US7160577B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
Assignee: Micron Technology Inc
•
Filing: 2002-05-02
•
Granted: 2007-01-09
•
Expires: 2022-05-02
Abstract
Abstract The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:48
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45574; C23C16/4412; C23C16/45523; C23C16/45525; C23C16/45544; C23C16/45565
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
48 words
A method of operating a deposition system having a gas-distribution fixture for distributing gas over a substrate, the method comprising: introducing an aluminum precursor into the chamber through the gas-distribution fixture; and purging the chamber of at least a portion of the aluminum precursor through the gas-distribution fixture.
Claim 2
Independent Claim
48 words
A method of operating a deposition system having a gas-distribution fixture for distributing gas over a substrate, the method comprising: introducing an aluminum precursor into the chamber through the gas-distribution fixture; and purging the chamber of at least a portion of the aluminum precursor through the gas-distribution fixture.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein purging comprises operating a pump coupled to the gas-distribution fixture.
Claim 4
Dependent Claim
23 words
The method of claim 1 , further comprising: changing relative position of the gas-distribution fixture and a substrate before introducing the aluminum precursor.
Claim 5
Dependent Claim
21 words
The method of claim 1 , wherein the aluminum precursor consists essentially of trimethylaluminum, and the oxidant consist essentially of water.
Claim 6
Independent Claim
49 words
A method of operating a deposition system, the method comprising: providing a first chamber including at least one substrate; forming a second chamber within the first chamber and substantially enclosing the one substrate; introducing an oxidant into the second chamber; and introducing an aluminum precursor into the second chamber.
Claim 7
Independent Claim
49 words
A method of operating a deposition system, the method comprising: providing a first chamber including at least one substrate; forming a second chamber within the first chamber and substantially enclosing the one substrate; introducing an oxidant into the second chamber; and introducing an aluminum precursor into the second chamber.
Claim 8
Dependent Claim
37 words
The method of claim 5 wherein the deposition system includes a surface supporting the one substrate and a gas-distribution fixture; and wherein forming the second chamber comprises reducing a distance between the gas-distribution fixture and the substrate.
Claim 9
Dependent Claim
21 words
The method of claim 5 , wherein the aluminum precursor consists essentially of trimethylaluminum, and the oxidant consists essentially of water.
Claim 10
Independent Claim
80 words
A method of operating a deposition system, the method comprising: loading at least one substrate into a first chamber; forming a second chamber around the one substrate; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and unloading the one substrate from the first chamber.
Claim 11
Independent Claim
80 words
A method of operating a deposition system, the method comprising: loading at least one substrate into a first chamber; forming a second chamber around the one substrate; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and unloading the one substrate from the first chamber.
Claim 12
Dependent Claim
16 words
The method of claim 8 , wherein the recited acts are performed in the recited order.
Claim 13
Dependent Claim
42 words
The method of claim 8 , wherein the deposition system includes a surface supporting the one substrate and a gas-distribution fixture; and wherein forming the second chamber around the one substrate comprises reducing a distance between the gas-distribution fixture and the substrate.
Claim 14
Dependent Claim
21 words
The method of claim 8 , wherein the aluminum precursor consists essentially of trimethylaluminum, and the oxidant consist essentially of water.
Claim 15
Independent Claim
88 words
A method of operating a deposition system, the method comprising: loading at least one substrate into a first chamber; forming a second chamber around the one substrate; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and annealing the one substrate in the first chamber; unloading the one substrate from the first chamber.
Claim 16
Independent Claim
88 words
A method of operating a deposition system, the method comprising: loading at least one substrate into a first chamber; forming a second chamber around the one substrate; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and annealing the one substrate in the first chamber; unloading the one substrate from the first chamber.
Claim 17
Dependent Claim
16 words
The method of claim 12 , wherein the recited acts are performed in the recited order.
Claim 18
Dependent Claim
42 words
The method of claim 12 , wherein the deposition system includes a surface supporting the one substrate and a gas-distribution fixture; and wherein forming the second chamber around the one substrate comprises reducing a distance between the gas-distribution fixture and the substrate.
Claim 19
Dependent Claim
21 words
The method of claim 12 , wherein the aluminum precursor consists essentially of trimethylaluminum, and the oxidant consist essentially of water.
Claim 20
Independent Claim
90 words
A method of making a gate dielectric layer in an integrated-circuit assembly, the method comprising: loading the integrated-circuit assembly into a first chamber; forming a second chamber around the assembly; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and annealing the assembly in the first chamber; unloading the one substrate from the first chamber.
Claim 21
Independent Claim
90 words
A method of making a gate dielectric layer in an integrated-circuit assembly, the method comprising: loading the integrated-circuit assembly into a first chamber; forming a second chamber around the assembly; introducing an oxidant into the second chamber; purging the second chamber of at least a portion of the oxidant; introducing an aluminum precursor into the second chamber; purging the second chamber of at least a portion of the aluminum precursor; opening the second chamber; and annealing the assembly in the first chamber; unloading the one substrate from the first chamber.
Claim 22
Dependent Claim
16 words
The method of claim 16 , wherein the recited acts are performed in the recited order.
Claim 23
Dependent Claim
42 words
The method of claim 16 : wherein the deposition system includes a surface supporting the one substrate and a gas-distribution fixture; and wherein forming the second chamber around the one substrate comprises reducing a distance between the gas-distribution fixture and the substrate.
Claim 24
Dependent Claim
21 words
The method of claim 16 , wherein the aluminum precursor consists essentially of trimethylaluminum, and the oxidant consist essentially of water.
References Cited (Backward Citations)
US3381114A
Cited
US3357961A
Cited
US3407479A
Cited
US3457123A
Cited
US3471754A
Cited
US3689357A
Cited
US4058430A
Cited
US4051354A
Cited
US4215156A
Cited
US4305640A
Cited
US4413022A
Cited
US4209357A
Cited
US4333808A
Cited
US4292093A
Cited
US4399424A
Cited
US4647947A
Cited
US4604162A
Cited
US5208657A
Cited
US4590042A
Cited
US4766569A
Cited
US4761768A
Cited
US4920071A
Cited
US5102817A
Cited
US4673962A
Cited
US4663831A
Cited
US4767641A
Cited
JPS62199019U
Cited
US4894801A
Cited
US5017504A
Cited
US4920396A
Cited
US4902533A
Cited
US5001526A
Cited
US5122856A
Cited
US5006192A
Cited
US5327380A
Cited
US5327380B1
Cited
US4962879A
Cited
US4948937A
Cited
US5021355A
Cited
US5028977A
Cited
US4993358A
Cited
US5198029A
Cited
US5324980A
Cited
US6057271A
Cited
US5410169A
Cited
US6110529A
Cited
US5840897A
Cited
US4987089A
Cited
US5080928A
Cited
US5032545A
Cited
US5089084A
Cited
US6143582A
Cited
US6317175B1
Cited
US5097291A
Cited
US5223081A
Cited
US5110752A
Cited
US5202278A
Cited
US5504376A
Cited
US5376575A
Cited
US5504357A
Cited
US5177028A
Cited
EP0540993A1
Cited
US5156987A
Cited
US5302461A
Cited
US5466625A
Cited
US5528062A
Cited
US5572052A
Cited
US5320880A
Cited
US5414288A
Cited
US5234535A
Cited
US5266514A
Cited
US5421953A
Cited
US5422499A
Cited
US5391911A
Cited
US5438009A
Cited
US5616934A
Cited
US5522932A
Cited
US5441591A
Cited
US5644540A
Cited
US5392245A
Cited
US5445986A
Cited
US5674563A
Cited
US5460316A
Cited
US5483094A
Cited
US5416041A
Cited
US5562952A
Cited
US5393704A
Cited
US5455445A
Cited
US5396093A
Cited
US5492853A
Cited
US5414287A
Cited
US5460988A
Cited
US5495441A
Cited
JPH07320996A
Cited
US5827571A
Cited
US5440158A
Cited
US5483487A
Cited
US5810923A
Cited
US5828080A
Cited
US5822256A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2010-01-08 | 2010-07-10 | 2011-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2014-01-08 | 2014-07-10 | 2015-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2018-01-08 | 2018-07-10 | 2019-01-09 | $7700.00 | Window Closed / Lapsed |