Abstract A semiconductor integrated circuit device of the beam lead type having a semiconductor interconnection substrate with apertures for integrated circuit chips therein and with metallization patterns having sharply pointed ends for penetrating oxide layers over the bonding pads of the chips and for making electrical connection thereto. Devices thus produced may be assembled and tested and failed chips replaced as necessary before the chips are ultrasonically welded to the interconnection metallization and before final fabrication of the device. The invention also includes a method for producing an interconnection substrate in which a plurality of conically shaped holes are etched into a semiconductor wafer having sharp points within the body of the wafer. A metal layer is deposited over the surface of the semiconductor wafer filling the etched holes. Sharp points are thus formed on the metal in the etched holes. Apertures are then etched in the semiconductor wafer and the metal layer etched as required to provide sharply pointed connecting probes suspended above apertures in the semiconductor wafer.
The method comprising the steps of: (a) providing an interconnection substrate comprising the steps of: (i) forming a plurality of apertures in a wafer of semiconductor material, at least some of said apertures being adapted for receiving an integrated circuit chip; and (ii) forming a plurality of conductive leads upon at least one surface of said wafer with ends of at least some of said conductive leads extending over said apertures having a pointed tip at said ends facing said aperture; (b) providing a plurality of integrated circuit chips, each one of said chips having a plurality of conductive bonding pads; (c) positioning said chips in said apertures and aligning said pointed tips with said bonding pads; (d) applying pressure to said ends of said leads forcing said pointed tips to make electrical contact with said bonding pads; (e) testing the integrated circuit chips through said electrical contacts prior to bonding the leads to the pads; (f) replacing integrated circuit chips which fail said testing; and (g) thereafter bonding said pointed tips to said bonding pads.
Claim 2
Independent Claim
176 words
The method comprising the steps of: (a) providing an interconnection substrate comprising the steps of: (i) forming a plurality of apertures in a wafer of semiconductor material, at least some of said apertures being adapted for receiving an integrated circuit chip; and (ii) forming a plurality of conductive leads upon at least one surface of said wafer with ends of at least some of said conductive leads extending over said apertures having a pointed tip at said ends facing said aperture; (b) providing a plurality of integrated circuit chips, each one of said chips having a plurality of conductive bonding pads; (c) positioning said chips in said apertures and aligning said pointed tips with said bonding pads; (d) applying pressure to said ends of said leads forcing said pointed tips to make electrical contact with said bonding pads; (e) testing the integrated circuit chips through said electrical contacts prior to bonding the leads to the pads; (f) replacing integrated circuit chips which fail said testing; and (g) thereafter bonding said pointed tips to said bonding pads.
Claim 3
Dependent Claim
36 words
The method of claim 1 wherein said step of bonding comprises the steps of: coupling an ultrasonic welding probe to said depressions in said ends of said conductive leads; and applying ultrasonic energy to said probe.
Claim 4
Dependent Claim
40 words
The method of claim 2 further comprising the steps of: assembling said interconnecting substrate and said integrated circuit chips in a package frame; and coupling at least some of said leads to external connection providing means upon said package frame.