US4574470A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor chip mounting system
Assignee: Intel Corp
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Filing: 1984-03-19
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Granted: 1986-03-11
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Expires: 2004-03-19
Abstract
Abstract A semiconductor chip module with a flat mounting surface is disclosed. A wafer-scale silicon semiconductor chip is provided with electronic circuits formed therein. The chip has a metallized back face and contacts on the opposite, front face. A solder layer secures the metallized back face of the chip to the mounting surface substantially without voids.
Inventors
- 👤 Roy J. Burt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/071; H10W72/0711; H10W72/01; H10W72/013; H10W72/01331; H10W72/30; H10W72/50; H10W72/59; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
99 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; thereafter metallizing the first gold layer with a second nickel-vanadium layer; thereafter metallizing the second nickel-vanadium layer with a third gold layer; and thereafter heat treating the metallized semiconductor chip to cause the first gold layer to react with the silicon of the semiconductor chip, the second metal layer preventing diffusion of silicon through the third gold metal layer where it could form silicon dioxide at the surface.
Claim 2
Independent Claim
99 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; thereafter metallizing the first gold layer with a second nickel-vanadium layer; thereafter metallizing the second nickel-vanadium layer with a third gold layer; and thereafter heat treating the metallized semiconductor chip to cause the first gold layer to react with the silicon of the semiconductor chip, the second metal layer preventing diffusion of silicon through the third gold metal layer where it could form silicon dioxide at the surface.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said heat treating step additionally comprises causing a portion of the second nickel-vanadium layer to diffuse into the third gold layer to form an alloy.
Claim 4
Dependent Claim
26 words
The method of claim 1 and additionally comprising the step of metallizing the third gold layer with a fourth metal layer to provide a wetable surface.
Claim 5
Independent Claim
88 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; thereafter metallizing the first gold layer with a first nickel-vanadium layer; and thereafter heat treating the semiconductor chip at less than 363° C. to react the gold with the silicon to form a diffusion of gold and silicon, and to diffuse a portion of the nickel-vanadium layer through the first gold layer to form a nickel-rich silicide.
Claim 6
Independent Claim
88 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; thereafter metallizing the first gold layer with a first nickel-vanadium layer; and thereafter heat treating the semiconductor chip at less than 363° C. to react the gold with the silicon to form a diffusion of gold and silicon, and to diffuse a portion of the nickel-vanadium layer through the first gold layer to form a nickel-rich silicide.
Claim 7
Dependent Claim
48 words
The method of claim 4 and additionally comprising metallizing the first nickel-vanadium layer with a second gold layer prior to said heat treating step, and wherein the heat treating step includes diffusing a portion of the first nickel-vanadium layer into the second gold layer to form an alloy.
Claim 8
Dependent Claim
44 words
The method of claim 5 and additionally comprising the steps of metallizing a second nickel-vanadium layer and a third gold layer in series over the second gold layer subsequent to said heat treating step, the third gold layer providing a wetable surface for solder.
Claim 9
Independent Claim
148 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; metallizing the first gold layer with a first nickel-vanadium layer; metallizing the first nickel-vanadium layer with a second gold layer; thereafter heat treating the semiconductor chip at less than about 363° C. to react the first gold layer with the silicon to form a diffusion of gold and silicon, diffuse a portion of the first nickel-vanadium layer through the gold layer to form a nickel-rich silicide, and diffuse a portion of the first nickel-vanadium layer into the second gold layer to form an alloy; thereafter metallizing the alloy layer with a second nickel vanadium layer; and thereafter metallizing the second nickel-vanadium layer with a third gold layer, the third gold layer providing a wetable surface for soldering.
Claim 10
Independent Claim
148 words
A method of preparing the back face of a silicon semiconductor chip for soldering comprising the steps of: metallizing the back face of the semiconductor chip with a first gold layer; metallizing the first gold layer with a first nickel-vanadium layer; metallizing the first nickel-vanadium layer with a second gold layer; thereafter heat treating the semiconductor chip at less than about 363° C. to react the first gold layer with the silicon to form a diffusion of gold and silicon, diffuse a portion of the first nickel-vanadium layer through the gold layer to form a nickel-rich silicide, and diffuse a portion of the first nickel-vanadium layer into the second gold layer to form an alloy; thereafter metallizing the alloy layer with a second nickel vanadium layer; and thereafter metallizing the second nickel-vanadium layer with a third gold layer, the third gold layer providing a wetable surface for soldering.
Claim 11
Dependent Claim
16 words
The method of claim 1, 4 or 7 wherein each said metallizing step comprises vacuum sputtering.
Claim 12
Independent Claim
97 words
A method of preparing the back face of a silicon semiconductor chip for attachment to a mounting surface comprising the steps of: forming a reaction layer of gold reacted to the silicon; forming a barrier layer of nickel-vanadium overlying the reaction layer; heat treating the semiconductor chip to form an alloy between the gold and the nickel-vanadium; forming a wetable surface layer overlying the barrier layer; and securing the mounting surface to the barrier layer utilizing a low temperature solder layer having a melting/freezing temperature of about 160° C., the wetable layer being leached into the solder.
Claim 13
Independent Claim
97 words
A method of preparing the back face of a silicon semiconductor chip for attachment to a mounting surface comprising the steps of: forming a reaction layer of gold reacted to the silicon; forming a barrier layer of nickel-vanadium overlying the reaction layer; heat treating the semiconductor chip to form an alloy between the gold and the nickel-vanadium; forming a wetable surface layer overlying the barrier layer; and securing the mounting surface to the barrier layer utilizing a low temperature solder layer having a melting/freezing temperature of about 160° C., the wetable layer being leached into the solder.
Claim 14
Dependent Claim
55 words
The method of claim 9 wherein said heat treating step includes heat treating the semiconductor chip at less than 363° C. to react the gold with the silicon to form a diffusion of gold and silicon, and to diffuse a portion of the nickel-vanadium layer through the first gold layer to form a nickel-rich silicide.
Claim 15
Dependent Claim
52 words
The method of claim 10 wherein the barrier layer forming step comprises metallizing the first nickel-vanadium layer with a second gold layer prior to said heat treating step, and wherein the heat treating step includes diffusing a portion of the first nickel-vanadium layer into the second gold layer to form an alloy.
References Cited (Backward Citations)
US4176443A
Cited
US4454528A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-03-10 | 1989-09-09 | 1990-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-03-10 | 1993-09-09 | 1994-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-03-10 | 1997-09-09 | 1998-03-11 | $7700.00 | Window Closed / Lapsed |