Patent US5164966A successfully refreshed from Google Patents.
US5089084A
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US
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Hydrofluoric acid etcher and cascade rinser
Assignee: Micron Technology Inc
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Filing: 1990-12-03
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Granted: 1992-02-18
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Expires: 2010-12-03
Abstract
Abstract An apparatus used to HF gas etch a plurality of integrated circuit wafers within an etch chamber, followed by a de-ionized water cascade rinse in the chamber. On completion of the rinse and removal of the wafer carriers, the apparatus, housing, and supply conduits are purged with an inert gas to prepare the apparatus for a next batch of wafer carriers. The apparatus includes process-control means for automatically controlling each step of the process.
Inventors
- 👤 Navjot Chhabra
- 👤 Loyal Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:30
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
148 words
An HF acid etcher and rinser apparatus for etching and rinsing a plurality of integrated circuit wafers comprising: a sealable housing; an etching chamber contained within the housing; a vapor tank coupled to the etching chamber; HF supply means for providing HF gas through an HF flow-control means to the etching chamber; a nitrogen (N 2 ) supply means for providing N 2 gas through a N 2 flow-control means to the etching chamber and to the vapor tank; a DI water-supply means in communication with the etch chamber and the vapor tank; conduit and valve means for connecting an output from the HF gas flow-control means to an output from the N 2 flow-control means, to an output from the vapor tank N 2 flow-control means, and to the etch chamber; and an automatic controller means for controlling etch, rinse, clean, and purge cycle of the apparatus.
Claim 2
Dependent Claim
148 words
An HF acid etcher and rinser apparatus for etching and rinsing a plurality of integrated circuit wafers comprising: a sealable housing; an etching chamber contained within the housing; a vapor tank coupled to the etching chamber; HF supply means for providing HF gas through an HF flow-control means to the etching chamber; a nitrogen (N 2 ) supply means for providing N 2 gas through a N 2 flow-control means to the etching chamber and to the vapor tank; a DI water-supply means in communication with the etch chamber and the vapor tank; conduit and valve means for connecting an output from the HF gas flow-control means to an output from the N 2 flow-control means, to an output from the vapor tank N 2 flow-control means, and to the etch chamber; and an automatic controller means for controlling etch, rinse, clean, and purge cycle of the apparatus.
Claim 3
Dependent Claim
61 words
The apparatus as recited in claim 1 and wherein the housing further comprises: an air-tight enclosure; a lid on the front of the enclosure; a plenum within the enclosure; a plurality of conduit connections for air, water, and nitrogen supply and drain connections on a lower section of the housing; and a control panel on an upper section of the housing.
Claim 4
Dependent Claim
102 words
The apparatus as recited in claim 1 and wherein the etch chamber further comprises: a pair of ends; a top section; a bottom; a front and back section a plurality of box-like sections formed by the ends, front and back section, and an X-shaped center divider, the center divider having a plurality of conduits and connecting orifices that direct water and gas into the chamber sections onto the integrated circuit wafers contained within a wafer carrier; a pair of slots for discharge of cascade rinse water in the ends of the chamber; and a drain connection for discharge of spray rinse water.
Claim 5
Dependent Claim
39 words
The apparatus as recited in claim 1 and wherein the vapor tank is coupled to the etch chamber by conduit means coupling an air-operated control valve to a needle valve and then to a gas and vapor mix line.
Claim 6
Dependent Claim
61 words
The apparatus as recited in claim 1 and wherein the HF gas means consists of a plurality of gas bottles communicating with the HF flow control means by a pair of HF tank isolation valves and conduits connecting in sequence: a first air-operated valve; a pressure regulating valve; a flow meter; a second air-operated valve; and a plurality of needle valves.
Claim 7
Dependent Claim
49 words
The apparatus as recited in claim 1 and wherein the nitrogen supply means consists of a pressure-regulating valve, a nitrogen air-operated valve, a flow meter, communicating with the nitrogen flow control means, and conduits connecting in sequence: an air-operated valve; a flow meter; and a plurality of needle valves.
Claim 8
Dependent Claim
40 words
The apparatus as recited in claim 1 and wherein the nitrogen supply means to the vapor tank comprises: a conduit connecting the supply means to an air-operated valve; a needle valve; and a flow meter connecting to the vapor tank.
Claim 9
Dependent Claim
48 words
The apparatus as recited in claim 1 and wherein: a DI water supply conduit connects to the vapor tank through an air-operated valve and a needle valve; and a conduit from the DI water supply connects to the etch chamber via a flow meter and an air-operated valve.
Claim 10
Dependent Claim
43 words
The apparatus as recited in claim 3 and wherein the conduit and valve means comprises a plurality of a gas mixing lines connecting to moist N 2 gas lines connecting to air-operated valves which connect to the box-like sections of the etch chamber.
Claim 11
Dependent Claim
62 words
The apparatus as recited in claim 1 and wherein the automatic controller has an output to a plurality of electrically operated air-solenoid valves that supply air to the air-operated valves that are part of the HF supply means, the HF flow control means, the DI water supply means, the N 2 flow control means, and the etch chamber conduit and valve means.
Claim 12
Independent Claim
159 words
A method of etching and washing a plurality of integrated circuit (IC) wafers comprising: loading the wafers into a plurality of wafer carriers; placing the wafer carriers within the etch chamber which is contained in a plenum; activating an automatic controller that controls an etch cycle; purging the etch chamber with nitrogen; turning on a nitrogen, water, and hydrogen fluoride (HF) supply means to provide a moisturized etch vapor to an etch chamber section; etching a layer of silicon oxide from the IC wafers; stopping the HF and water supply means to terminate the etch; opening a plenum drain valve and a DI cascade rinse water supply valve to supply water to the chamber; rinsing the wafer carriers and wafers; securing the rinse; initiating a chamber cleaning rinse; stopping the cycle; removing the wafer carrier from the chamber; draining the water from the chamber and plenum; purging the chamber with nitrogen; closing the drains; and stopping the nitrogen purge.
Claim 13
Independent Claim
159 words
A method of etching and washing a plurality of integrated circuit (IC) wafers comprising: loading the wafers into a plurality of wafer carriers; placing the wafer carriers within the etch chamber which is contained in a plenum; activating an automatic controller that controls an etch cycle; purging the etch chamber with nitrogen; turning on a nitrogen, water, and hydrogen fluoride (HF) supply means to provide a moisturized etch vapor to an etch chamber section; etching a layer of silicon oxide from the IC wafers; stopping the HF and water supply means to terminate the etch; opening a plenum drain valve and a DI cascade rinse water supply valve to supply water to the chamber; rinsing the wafer carriers and wafers; securing the rinse; initiating a chamber cleaning rinse; stopping the cycle; removing the wafer carrier from the chamber; draining the water from the chamber and plenum; purging the chamber with nitrogen; closing the drains; and stopping the nitrogen purge.
Claim 14
Dependent Claim
17 words
The method as recited in claim 11 and wherein the etching time is less than on minute.
Claim 15
Dependent Claim
29 words
The method as recited in claim 11 and wherein the cascade rinse water exits the chamber section at a slot in a wall of an end of the chamber.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-17 | 1995-08-19 | 1996-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-17 | 1999-08-19 | 2000-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-17 | 2003-08-19 | 2004-02-18 | $7700.00 | Window Closed / Lapsed |