US7235854B2
Expired / Lapsed
US
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Lanthanide doped TiOx dielectric films
Assignee: Micron Technology Inc
•
Filing: 2004-02-27
•
Granted: 2007-06-26
•
Expires: 2024-02-27
Abstract
Abstract A dielectric film containing lanthamide doped TiO x and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO 2 . A dielectric film is formed by ion assisted electron beam evaporation of TiO 2 and electron beam evaporation of a lanthamide selected from a group consisting of Nd, Tb, and Dy. The growth rate is controlled to provide a dielectric film having a lanthamide content ranging from about ten to about thirty percent of the dielectric film. These dielectric films containing lanthamide doped TiO x are amorphous and thermodynamically stable such that the lanthamide doped TiO x will have minimal reactions with a silicon substrate or other structures during processing.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69397; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/083; C23C14/22; C23C14/54; C23C14/548; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/031; H10D64/035; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10D64/693; H10P14/6334; H10P14/66; H10P14/662; H10P14/69391; H10P14/69396; H10P14/69398
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
45 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x .
Claim 2
Dependent Claim
45 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x .
Claim 3
Dependent Claim
28 words
The electronic device of claim 1 , wherein the lanthanide has a concentration in the dielectric layer of between about 10% and about 30% of the dielectric layer.
Claim 4
Dependent Claim
22 words
The electronic device of claim 1 , wherein the dielectric layer has a dielectric constant ranging from about 50 to about 110.
Claim 5
Dependent Claim
30 words
The electronic device of claim 1 , wherein the dielectric layer has an equivalent oxide thickness (t eq ) in the range from about 1.5 Angstroms to about 5 Angstroms.
Claim 6
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Nd, wherein the TiO x layer doped with Nd contains oxygen in addition to oxygen in TiO x .
Claim 7
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Nd, wherein the TiO x layer doped with Nd contains oxygen in addition to oxygen in TiO x .
Claim 8
Dependent Claim
26 words
The electronic device of claim 5 , wherein the dielectric layer has a Nd doping of between about 10% and about 30% of the dielectric layer.
Claim 9
Dependent Claim
26 words
The electronic device of claim 5 , wherein the TiO x layer doped with Nd has a dielectric constant ranging from about 50 to about 110.
Claim 10
Dependent Claim
24 words
The electronic device of claim 5 , wherein the dielectric layer has an equivalent oxide thickness (t eq ) of less than 3 Angstroms.
Claim 11
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Tb, wherein the TiO x layer doped with Tb contains oxygen in addition to oxygen in TiO x .
Claim 12
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Tb, wherein the TiO x layer doped with Tb contains oxygen in addition to oxygen in TiO x .
Claim 13
Dependent Claim
28 words
The electronic device of claim 9 , wherein the TiO x layer has a Tb concentration of between about 10% and about 30% of the TiO x layer.
Claim 14
Dependent Claim
22 words
The electronic device of claim 9 , wherein the dielectric layer has a dielectric constant ranging from about 50 to about 110.
Claim 15
Dependent Claim
30 words
The electronic device of claim 9 , wherein the dielectric layer has an equivalent oxide thickness (t eq ) in the range from about 1.5 Angstroms to about 5 Angstroms.
Claim 16
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Dy, wherein the TiO x layer doped with Dy contains oxygen in addition to oxygen in TiO x .
Claim 17
Dependent Claim
43 words
An electronic device comprising: a substrate; and a dielectric layer disposed on the substrate, the dielectric layer containing a TiO x layer doped with Dy, wherein the TiO x layer doped with Dy contains oxygen in addition to oxygen in TiO x .
Claim 18
Dependent Claim
26 words
The electronic device of claim 13 , wherein the dielectric layer has a Dy concentration of between about 10% and about 30% of the dielectric layer.
Claim 19
Dependent Claim
23 words
The electronic device of claim 13 , wherein the TiO x layer has a dielectric constant ranging from about 50 to about 110.
Claim 20
Dependent Claim
24 words
The electronic device of claim 13 , wherein the dielectric layer has an equivalent oxide thickness (t eq ) of less than 20 Angstroms.
Claim 21
Dependent Claim
84 words
A transistor comprising: a source region disposed in a substrate; a drain region disposed in the substrate; a body region located between the source region and the drain region; a dielectric layer disposed on the body region between the source region and the drain region, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; and a gate coupled to the dielectric layer.
Claim 22
Dependent Claim
84 words
A transistor comprising: a source region disposed in a substrate; a drain region disposed in the substrate; a body region located between the source region and the drain region; a dielectric layer disposed on the body region between the source region and the drain region, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; and a gate coupled to the dielectric layer.
Claim 23
Dependent Claim
34 words
The transistor of claim 17 , wherein the dielectric layer containing the TiO x layer doped with the lanthanide includes a TiO x layer doped with one or more of Nd, Tb, or Dy.
Claim 24
Dependent Claim
13 words
The transistor of claim 17 , wherein the dielectric layer is substantially amorphous.
Claim 25
Dependent Claim
23 words
The transistor of claim 17 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 110.
Claim 26
Dependent Claim
29 words
The transistor of claim 17 , wherein the dielectric layer exhibits an equivalent oxide thickness (t eq ) in the range from about 1.5 Angstroms to about 5 Angstroms.
Claim 27
Dependent Claim
23 words
The transistor of claim 17 , wherein the dielectric layer exhibits an equivalent oxide thickness (t eq ) of less than 3 Angstroms.
Claim 28
Dependent Claim
54 words
The transistor of claim 17 , wherein the transistor further includes: a floating gate situated between the body region and the gate; and a floating gate dielectric disposed on the floating gate with the gate disposed on the floating gate dielectric, the floating gate dielectric having a TiO x layer doped with a lanthanide.
Claim 29
Dependent Claim
14 words
The transistor of claim 17 , wherein the transistor is a floating gate transistor.
Claim 30
Dependent Claim
61 words
A capacitor comprising: a first conductive layer disposed on a substrate; a dielectric layer disposed on the first conductive layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; and a second conductive layer disposed on the dielectric layer.
Claim 31
Dependent Claim
61 words
A capacitor comprising: a first conductive layer disposed on a substrate; a dielectric layer disposed on the first conductive layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; and a second conductive layer disposed on the dielectric layer.
Claim 32
Dependent Claim
34 words
The capacitor of claim 25 , wherein the dielectric layer containing the TiO x layer doped with the lanthanide includes a TiO x layer doped with one or more of Nd, Tb, or Dy.
Claim 33
Dependent Claim
13 words
The capacitor of claim 25 , wherein the dielectric layer is substantially amorphous.
Claim 34
Dependent Claim
23 words
The capacitor of claim 25 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 110.
Claim 35
Dependent Claim
138 words
A memory comprising: a number of access transistors, each access transistor having a source region disposed in a substrate, a drain region disposed in the substrate, and a gate, at least one access transistor including a dielectric layer disposed on the substrate with the gate disposed on the dielectric layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines coupled to a number of the source regions of the number of access transistors; and a number of bit lines coupled to a number of the drain regions of the number of access transistors.
Claim 36
Dependent Claim
138 words
A memory comprising: a number of access transistors, each access transistor having a source region disposed in a substrate, a drain region disposed in the substrate, and a gate, at least one access transistor including a dielectric layer disposed on the substrate with the gate disposed on the dielectric layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines coupled to a number of the source regions of the number of access transistors; and a number of bit lines coupled to a number of the drain regions of the number of access transistors.
Claim 37
Dependent Claim
34 words
The memory of claim 29 , wherein the dielectric layer containing the TiO x layer doped with the lanthanide includes a TiO x layer doped with one or more of Nd, Tb or Dy.
Claim 38
Dependent Claim
13 words
The memory of claim 29 , wherein the dielectric layer is substantially amorphous.
Claim 39
Dependent Claim
23 words
The memory of claim 28 , wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 110.
Claim 40
Dependent Claim
15 words
The memory of claim 28 , wherein the memory is a dynamic random access memory.
Claim 41
Dependent Claim
13 words
The memory of claim 28 , wherein the memory is a flash memory.
Claim 42
Dependent Claim
160 words
An electronic system, comprising: a processor; a system bus; and a memory array coupled to the processor by the system bus, the memory array including: a number of access transistors, each access transistor having a source region disposed in a substrate, a drain region disposed in the substrate, and a gate, at least one access transistor including a dielectric layer disposed on the substrate with the gate disposed on the dielectric layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines coupled to a number of the source regions of the number of access transistors; and a number of bit lines coupled to a number of the drain regions of the number of access transistors.
Claim 43
Dependent Claim
160 words
An electronic system, comprising: a processor; a system bus; and a memory array coupled to the processor by the system bus, the memory array including: a number of access transistors, each access transistor having a source region disposed in a substrate, a drain region disposed in the substrate, and a gate, at least one access transistor including a dielectric layer disposed on the substrate with the gate disposed on the dielectric layer, the dielectric layer containing a TiO x layer doped with a lanthanide, wherein the TiO x layer doped with the lanthanide contains oxygen in addition to oxygen in TiO x ; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines coupled to a number of the source regions of the number of access transistors; and a number of bit lines coupled to a number of the drain regions of the number of access transistors.
Claim 44
Dependent Claim
35 words
The electronic system of claim 35 , wherein the dielectric layer containing the TiO x layer doped with the lanthanide includes a TiO x layer doped with one or more of Nd, Tb, or Dy.
Claim 45
Dependent Claim
27 words
The electronic system of claim 35 , wherein the dielectric layer is substantially amorphous having a dielectric constant in the range from about 50 to about 110.
Claim 46
Dependent Claim
13 words
The electronic system of claim 35 , wherein the processor is a microprocessor.
Claim 47
Dependent Claim
16 words
The electronic system of claim 35 , wherein the electronic system is an information handling system.
Claim 48
Dependent Claim
14 words
The electronic system of claim 35 , wherein the electronic system is a computer.
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