Patent US7727908B2 successfully refreshed from Google Patents.
US7727908B2
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Deposition of ZrA1ON films
Assignee: Micron Technology Inc
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Filing: 2006-08-03
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Granted: 2010-06-01
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Expires: 2026-08-03
Abstract
Abstract Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices. Forming the dielectric layer may include depositing zirconium oxide using atomic layer deposition and precursor chemicals, followed by depositing aluminum nitride using precursor chemicals, and repeating. The dielectric layer may be used as the gate insulator of a MOSFET, a capacitor dielectric, and a tunnel gate insulator in flash memories.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45544; C23C16/45546; H10D; H10D1/00; H10D1/60; H10D1/68; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/66; H10P14/662; H10P14/69391; H10P14/69392; H10P14/69395
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
189 words
A method of forming a gate dielectric, comprising: exposing a substrate surface at a temperature between 250° C. to 350° C. to a precursor material including zirconium tertiary-butoxide and trimethyl-aluminum simultaneously for a time period of between 0.3 to 2.0 seconds; exposing the substrate surface to at least one first purge material selected from hydrogen, helium, neon, nitrogen, and argon for a time period of between 1 to 5 seconds; exposing the substrate surface to at least one reactant material including water vapor, oxygen, hydrogen peroxide, ozone and nitrous oxide for a time period of between 0.5 to 5.0 seconds to form a first dielectric material having a thickness ranging from 0.1 to 0.2 nanometers and a formula of approximately ZrAlON; exposing the substrate surface to at least one second purge material selected from hydrogen, helium, neon, nitrogen, and argon for a time period of between 1 to 5 seconds to complete a first deposition cycle to form a first dielectric layer having a first thickness; and repeating the first deposition cycle to form additional dielectric layers having the first thickness until a final dielectric material thickness is obtained.
Claim 2
Independent Claim
189 words
A method of forming a gate dielectric, comprising: exposing a substrate surface at a temperature between 250° C. to 350° C. to a precursor material including zirconium tertiary-butoxide and trimethyl-aluminum simultaneously for a time period of between 0.3 to 2.0 seconds; exposing the substrate surface to at least one first purge material selected from hydrogen, helium, neon, nitrogen, and argon for a time period of between 1 to 5 seconds; exposing the substrate surface to at least one reactant material including water vapor, oxygen, hydrogen peroxide, ozone and nitrous oxide for a time period of between 0.5 to 5.0 seconds to form a first dielectric material having a thickness ranging from 0.1 to 0.2 nanometers and a formula of approximately ZrAlON; exposing the substrate surface to at least one second purge material selected from hydrogen, helium, neon, nitrogen, and argon for a time period of between 1 to 5 seconds to complete a first deposition cycle to form a first dielectric layer having a first thickness; and repeating the first deposition cycle to form additional dielectric layers having the first thickness until a final dielectric material thickness is obtained.
Claim 3
Dependent Claim
51 words
The method of claim 1 , wherein the ZrAlON layer comprises a substantially continuous layer having a root mean square surface roughness of less than 0.5 nanometers and a current leakage rate of less than 1.1×10 −7 amps per cm 2 at an electric field strength of 1 megavolt per cm.
Claim 4
Dependent Claim
47 words
The method of claim 1 , further including: forming metallization lines in a metal layer disposed above and in contact with the ZrAlON layer to form a gate electrode in an integrated circuit; and annealing the device in a H 2 ambient after forming the metallization lines.
Claim 5
Dependent Claim
34 words
The method of claim 1 , wherein the first dielectric material has a formula of Zr X Al 2−X O Y N 2−Y , where X and Y are each from 0.5 to 1.5.
Claim 6
Independent Claim
137 words
A method comprising: forming a dielectric layer on a substrate comprising a zirconium aluminum oxynitride layer, including: exposing a substrate surface to a precursor material including a zirconium-containing compound and an aluminum-containing compound simultaneously in a first deposition cycle; exposing the substrate surface to at least one first purge material in the first deposition cycle; exposing the substrate surface to at least one reactant material to form a first dielectric material having a first thickness and a formula of Zr A Al B O X N Y (A>0, B>0, X>0, Y>0) in the first deposition cycle; exposing the substrate surface to at least one second purge material to complete the first deposition cycle; and repeating the first deposition cycle to form additional dielectric layers, each having the first thickness, until a final dielectric material thickness is obtained.
Claim 7
Independent Claim
137 words
A method comprising: forming a dielectric layer on a substrate comprising a zirconium aluminum oxynitride layer, including: exposing a substrate surface to a precursor material including a zirconium-containing compound and an aluminum-containing compound simultaneously in a first deposition cycle; exposing the substrate surface to at least one first purge material in the first deposition cycle; exposing the substrate surface to at least one reactant material to form a first dielectric material having a first thickness and a formula of Zr A Al B O X N Y (A>0, B>0, X>0, Y>0) in the first deposition cycle; exposing the substrate surface to at least one second purge material to complete the first deposition cycle; and repeating the first deposition cycle to form additional dielectric layers, each having the first thickness, until a final dielectric material thickness is obtained.
Claim 8
Dependent Claim
19 words
The method of claim 5 , wherein the method includes forming an electrically conductive layer on the dielectric layer.
Claim 9
Dependent Claim
38 words
The method of claim 6 , wherein forming an electrically conductive layer on the dielectric layer includes forming one or more of a metal, doped polysilicon, a silicided metal, a polycide, tantalum nitride, or a conductive organic compound.
Claim 10
Dependent Claim
33 words
The method of claim 5 , wherein exposing the substrate surface to at least one first purge material includes exposing the substrate surface to material selected from hydrogen, helium, neon, nitrogen, and argon.
Claim 11
Dependent Claim
36 words
The method of claim 5 , wherein exposing the substrate surface to at least one reactant material includes exposing the substrate surface to reactant material selected from water vapor, oxygen, hydrogen peroxide, ozone and nitrous oxide.
Claim 12
Dependent Claim
33 words
The method of claim 5 , wherein exposing the substrate surface to at least one second purge material includes exposing the substrate surface to material selected from hydrogen, helium, neon, nitrogen, and argon.
Claim 13
Dependent Claim
40 words
The method of claim 5 , wherein exposing a substrate surface to a precursor material including a zirconium-containing compound and an aluminum-containing compound includes exposing a substrate surface to a precursor material including a mixture of zirconium tertiary-butoxide and tri-methyl-aluminum.
Claim 14
Dependent Claim
52 words
The method of claim 5 , wherein exposing the substrate surface to at least one reactant material to form Zr A Al B O X N Y (A>0, B>0, X>0, Y>0) includes forming Zr X Al 2−X O Y N 2−Y , where X and Y each range from 0.5 to 1.5.
Claim 15
Dependent Claim
22 words
The method of claim 5 , wherein forming a dielectric layer on a substrate includes forming the dielectric layer on silicon-based substrate.
Claim 16
Dependent Claim
19 words
The method of claim 5 , wherein forming a dielectric layer includes forming the dielectric having a nanolaminate structure.
Claim 17
Dependent Claim
28 words
The method of claim 14 , wherein forming the dielectric having a nanolaminate structure includes forming the nanolaminate structure in a NROM (non-volatile read-only memory) flash memory device.
Claim 18
Dependent Claim
24 words
The method of claim 5 , wherein the method includes forming the dielectric layer in an integrated circuit configured to couple to a controller.
Claim 19
Dependent Claim
47 words
The method of claim 5 , wherein exposing a substrate surface to a precursor material includes exposing a substrate surface to Zr[(CH 3 ) 2 ] 4 , Zr[(C 2 H 5 ) 2 ] 4 , or Zr[(CH 3 )(C 2 H 5 )] 4 .
Claim 20
Dependent Claim
39 words
The method of claim 5 , wherein exposing a substrate surface to a precursor material includes exposing a substrate surface to Al(CH 3 ) 3 , AlH 3 , or N(CH 3 ) 2 (C 2 H 5 ).
Claim 21
Dependent Claim
26 words
The method of claim 5 , wherein exposing the substrate surface to at least one reactant material includes exposing the substrate surface to NH 3 .
Claim 22
Dependent Claim
17 words
The method of claim 5 , wherein the method includes forming the dielectric layer in a memory.
Claim 23
Dependent Claim
36 words
The method of claim 5 , wherein controlling the forming of the dielectric layer to form the dielectric layer having a root mean square surface roughness that is less than one tenth of the layer thickness.
Claim 24
Dependent Claim
22 words
The method of claim 5 , wherein the method includes forming the dielectric layer separated from the substrate by a diffusion barrier.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2013-05-31 | 2013-11-30 | 2014-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-05-31 | 2017-11-30 | 2018-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-05-31 | 2021-11-30 | 2022-06-01 | $7700.00 | Window Closed / Lapsed |