US6355580B1 — Ion-assisted oxidation methods and the resulting …

Claim 1

Independent Claim 67 words

An oxidation method, comprising: providing a semiconductor substrate having a region of silicon oxide on a surface thereof; and bombarding oxygen atoms proximate said region with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to energize said oxygen atoms proximate said region and to increase a thickness of said region of silicon oxide.

Claim 2

Dependent Claim 67 words

An oxidation method, comprising: providing a semiconductor substrate having a region of silicon oxide on a surface thereof; and bombarding oxygen atoms proximate said region with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to energize said oxygen atoms proximate said region and to increase a thickness of said region of silicon oxide.

Claim 3

Dependent Claim 17 words

The method of claim 1 , wherein said providing said semiconductor substrate comprises providing a silicon substrate.

Claim 4

Dependent Claim 19 words

The method of claim 1 , including thermally oxidizing said silicon substrate to form said region of silicon oxide.

Claim 5

Dependent Claim 22 words

The method of claim 1 , wherein said bombarding comprises bombarding said region of silicon oxide with krypton, helium, or argon ions.

Claim 6

Dependent Claim 19 words

The method of claim 1 , wherein said bombarding comprises bombarding said region of silicon oxide with argon ions.

Claim 7

Dependent Claim 22 words

The method of claim 1 , wherein said bombarding is effected at a temperature of about 25° C. to about 700° C.

Claim 8

Dependent Claim 23 words

The method of claim 1 , wherein said bombarding is effected for a duration of from about 5 minutes to about 500 minutes.

Claim 9

Dependent Claim 23 words

The method of claim 1 , wherein said bombarding is effected at an energy ranging from about 1 ev to about 300 ev.

Claim 10

Dependent Claim 14 words

The oxidation method of claim 1 , wherein said bombarding comprises vertical ion bombardment.

Claim 11

Dependent Claim 15 words

The oxidation method of claim 1 , wherein said region of silicon oxide is damaged.

Claim 12

Dependent Claim 31 words

The method of claim 1 , wherein said bombarding is effected in an atmosphere with said at least one oxidant comprising at least one of oxygen, water, ozone, and hydrogen peroxide.

Claim 13

Dependent Claim 16 words

The method of claim 1 , wherein said bombarding is effected in the presence of hydrogen.

Claim 14

Dependent Claim 26 words

The method of claim 1 , including forming at least one diffusion region in a portion of said semiconductor substrate underlying said region of silicon oxide.

Claim 15

Dependent Claim 22 words

The method of claim 11 , wherein said bombarding is effected in an atmosphere with said at least one oxidant comprising water.

Claim 16

Dependent Claim 24 words

The method of claim 14 , comprising flowing said water into said atmosphere at a rate of from about 1 to about 500 sccm.

Claim 17

Dependent Claim 14 words

The method of claim 13 , wherein said forming is effected before said bombarding.

Claim 18

Dependent Claim 30 words

The method of claim 12 , comprising exposing at least said region of silicon oxide to hydrogen at a flow rate of from about 1 sccm to about 200 sccm.

Claim 19

Dependent Claim 107 words

An oxidation method, comprising: providing a semiconductor substrate including at least one diffusion region, a region of silicon oxide disposed over said at least one diffusion region on a surface of said semiconductor substrate, and a structure on said surface and laterally adjacent said a least one diffusion region; and bombarding oxygen atoms substantially over said at least one diffusion region with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to increase a thickness of said region of silicon oxide substantially over said at least one diffusion region without substantially oxidizing said structure.

Claim 20

Dependent Claim 107 words

An oxidation method, comprising: providing a semiconductor substrate including at least one diffusion region, a region of silicon oxide disposed over said at least one diffusion region on a surface of said semiconductor substrate, and a structure on said surface and laterally adjacent said a least one diffusion region; and bombarding oxygen atoms substantially over said at least one diffusion region with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to increase a thickness of said region of silicon oxide substantially over said at least one diffusion region without substantially oxidizing said structure.

Claim 21

Dependent Claim 23 words

The method of claim 18 , wherein said bombarding is effected at a temperature of from about 25° C. to about 700° C.

Claim 22

Dependent Claim 22 words

The method of claim 18 , wherein said bombarding is effected for a duration of about 5 minutes to about 50 minutes.

Claim 23

Dependent Claim 23 words

The method of claim 18 , wherein said bombarding is effected at an energy ranging from about 1 ev to about 300 ev.

Claim 24

Dependent Claim 31 words

The method of claim 18 , wherein said providing comprises providing a semiconductor substrate with said at least one diffusion region comprising one of a source region and a drain region.

Claim 25

Dependent Claim 14 words

The oxidation method of claim 18 , wherein said bombarding comprises vertical ion bombardment.

Claim 26

Dependent Claim 29 words

The oxidation method of claim 18 , wherein said providing said silicon substrate comprises providing a silicon substrate having a region of damaged silicon oxide on a surface thereof.

Claim 27

Dependent Claim 18 words

The method of claim 18 , wherein the said providing said semiconductor substrate comprises providing a silicon substrate.

Claim 28

Dependent Claim 31 words

The method of claim 18 , wherein said bombarding is effected in an atmosphere with said at least one oxidant comprising at least one of oxygen, water, ozone, and hydrogen peroxide.

Claim 29

Dependent Claim 16 words

The method of claim 18 , wherein said bombarding is effected in the presence of hydrogen.

Claim 30

Dependent Claim 22 words

The method of claim 18 , wherein said bombarding comprises bombarding said region of silicon oxide with krypton, helium, or argon ions.

Claim 31

Dependent Claim 18 words

The method of claim 25 , including oxidizing said silicon substrate to form said region of silicon oxide.

Claim 32

Dependent Claim 22 words

The method of claim 26 , wherein said bombarding is effected in an atmosphere with said at least one oxidant comprising water.

Claim 33

Dependent Claim 25 words

The method of claim 30 , comprising flowing said water into said atmosphere at a rate of from about 1 sccm to about 500 sccm.

Claim 34

Dependent Claim 30 words

The method of claim 27 , comprising exposing at least said region of silicon oxide to hydrogen at a flow rate of from about 1 sccm to about 200 sccm.

Claim 35

Dependent Claim 19 words

The method of claim 24 , wherein said bombarding comprises bombarding said region of silicon oxide with argon ions.

Claim 36

Dependent Claim 149 words

An oxidation method, comprising: providing a semiconductor substrate; forming a dielectric layer comprising silicon oxide on an active surface of said semiconductor substrate; fabricating at least one gate structure over said dielectric layer on said semiconductor substrate, said at least one gate structure including at least one exposed conductive region; forming diffusion regions in said semiconductor substrate laterally adjacent said at least one gate structure; and bombarding oxygen atoms over at least a region of said semiconductor substrate laterally adjacent said at least one gate structure with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to form or increase a thickness of said dielectric layer over at least one region of said semiconductor substrate laterally adjacent said at least one gate structure without substantially bombarding oxygen atoms adjacent said at least one exposed conductive region.

Claim 37

Dependent Claim 149 words

An oxidation method, comprising: providing a semiconductor substrate; forming a dielectric layer comprising silicon oxide on an active surface of said semiconductor substrate; fabricating at least one gate structure over said dielectric layer on said semiconductor substrate, said at least one gate structure including at least one exposed conductive region; forming diffusion regions in said semiconductor substrate laterally adjacent said at least one gate structure; and bombarding oxygen atoms over at least a region of said semiconductor substrate laterally adjacent said at least one gate structure with at least one inert ion in an atmosphere consisting essentially of said at least one inert ion and at least one oxidant to form or increase a thickness of said dielectric layer over at least one region of said semiconductor substrate laterally adjacent said at least one gate structure without substantially bombarding oxygen atoms adjacent said at least one exposed conductive region.

Claim 38

Dependent Claim 18 words

The method of claim 34 , wherein said forming said dielectric layer comprises thermally oxidizing said semiconductor substrate.

Claim 39

Dependent Claim 24 words

The method of claim 34 , wherein said bombarding is effected in the presence of oxygen, water, ozone, hydrogen peroxide, or a mixture thereof.

Claim 40

Dependent Claim 17 words

The method of claim 34 , wherein said bombarding employs krypton ions, helium ions, or argon ions.

Claim 41

Dependent Claim 12 words

The method of claim 34 , wherein said bombarding employs argon ions.

Claim 42

Dependent Claim 22 words

The method of claim 34 , wherein said bombarding is effected at a temperature of about 25° C. to about 700° C.

Claim 43

Dependent Claim 22 words

The method of claim 34 , wherein said bombarding is effected for a duration of about 5 minutes to about 50 minutes.

Claim 44

Dependent Claim 22 words

The method of claim 34 , wherein said bombarding is effected at an energy of about 1 ev to about 300 ev.

Claim 45

Dependent Claim 14 words

The oxidation method of claim 34 , wherein said bombarding comprises vertical ion bombardment.

Claim 46

Dependent Claim 26 words

The oxidation method of claim 34 , wherein said bombarding comprises bombarding at least a damaged silicon oxide region adjacent said at least one gate structure.

Claim 47

Dependent Claim 20 words

The oxidation method of claim 34 , wherein said bombarding comprises increasing a thickness of said at least a region.

Claim 48

Dependent Claim 64 words

The method of claim 34 , wherein said fabricating said at least one gate structure comprises: disposing at least one conductive layer over a portion of said dielectric layer; and removing a portion of said at least one conductive layer and at least an upper portion of said dielectric layer above areas of said semiconductor substrate where said diffusion regions are to be located.

Claim 49

Dependent Claim 26 words

The method of claim 34 , wherein said forming said diffusion regions comprises forming at least one source region and forming at least one drain region.

Claim 50

Dependent Claim 16 words

The method of claim 34 , wherein said bombarding is effected in the presence of water.

Claim 51

Dependent Claim 17 words

The method of claim 45 , wherein said providing said semiconductor substrate comprises providing a silicon substrate.

Claim 52

Dependent Claim 36 words

The method of claim 45 , wherein said removing said portion of said at least one conductive layer and said at least said upper portion of said dielectric layer comprises a photolithographic patterning and etching process.

Claim 53

Dependent Claim 23 words

The method of claim 45 , wherein said disposing said at least one conductive layer comprises depositing said at least one conductive layer.

Claim 54

Dependent Claim 18 words

The method of claim 50 , wherein said depositing said at least one conductive layer comprises depositing polysilicon.

Claim 55

Dependent Claim 19 words

The method of claim 45 , further comprising forming another dielectric layer over the at least one conductive layer.

Claim 56

Dependent Claim 31 words

The method of claim 46 , wherein said forming diffusion regions comprises implanting ions through an oxide disposed on said semiconductor substrate, at least adjacent said at least one gate structure.

Claim 57

Dependent Claim 29 words

The method of claim 47 , further comprising exposing said at least a region to said water at a flow rate of about 1 sccm to about 500 sccm.

Claim 58

Dependent Claim 17 words

The method of claim 47 , wherein said bombarding is also effected in the presence of hydrogen.

Claim 59

Dependent Claim 28 words

The method of claim 55 , further comprising exposing said at least a region to hydrogen at a flow rate of about 1 sccm to about 200 sccm.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2005-03-11	2005-09-10	2006-03-12	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2009-03-11	2009-09-10	2010-03-12	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2013-03-11	2013-09-10	2014-03-12	$7700.00	Window Closed / Lapsed

Ion-assisted oxidation methods and the resulting structures

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