US5795808A
Expired / Lapsed
US
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Method for forming shallow junction for semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-11-12
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Granted: 1998-08-18
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Expires: 2016-11-12
Abstract
Abstract A method for forming a shallow junction of a semiconductor device using a zirconium film to cover a semiconductor substrate and implanting impurities into the zirconium film. A titanium film is then formed over the zirconium film and both the zirconium and the titanium films are subjected to a thermal treatment to form a zirconium silicide and a titanium silicide. Unreacted parts of the zirconium film and titanium film are removed and the zirconium and titanium silicides are then subject to a second thermal treatment.
Inventors
- 👤 Bo Hyun Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/44; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6932; H10P14/6934; H10P95/00; H10P95/90; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
130 words
A method for forming a shallow junction of a semiconductor device, comprising the steps of: providing a silicon substrate in which an element isolating film is formed defining an active region and a field region; forming a zirconium film over the silicon substrate; implanting impurities in the zirconium film to form a source/drain junction within the active region of the silicon substrate, said impurities having a conductivity opposite to that of said silicon substrate; forming a titanium film over the zirconium film; subjecting the zirconium and titanium films to a first thermal treatment to form a zirconium silicide and a titanium silicide in said source/drain junction; removing unreacted parts of the zirconium and the titanium films; and subjecting the zirconium silicide and the titanium silicide to a second thermal treatment.
Claim 2
Independent Claim
130 words
A method for forming a shallow junction of a semiconductor device, comprising the steps of: providing a silicon substrate in which an element isolating film is formed defining an active region and a field region; forming a zirconium film over the silicon substrate; implanting impurities in the zirconium film to form a source/drain junction within the active region of the silicon substrate, said impurities having a conductivity opposite to that of said silicon substrate; forming a titanium film over the zirconium film; subjecting the zirconium and titanium films to a first thermal treatment to form a zirconium silicide and a titanium silicide in said source/drain junction; removing unreacted parts of the zirconium and the titanium films; and subjecting the zirconium silicide and the titanium silicide to a second thermal treatment.
Claim 3
Dependent Claim
32 words
A method in accordance with claim 1, wherein said zirconium film is formed at a thickness of 50-200 Angstrom using an RF or DC sputtering process or an electron beam depositing process.
Claim 4
Dependent Claim
35 words
A method in accordance with claim 2, wherein said RF or DC sputtering process is carried out with Zr/Ar or Zr/Ar+N 2 precursor at a temperature of 20°-500° C. under a pressure of 1-100 mtorr.
Claim 5
Dependent Claim
39 words
A method in accordance with claim 2, wherein said electron beam depositing process is carried out by evaporating zirconium with a purity of 99.0% or higher with electron beams in a ultra vacuum of 10 -8 -10 -11 torr.
Claim 6
Dependent Claim
32 words
A method in accordance with claim 1, wherein said titanium film is formed at a thickness of 100-500 Angstrom using an RF or DC sputtering process or an electron beam depositing process.
Claim 7
Dependent Claim
35 words
A method in accordance with claim 5, wherein said RF or DC sputtering process is carried out with Ti/Ar or Ti/Ar+N 2 precursor at a temperature of 20°-500° C. under a pressure of 1-100 mtorr.
Claim 8
Dependent Claim
39 words
A method in accordance with claim 5, wherein said electron beam depositing process is carried out by evaporating titanium with a purity of 99.0% or higher with electron beams in an ultra vacuum of 10 -8 -10 -11 torr.
Claim 9
Dependent Claim
41 words
A method in accordance with claim 1, wherein said unreacted parts of said zirconium film and said titanium film are removed using an etchant comprised of ammonia water, hydrogen peroxide and deionized water which are mixed with a ratio of 1:1:5.
Claim 10
Dependent Claim
23 words
A method in accordance with claim 1, wherein said first and said second thermal treatments are of RTA treatment or furnace thermal treatment.
Claim 11
Dependent Claim
35 words
A method in accordance with claim 1, wherein said silicon substrate is of n type and said impurities are of arsenic or said silicon substrate is of p type and said impurities are of boron.
Claim 12
Dependent Claim
22 words
A method in accordance with claim 1, wherein said zirconium film and said titanium film both have the same C-49 orthorhombic structure.
Claim 13
Independent Claim
142 words
A method for forming a shallow junction of a semiconductor device, comprising the steps of: providing a silicon substrate; forming a well on the silicon substrate and an element isolation film, a gate oxide, a gate electrode and a sidewall spacer on the well, in sequence; forming a zirconium film over the resulting structure; implanting impurities in the zirconium film to form a source/drain junction within an active region of the silicon substrate, said impurities having a conductivity opposite to that of said silicon substrate; forming a titanium film over the resulting structure; subjecting the zirconium and the titanium films to a first thermal treatment to form a zirconium silicide and a titanium silicide in said source/drain junction; removing unreacted parts of the zirconium and the titanium films; and subjecting the zirconium silicide and the titanium silicide to a second thermal treatment.
Claim 14
Independent Claim
142 words
A method for forming a shallow junction of a semiconductor device, comprising the steps of: providing a silicon substrate; forming a well on the silicon substrate and an element isolation film, a gate oxide, a gate electrode and a sidewall spacer on the well, in sequence; forming a zirconium film over the resulting structure; implanting impurities in the zirconium film to form a source/drain junction within an active region of the silicon substrate, said impurities having a conductivity opposite to that of said silicon substrate; forming a titanium film over the resulting structure; subjecting the zirconium and the titanium films to a first thermal treatment to form a zirconium silicide and a titanium silicide in said source/drain junction; removing unreacted parts of the zirconium and the titanium films; and subjecting the zirconium silicide and the titanium silicide to a second thermal treatment.
Claim 15
Dependent Claim
32 words
A method in accordance with claim 12, wherein said zirconium film is formed at a thickness of 50-200 Angstrom using an RF or DC sputtering process or an electron beam depositing process.
Claim 16
Dependent Claim
35 words
A method in accordance with claim 13, wherein said RF or DC sputtering process is carried out with Zr/Ar or Zr/Ar+N 2 precursor at a temperature of 20°-500° C. under a pressure of 1-100 mtorr.
Claim 17
Dependent Claim
32 words
A method in accordance with claim 13, wherein said electron beam depositing process is carried out by evaporating zirconium with electron beams in an ultra vacuum of 10 -8 -10 -11 torr.
Claim 18
Dependent Claim
32 words
A method in accordance with claim 12, wherein said titanium film is formed at a thickness of 100-500 Angstrom using an RF or DC sputtering process or an electron beam depositing process.
Claim 19
Dependent Claim
35 words
A method in accordance with claim 16, wherein said RF or DC sputtering process is carried out with Ti/Ar or Ti/Ar+N 2 precursor at a temperature of 200°-500° C. under a pressure of 1-100 mtorr.
Claim 20
Dependent Claim
32 words
A method in accordance with claim 16, wherein said electron beam depositing process is carried out by evaporating titanium with electron beams in an ultra vacuum of 10 -8 -10 -11 torr.
Claim 21
Dependent Claim
41 words
A method in accordance with claim 12, wherein said unreacted parts of said zirconium film and said titanium film are removed using an etchant comprising of ammonia water, hydrogen peroxide and deionized water which are mixed with a ration of 1:1:5.
Claim 22
Dependent Claim
22 words
A method in accordance with claim 12, wherein said first and second thermal treatments are of RTA treatment or furnace thermal treatment.
Claim 23
Dependent Claim
35 words
A method in accordance with claim 12, wherein said silicon substrate is of n type and said impurities are of arsenic or said silicon substrate is of p type and said impurities are of boron.
Claim 24
Dependent Claim
22 words
A method in accordance with claim 12, wherein said zirconium film and said titanium film both have the same C-49 orthorhombic structure.
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