US5620926A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a contact with activation and silicide forming heat treatment
Assignee: NEC Electronics Corp
•
Filing: 1995-07-18
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Granted: 1997-04-15
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Expires: 2015-07-18
Abstract
Abstract A field oxide film 12, an n + -type dispersion layer 13, and an interlayer insulating film 14 are formed on a p-type semiconductor substrate, and a contact hole is formed therein. A titanium film 15 is deposited on the surface formed thus far, and arsenic is ion-implanted into a contact region through the titanium film, forming a phosphorus-dispersed layer. The substrate is heat-treated to activate the impurity in the phosphorus-dispersed layer 16 and to cause titanium and silicon to react with each other, thereby forming a titanium silicide film 17 in the contact region. A metal film is then deposited and patterned into a metal wiring 18 without removing a silicon nitride film 15a which has been produced from the titanium film.
Inventors
- 👤 Hiroshi Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
137 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming an insulating film on a surface of a silicon substrate; (2) forming an opening in said insulating film to partially expose the surface of said silicon substrate through said opening; (3) depositing a refractory metal on the surface of said silicon substrate, said insulating film and a sidewall of said opening; (4) implanting impurity ions selectively into the surface of said silicon substrate in said opening through said refractory metal; (5) heat-treating the silicon substrate to activate the implanted impurity ions and to selectively form a refractory metal silicide on the surface of said silicon substrate in said opening; and (6) growing a metal film on the refractory metal which has not been silicided and on the silicide generated in the heat-treating step (5).
Claim 2
Independent Claim
137 words
A method for manufacturing a semiconductor device, comprising the steps of: (1) forming an insulating film on a surface of a silicon substrate; (2) forming an opening in said insulating film to partially expose the surface of said silicon substrate through said opening; (3) depositing a refractory metal on the surface of said silicon substrate, said insulating film and a sidewall of said opening; (4) implanting impurity ions selectively into the surface of said silicon substrate in said opening through said refractory metal; (5) heat-treating the silicon substrate to activate the implanted impurity ions and to selectively form a refractory metal silicide on the surface of said silicon substrate in said opening; and (6) growing a metal film on the refractory metal which has not been silicided and on the silicide generated in the heat-treating step (5).
Claim 3
Dependent Claim
32 words
A method according to claim 1, wherein said refractory metal which is deposited in the depositing step (3) comprises titanium, said refractory metal having a thickness ranging from 10 to 100 nm.
Claim 4
Dependent Claim
30 words
A method according to claim 2, wherein said heat-treating step (5) is carried out in a nitrogen atmosphere in a temperature range from 650° C. to less than 850° C.
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said heat-treating step (5) is carried out in a nitrogen atmosphere.
Claim 6
Dependent Claim
13 words
A method according to claim 1, wherein said impurity ions comprise phosphorus ions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |