductor integrated circuit as claimed in claim 1 wherein said semiconductor integrated circuit chip and said flexible circuit substrate are continuously passed through a heating furnace to be bonded to each other.
Claim 8
Dependent Claim 28 words
A method of assembling a semiconductor integrated circuit as claimed in claim 1 wherein said semiconductor integrated circuit chip is positioned by the inner wall of said opening.

References Cited (Backward Citations)

US3403438A Cited
US3561107A Cited
GB1120583A Cited
US3429040A Cited
US3495133A Cited
US3373481A Cited
US3647533A Cited
US3739462A Cited
US3724068A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-12-09 1984-06-09 1984-12-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-12-09 1988-06-09 1988-12-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-12-09 1992-06-09 1992-12-09 $7700.00 Window Closed / Lapsed

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