Method of manufacturing semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal silicide film on a limited area of a major surface of a silicon substrate of one conductivity type, forming an insulating film to cover said silicide film, forming an opening with an area smaller than the area of said silicide film by selectively removing said insulating film on a portion of said silicide layer, diffusing an impurity of the opposite conductivity type from the portion of said silicide which is exposed by said opening, said diffusion extending laterally into the entire area of said silicide film and into a portion of said substrate in contact with said silicide film to form a diffused region of said opposite conductivity type in said substrate.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal silicide film on a limited area of a major surface of a silicon substrate of one conductivity type, forming an insulating film to cover said silicide film, forming an opening with an area smaller than the area of said silicide film by selectively removing said insulating film on a portion of said silicide layer, diffusing an impurity of the opposite conductivity type from the portion of said silicide which is exposed by said opening, said diffusion extending laterally into the entire area of said silicide film and into a portion of said substrate in contact with said silicide film to form a diffused region of said opposite conductivity type in said substrate.

Claim 5

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal film on a major surface of a partially exposed silicon substrate, implanting inactive ions into the interface between said refractory metal film and the surface of said silicon substrate to mix the interfacial portion of both said refractory metal film and silicon substrate; carrying out a heat treatment to react said refractory metal film and silicon with each other at a region where said refractory metal film makes contact with the surface of said silicon substrate to form a refractory metal silicide layer; removing the unreacted refractory metal film; forming an insulating film to cover said silicide layer; forming an opening with an area which is smaller than the area of said silicide layer by removing said insulating film on a portion of said silicide layer to expose said portion of said silicide layer; diffusing an impurity of the opposite conductivity type from said portion of said silicide layer which is exposed by said opening, said diffusion extending laterally into said silicide layer; and diffusing said impurity from said silicide layer vertically into said silicon substrate.

Claim 6

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal film on a major surface of a partially exposed silicon substrate, implanting inactive ions into the interface between said refractory metal film and the surface of said silicon substrate to mix the interfacial portion of both said refractory metal film and silicon substrate; carrying out a heat treatment to react said refractory metal film and silicon with each other at a region where said refractory metal film makes contact with the surface of said silicon substrate to form a refractory metal silicide layer; removing the unreacted refractory metal film; forming an insulating film to cover said silicide layer; forming an opening with an area which is smaller than the area of said silicide layer by removing said insulating film on a portion of said silicide layer to expose said portion of said silicide layer; diffusing an impurity of the opposite conductivity type from said portion of said silicide layer which is exposed by said opening, said diffusion extending laterally into said silicide layer; and diffusing said impurity from said silicide layer vertically into said silicon substrate.

Claim 7

A method of manufacturing a semiconductor device comprising the steps of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer in a predetermined portion in an element-forming region of said silicon substrate adjacent to said field insulating film; forming a wiring layer of polycrystalline electrically-conductive material extending on said field insulating film and in contact with said refractory metal silicide; forming an insulating layer to cover both said refractory metal silicide layer and said wiring layer; forming in said insulating layer a hole reaching the surface of a predetermined portion of said wiring layer on said field insulating film; supplying impurities to said refractory metal silicide layer from said hole through said first wiring layer; and introducing said impurity into the portion of said silicon semiconductor substrate which is adjacent to said refractory metal silicide layer to form a diffused region under said refractory metal silicide layer in said silicon substrate.

Claim 8

A method of manufacturing a semiconductor device comprising the steps of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer in a predetermined portion in an element-forming region of said silicon substrate adjacent to said field insulating film; forming a wiring layer of polycrystalline electrically-conductive material extending on said field insulating film and in contact with said refractory metal silicide; forming an insulating layer to cover both said refractory metal silicide layer and said wiring layer; forming in said insulating layer a hole reaching the surface of a predetermined portion of said wiring layer on said field insulating film; supplying impurities to said refractory metal silicide layer from said hole through said first wiring layer; and introducing said impurity into the portion of said silicon semiconductor substrate which is adjacent to said refractory metal silicide layer to form a diffused region under said refractory metal silicide layer in said silicon substrate.

Claim 11

A method of manufacturing a semiconductor device comprising the step of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer on a predetermined portion of an element-forming region of said silicon substrate adjacent to said field insulating film; forming a first insulating film on said silicide layer; opening a first contact hole in said first insulating film on a contact portion of said silicide layer; forming a first wiring layer of polycrystalline electrically-conductive material extending on said first insulating film and in contact with said silicide layer through said first contact hole; forming a second insulating film on said first wiring layer; opening a second contact hole in said second insulating film on a contact portion of said first wiring layer; forming a second wiring layer of polycrystalline electrically-conductive material connected to said first wiring layer through said second contact hole and extending on said second insulating film; introducing a dopant impurity from at least a surface portion of said second wiring layer to said silicide layer through said first wiring layer, whereby said impurity is diffused laterally in said silicide layer and is diffused from said silicide layer to said silicon substrate to form a diffused region under said silicide layer in said silicon substrate.

Claim 12

A method of manufacturing a semiconductor device comprising the step of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer on a predetermined portion of an element-forming region of said silicon substrate adjacent to said field insulating film; forming a first insulating film on said silicide layer; opening a first contact hole in said first insulating film on a contact portion of said silicide layer; forming a first wiring layer of polycrystalline electrically-conductive material extending on said first insulating film and in contact with said silicide layer through said first contact hole; forming a second insulating film on said first wiring layer; opening a second contact hole in said second insulating film on a contact portion of said first wiring layer; forming a second wiring layer of polycrystalline electrically-conductive material connected to said first wiring layer through said second contact hole and extending on said second insulating film; introducing a dopant impurity from at least a surface portion of said second wiring layer to said silicide layer through said first wiring layer, whereby said impurity is diffused laterally in said silicide layer and is diffused from said silicide layer to said silicon substrate to form a diffused region under said silicide layer in said silicon substrate.

Claim 13

A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a major surface of a silicon substrate of one conductivity type, forming a first opening in said first insulating layer, forming a refractory metal film on said first insulating layer and in said first opening, reacting said refractory metal film and said silicon substrate with each other in said first opening to form a refractory metal silicide layer on a limited area of the major surface of said silicon substrate, forming a second insulating layer to cover said silicide layer, forming a second opening with an area smaller than the area of said silicide layer in said second insulating layer by removing a part of said second insulating layer on a portion of said silicide layer, supplying an impurity of the opposite conductivity type from said second opening to said silicide layer and diffusing said impurity from said silicide layer into said substrate to form a diffused region of said opposite conductivity type at a portion in contact with said silicide layer in said substrate.

Claim 14

A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a major surface of a silicon substrate of one conductivity type, forming a first opening in said first insulating layer, forming a refractory metal film on said first insulating layer and in said first opening, reacting said refractory metal film and said silicon substrate with each other in said first opening to form a refractory metal silicide layer on a limited area of the major surface of said silicon substrate, forming a second insulating layer to cover said silicide layer, forming a second opening with an area smaller than the area of said silicide layer in said second insulating layer by removing a part of said second insulating layer on a portion of said silicide layer, supplying an impurity of the opposite conductivity type from said second opening to said silicide layer and diffusing said impurity from said silicide layer into said substrate to form a diffused region of said opposite conductivity type at a portion in contact with said silicide layer in said substrate.