US3563809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor devices with ion beams
Assignee: Raytheon Co
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Filing: 1968-08-05
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Granted: 1971-02-16
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Expires: 1988-08-05
Abstract
Abstract METHOD OF FABRICATING A SEMICONDUCTOR DEVICE IN WHICH P-N JUNCTIONS, PROTECTIVE COATINGS, AND MICRO-MACHINING OPERATIONS ARE ALL PERFORMED IN VACUUM BY MEANS OF ION BEAMS, AND IN WHICH METALIZATION FOR ELECTRODES AND CONNECTIONS MAY ALSO BE APPLIED.
Inventors
- 👤 Robert G Wilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:40
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D99/00; H10P30/202; H10P30/204; H10P30/208; H10P30/212; H10P30/22; H10P34/00; H10P50/00; H10P50/20; H10W; H10W74/00; H10W74/01; H10W74/40; H10W74/43
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-15 | 1974-08-17 | 1975-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-15 | 1978-08-17 | 1979-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-15 | 1982-08-17 | 1983-02-16 | $7700.00 | Window Closed / Lapsed |