US7012311B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
Assignee: Individual
•
Filing: 2001-05-29
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Granted: 2006-03-14
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Expires: 2021-05-29
Abstract
Abstract A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
Inventors
- 👤 Tadahiro Ohmi
- 👤 Shigetoshi Sugawa
- 👤 Katsuyuki Sekine
- 👤 Yuji Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10B; H10B41/00; H10B41/30; H10B51/00; H10B51/30; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/6758; H10D30/68; H10D30/681; H10D30/683; H10D62/00; H10D62/40; H10D62/405; H10D64/01342; H10D64/01344; H10D64/01346; H10D64/031; H10D64/033; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D86/00; H10D86/201; H10D30/601; H10D64/01352
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
68 words
A semiconductor device comprising: a Si crystal having (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr. said Si oxide film being substantially free from crystal defects, and said Si oxide film having a surface state density of 10 11 eV −1 cm −2 or less.
Claim 2
Dependent Claim
68 words
A semiconductor device comprising: a Si crystal having (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr. said Si oxide film being substantially free from crystal defects, and said Si oxide film having a surface state density of 10 11 eV −1 cm −2 or less.
Claim 3
Dependent Claim
70 words
A semiconductor device comprising: a Si crystal having (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr, and a Kr concentration level decreases in said Si oxide film from a surface of said Si oxide film to an interface between said Si oxide film and said Si crystal.
Claim 4
Dependent Claim
70 words
A semiconductor device comprising: a Si crystal having (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr, and a Kr concentration level decreases in said Si oxide film from a surface of said Si oxide film to an interface between said Si oxide film and said Si crystal.
Claim 5
Dependent Claim
31 words
A semiconductor device as claimed in claim 1 , wherein said Si oxide film contains Kr with a surface density of 5×10 11 cm −2 or less at a surface thereof.
Claim 6
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 , further having a gate electrode on said Si oxide film.
Claim 7
Dependent Claim
28 words
A semiconductor device as claimed in claim 1 , wherein said crystal surface is formed on a part of a device isolation groove formed on a Si substrate.
Claim 8
Dependent Claim
21 words
A Semiconductor device as claimed in claim 1 , wherein said crystal surface forms a principal surface of said Si crystal.
Claim 9
Dependent Claim
22 words
A semiconductor device as claimed in claim 1 , wherein said crystal surface is formed on a surface of a polysilicon film.
Claim 10
Dependent Claim
83 words
A semiconductor device comprising: a Si crystal having a (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr, wherein said Kr reduces current leakage and improves breakdown characteristics of said insulation film when formed on said (111) surface of said Si crystal and said Si oxide film has a surface state density of 10 11 eV −1 cm −2 or less.
Claim 11
Dependent Claim
83 words
A semiconductor device comprising: a Si crystal having a (111) surface; and an insulation film formed on said (111) surface of said Si crystal, wherein at least a part of said insulation film comprises a Si oxide film containing Kr, wherein said Kr reduces current leakage and improves breakdown characteristics of said insulation film when formed on said (111) surface of said Si crystal and said Si oxide film has a surface state density of 10 11 eV −1 cm −2 or less.
Claim 12
Dependent Claim
40 words
A semiconductor device as claimed in claim 8 , wherein a Kr concentration level decreases in said Si oxide film from a surface of said Si oxide film to an interface between said Si oxide film and said Si crystal.
Claim 13
Dependent Claim
30 words
A semiconductor device as claimed in claim 8 , wherein said Si oxide film contains Kr with a surface density 5×10 11 cm −2 or less at a surface thereof.
Claim 14
Dependent Claim
19 words
A semiconductor device as claimed in claim 8 , further comprising a gate electrode on said Si oxide film.
Claim 15
Dependent Claim
32 words
A semiconductor device as claimed in claim 8 , wherein said (111) surface of said Si crystal is formed on a part of a device isolation groove formed on said Si crystal.
Claim 16
Dependent Claim
25 words
A semiconductor device as claimed in claim 8 , wherein said (111) surface of said Si crystal forms a principal surface of said Si crystal.
Claim 17
Dependent Claim
26 words
A semiconductor device as claimed in claim 8 , wherein said (111) surface of said Si crystal is formed on a surface of a polysilicon film.
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