US4776925A
Expired / Lapsed
US
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Method of forming dielectric thin films on silicon by low energy ion beam bombardment
Assignee: Columbia University
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Filing: 1987-04-30
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Granted: 1988-10-11
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Expires: 2007-04-30
Abstract
Abstract A low-energy oxygen and/or nitrogen ion beam with an energy level of about 60 eV is used to form an ultra-thin layer of silicon adduct on unheated silicon substrates. The ion beam is created with a single-grid Kaufman-type source and the process is performed in a vacuum chamber evacuated to a base pressure of about 3×10 -7 torr with oxygen and/or nitrogen gases, with or without argon introduced into the chamber. FET-gate-quality oxides on the order of about 45 angstroms have been produced in the successful fabrication of n-channel MOSFET's.
Inventors
- 👤 Eric R. Fossum
- 👤 Stanley S. Todorov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6316; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; Y; Y10; Y10S; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
50 words
A method for forming an adduct of silicon on a surface of a silicon substrate comprising creating an ion beam having an energy level below about 150 eV, and directing said beam toward said surface of the silicon substrate, said ion beam formed from a gas comprising oxygen or nitrogen.
Claim 2
Independent Claim
50 words
A method for forming an adduct of silicon on a surface of a silicon substrate comprising creating an ion beam having an energy level below about 150 eV, and directing said beam toward said surface of the silicon substrate, said ion beam formed from a gas comprising oxygen or nitrogen.
Claim 3
Dependent Claim
21 words
The method according to claim 1 wherein the step of creating an ion beam comprises using a single-grid Kaufman-type ion source.
Claim 4
Dependent Claim
22 words
The method according to claim 1 including the step of positioning the silicon substrate about 15 cm from the ion beam source.
Claim 5
Dependent Claim
21 words
The method according to claim 1 including the step of mounting the silicon substrate on an electrically grounded metal substrate holder.
Claim 6
Dependent Claim
20 words
The method according to claim 1 including neutralizing the charge of the ion beam by introducing electrons into the beam.
Claim 7
Dependent Claim
41 words
The method according to claim 2 further including providing a second grid placed after the first grid in the direction of the ion beam to limit the ion flux when the ion beam has an energy level above about 60 eV.
Claim 8
Dependent Claim
26 words
The method according to claim 1 further including the step of annealing the substrate at a temperature of about 400 degrees C in N 2 gas.
Claim 9
Dependent Claim
27 words
The method according to claim 1 wherein the step of creating an ion beam comprises creating an ion beam having an energy level of about 60 eV.
Claim 10
Dependent Claim
36 words
The method according to claim 1 further including the step of providing a vacuum chamber, creating the beam and positioning the silicon substrate in the vacuum chamber, evacuating the chamber, and introducing gas into the chamber.
Claim 11
Independent Claim
90 words
A method of making a MOSFET comprising: growing an initial wet oxide on a silicon wafer; masking the silicon wafer to define pn source and drain junctions; growing a field oxide on the wafer; etching windows in the field oxide; growing a gate oxide by directing an oxygen ion beam having an energy level below about 150 eV towards the silicon wafer at room temperature; and opening source and drain contact windows through the gate oxide and depositing a layer of conducting material over the contact windows to form contacts.
Claim 12
Independent Claim
90 words
A method of making a MOSFET comprising: growing an initial wet oxide on a silicon wafer; masking the silicon wafer to define pn source and drain junctions; growing a field oxide on the wafer; etching windows in the field oxide; growing a gate oxide by directing an oxygen ion beam having an energy level below about 150 eV towards the silicon wafer at room temperature; and opening source and drain contact windows through the gate oxide and depositing a layer of conducting material over the contact windows to form contacts.
Claim 13
Dependent Claim
34 words
The method according to claim 10 further including the step of annealing the wafer at a temperature of about 400 degrees C. in N 2 gas after the steps of depositing the aluminum layers.
Claim 14
Dependent Claim
42 words
The method according to claim 10 wherein the step of growing gate oxide further includes providing a vacuum chamber, positioning the ion beam source and silicon wafer in the chamber, evacuating the chamber, and introducing argon and oxygen gas into the chamber.
Claim 15
Dependent Claim
26 words
The method according to claim 10 wherein the step of growing a gate oxide comprises creating an oxygen ion beam using a single-grid Kaufman-type ion source.
Claim 16
Dependent Claim
29 words
The method according to claim 10 wherein the step of growing a gate oxide further comprises neutralizing the charge of the ion beam by introducing electrons into the beam.
Claim 17
Dependent Claim
41 words
The method according to claim 13 further including providing a second grid placed after the first grid in the direction of the ion beam to limit the ion flux when the ion beam has an energy level above about 60 eV.
Claim 18
Dependent Claim
27 words
The method according to claim 10 wherein the step of growing a gate oxide comprises directing an oxygen beam having an energy level of about 60 eV.
Claim 19
Dependent Claim
33 words
The method according to claim 10 wherein the step of growing a gate oxide comprises mounting the wafer and an electrically grounded metal substrate holder about 15 cm from the ion beam source.
Claim 20
Independent Claim
49 words
A method of forming an adduct of silicon on a surface of a silcon substrate, comprising creating an ion beam having an energy level below about 150 eV and directing said beam toward said surface of the silicon substrate, said ion beam formed at least partially by oxygen gas.
Claim 21
Independent Claim
49 words
A method of forming an adduct of silicon on a surface of a silcon substrate, comprising creating an ion beam having an energy level below about 150 eV and directing said beam toward said surface of the silicon substrate, said ion beam formed at least partially by oxygen gas.
Claim 22
Independent Claim
49 words
A method of forming an adduct of silicon on a surface of a silicon substrate, comprising creating an ion beam having an energy level below about 150 eV and directing said beam toward said surface of the silicon substrate, said ion beam formed at least partially by nitrogen gas.
Claim 23
Independent Claim
49 words
A method of forming an adduct of silicon on a surface of a silicon substrate, comprising creating an ion beam having an energy level below about 150 eV and directing said beam toward said surface of the silicon substrate, said ion beam formed at least partially by nitrogen gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-11 | 1992-04-11 | 1992-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-11 | 1996-04-11 | 1996-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-11 | 2000-04-11 | 2000-10-11 | $7700.00 | Window Closed / Lapsed |