US3849276A
Expired / Lapsed
US
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Process for forming reactive layers whose thickness is independent of time
Assignee: International Business Machines Corp
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Filing: 1971-03-19
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Granted: 1974-11-19
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Expires: 1991-03-19
Abstract
Abstract A method for forming reactive layers on materials where the final thickness of the reactive layer is independent of time after an initial time period in which the final thickness is attained. Films are grown by a process, such as oxidation, and are removed simultaneously by a process, such as sputtering. The parameters of the growth process and removal process are initially fixed so that at a desired final thickness, the growth rate is equal to the removal rate. When this steady-state equilibrium is reached, the thickness of the reactive layer will remain constant, independent of time. The reactive layer can be grown to the desired thickness by this method, or a thicker layer can be reduced to a lesser final thickness by this method. Very small (less than 50A) films of excellent quality can be made.
Inventors
- 👤 J Greiner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; C; C23; C23C; C23C8/00; C23C8/06; C23C8/36; H10D; H10D99/00; H10N; H10N60/00; H10N60/01; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
128 words
A METHOD FOR FORMING REACTIVE LAYERS OF CONTROLLED THICKNESS ON BASE MATERIALS, SAID REACTIVE LAYERS BEING COMBINATION OF THE BASE MATERIAL AND AT LEAST ONE CONSTITUENT WHICH REACTS WITH SAID BASE MATERIAL, COMPRISING: BRINGING SAID REACTIVE CONSTITUENT TO SAID BASE MATERIAL IN A SUBSTANTIALLY VACUUM ENVIRONMENT FOR REACTION THEREON TO GROW SAID REACTIVE LAYER AT A FIRST RATE; REMOVING SAID REACTIVE LAYER SIMULTANEOUSLY WITH SAID GROWTH, THE REMOVAL OF SAID REACTIVE LAYER OCCURING AT A SECOND RATE; ADJUSTING SAID FIRST AND SECOND RATES TO BE EQUAL FOR A DESIRED FINAL THICKNESS OF SAID REACTIVE LAYER; CONTINUING SAID GROWTH AND SAID REMOVAL AT LEAST UNTIL SAID FIRST AND SECOND RATES OF GROWTH AND REMOVAL RESPECTIVELY ARE EQUAL, AT WHICH TIME A FINAL THICKNESS OF SAID REACTIVE LAYER IS ACHIEVED.
Claim 2
Independent Claim
128 words
A METHOD FOR FORMING REACTIVE LAYERS OF CONTROLLED THICKNESS ON BASE MATERIALS, SAID REACTIVE LAYERS BEING COMBINATION OF THE BASE MATERIAL AND AT LEAST ONE CONSTITUENT WHICH REACTS WITH SAID BASE MATERIAL, COMPRISING: BRINGING SAID REACTIVE CONSTITUENT TO SAID BASE MATERIAL IN A SUBSTANTIALLY VACUUM ENVIRONMENT FOR REACTION THEREON TO GROW SAID REACTIVE LAYER AT A FIRST RATE; REMOVING SAID REACTIVE LAYER SIMULTANEOUSLY WITH SAID GROWTH, THE REMOVAL OF SAID REACTIVE LAYER OCCURING AT A SECOND RATE; ADJUSTING SAID FIRST AND SECOND RATES TO BE EQUAL FOR A DESIRED FINAL THICKNESS OF SAID REACTIVE LAYER; CONTINUING SAID GROWTH AND SAID REMOVAL AT LEAST UNTIL SAID FIRST AND SECOND RATES OF GROWTH AND REMOVAL RESPECTIVELY ARE EQUAL, AT WHICH TIME A FINAL THICKNESS OF SAID REACTIVE LAYER IS ACHIEVED.
Claim 3
Dependent Claim
18 words
The method of claim 1, where said base material is a metal, and said reactive constituent is oxygen.
Claim 4
Dependent Claim
39 words
The method of claim 1, where said base material is selected from the group consisting essentially of metals and semiconductors, and said reactive constituents are selected from the group consisting of oxygen, nitrogen, hydrogen, sulfur, H2S , and CH4.
Claim 5
Dependent Claim
49 words
The method of claim 1, where said first rate is dependent on the thickness of said grown reactive layer and said second rate is substantially independent of the thickness of said reactive layer, said first and seond rates tending to equalize as the thickness of said reactive layer changes.
Claim 6
Dependent Claim
51 words
The method of claim 1, wherein said reactive layer is initially present on said base material, and said second rate is initially greater than said first rate, said rates then varying relatively until a final thickness of said reactive layer is reached at which said first and second rates are equal.
Claim 7
Dependent Claim
15 words
The method of claim 1, where said reactive layer grows by a vapor deposition process.
Claim 8
Independent Claim
160 words
A method of forming reactive layers on base material, said layers having a thickness independent of time after a final thickness is achieved, said method comprising: placing said base material in a system having a cathode and an anode located in a chamber in which a vacuum can be established, said base material having the electrical potential of said cathode; introducing a reactive gas species into said chamber, said species being combined with said base material to grow said reactive layer thereon when a voltage is established between said cathode and said anode to provide a gaseous plasma between said cathode and said anode, said reactive layer being removed by the incidence of gaseous particles from said plasma as said growth occurs; adjusting the rate of gRowth of said layer and the rate of removal of said layer to establish a steady state equilibrium at which said rates are substantially equal, at the final desired thickness of said reactive layer.
Claim 9
Independent Claim
160 words
A method of forming reactive layers on base material, said layers having a thickness independent of time after a final thickness is achieved, said method comprising: placing said base material in a system having a cathode and an anode located in a chamber in which a vacuum can be established, said base material having the electrical potential of said cathode; introducing a reactive gas species into said chamber, said species being combined with said base material to grow said reactive layer thereon when a voltage is established between said cathode and said anode to provide a gaseous plasma between said cathode and said anode, said reactive layer being removed by the incidence of gaseous particles from said plasma as said growth occurs; adjusting the rate of gRowth of said layer and the rate of removal of said layer to establish a steady state equilibrium at which said rates are substantially equal, at the final desired thickness of said reactive layer.
Claim 10
Dependent Claim
39 words
The method of claim 7, where said base material is selected from the group consisting of metals and semiconductors, and said reactive species is selected from the group consisting of oxygen, nitrogen, hydrogen, sulfur, CH4, H2S, and combinations thereof.
Claim 11
Dependent Claim
18 words
The method of claim 7, where said base material is a metal and said reactive species is oxygen.
Claim 12
Dependent Claim
25 words
The method of claim 7, where a plurality of reactive species are introduced into said chamber, thereby resulting in a reactive layer of variable composition.
Claim 13
Dependent Claim
16 words
The method of claim 7, where an inert gas is also present in said gaseous plasma.
Claim 14
Dependent Claim
19 words
The method of claim 7, where said voltage is an RF voltage applied between said cathode and said anode.
Claim 15
Independent Claim
91 words
A method of producing films of controllable thickness on a substrate, comprising the steps of: depositing gaseous particles of film material on said substrate, said deposition occurring at a first rate; removing said film material from said substrate during said deposition, said removal occurring at a second rate which is independently adjustable with respect to said first rate; adjusting said first and second rates to provide steady state equilibrium conditions at which said rates will be equal; continuing said deposition and said removal at least until steady state equilibrium is attained.
Claim 16
Independent Claim
91 words
A method of producing films of controllable thickness on a substrate, comprising the steps of: depositing gaseous particles of film material on said substrate, said deposition occurring at a first rate; removing said film material from said substrate during said deposition, said removal occurring at a second rate which is independently adjustable with respect to said first rate; adjusting said first and second rates to provide steady state equilibrium conditions at which said rates will be equal; continuing said deposition and said removal at least until steady state equilibrium is attained.
Claim 17
Dependent Claim
18 words
The method of claim 13, wherein said first rate is dependent on the thickness of said deposited material.
Claim 18
Dependent Claim
24 words
The method of claim 13, including the further step of depositing a layer onto said film material after said steady state equilibrium is attained.
Claim 19
Dependent Claim
20 words
The method of claim 13, where said steady state equilibrium is attained at a film thickness less than about 100A.
Claim 20
Dependent Claim
13 words
The method of claim 13, where said removal occurs by a vapor process.
Claim 21
Independent Claim
172 words
A method of forming reactive layers on substrates, comprising the steps of: placing said substrate in a vacuum environment housing a cathode and an anode, said substrate being located on the surface of said cathode; introducing a gaseous ambient between said cathode and said anode, said ambient containing a species which reacts with said substrate to form reactive layers thereon; establishing a voltage between said cathode and said anode to create an energetic plasma about said substrate whereby said species from said plasma strikes said substrate to form a reactive layer thereon having a first growth rate, said reactive layer also being removed at a second rate by the incidence of particles from said plasma, the growth rate and the removal rate varying relatively to one another as the thickness of said reactive layer changes; adjusting said first and second rates to be equal at a desired final thickness of said reactive layer; continuing said growth and said removal at least until said first rate is substantially equal to said second rate.
Claim 22
Independent Claim
172 words
A method of forming reactive layers on substrates, comprising the steps of: placing said substrate in a vacuum environment housing a cathode and an anode, said substrate being located on the surface of said cathode; introducing a gaseous ambient between said cathode and said anode, said ambient containing a species which reacts with said substrate to form reactive layers thereon; establishing a voltage between said cathode and said anode to create an energetic plasma about said substrate whereby said species from said plasma strikes said substrate to form a reactive layer thereon having a first growth rate, said reactive layer also being removed at a second rate by the incidence of particles from said plasma, the growth rate and the removal rate varying relatively to one another as the thickness of said reactive layer changes; adjusting said first and second rates to be equal at a desired final thickness of said reactive layer; continuing said growth and said removal at least until said first rate is substantially equal to said second rate.
Claim 23
Dependent Claim
23 words
The method of claim 18, where said reactive layer formation occurs by oxidation and the removal of said reactive layer occurs by sputtering.
Claim 24
Dependent Claim
42 words
The method of claim 18, where said substrate is selected from the group consisting of metals and semiconductors, and said ambient includes a plurality of gaseous species, at least one of said species reacting with said substrate to form said reactive layer.
Claim 25
Dependent Claim
27 words
The method of claim 18, where said gaseous ambient contains at least one gaseous species selected from the group consisting of oxygen, nitrogen, sulfur, hydrogen, CH4and H2S.
Claim 26
Independent Claim
220 words
A method of forming a multi-layer structure comprising the steps of: placing a substrate in a vacuum environment containing a cathode and an anode, and a source of a first material; coating said substrate with said first material to form a base layer; introducing a gaseous ambieNt between said cathode and said anode, said ambient containing gaseous species which react with said base layer to form a reactive layer thereon; producing an energetic plasma about said base layer by applying a voltage between said cathode and said anode, said base layer being at said cathode potential, said gaseous species in said plasma striking said base layer and forming a reactive layer on said base layer at a first rate of formation, said reactive layer being removed by the incidence of particles from said plasma, said removal occurring as said reactive layer is being formed and at a second rate of removal; adjusting the relative rates of formation and removal to provide a steady state equilibrium at which said formation rate will be substantially equal to said removal rate; continuing said formation and said removal at least until said steady state equilibrium is achieved, at which time said reactive layer will have a desired final thickness; coating said reactive layer with an electrically conductive material to form a counter layer thereon.
Claim 27
Independent Claim
220 words
A method of forming a multi-layer structure comprising the steps of: placing a substrate in a vacuum environment containing a cathode and an anode, and a source of a first material; coating said substrate with said first material to form a base layer; introducing a gaseous ambieNt between said cathode and said anode, said ambient containing gaseous species which react with said base layer to form a reactive layer thereon; producing an energetic plasma about said base layer by applying a voltage between said cathode and said anode, said base layer being at said cathode potential, said gaseous species in said plasma striking said base layer and forming a reactive layer on said base layer at a first rate of formation, said reactive layer being removed by the incidence of particles from said plasma, said removal occurring as said reactive layer is being formed and at a second rate of removal; adjusting the relative rates of formation and removal to provide a steady state equilibrium at which said formation rate will be substantially equal to said removal rate; continuing said formation and said removal at least until said steady state equilibrium is achieved, at which time said reactive layer will have a desired final thickness; coating said reactive layer with an electrically conductive material to form a counter layer thereon.
Claim 28
Dependent Claim
22 words
The method of claim 22, wherein said base layer and said counter layer are metals and said reactive layer is an oxide.
Claim 29
Dependent Claim
23 words
The method of claim 22, wherein said voltage is an RF potential and said substrate and base layer are located on said cathode.
Claim 30
Dependent Claim
26 words
The method of claim 22, where said reactive gas species includes at least one of the group consisting of oxygen, nitrogen, hydrogen, sulfur, CH4, and H2S.
Claim 31
Independent Claim
129 words
A method for forming reactive layers of controlled thickness on base materials, said reactive layers being combinations of the base material and at least one constituent which reacts with said base material, comprising: bringing said reactive constituent to said base material for reaction thereon to grow said reactive layer at a first rate; removing said reactive layer by a sputtering process which occurs simultaneously with said growth, the removal of said reactive layer occurring at a second rate; adjusting said first and second rates to be equal for a desired final thickness of said reactive layer; continuing said growth and said removal at least until said first and second rates of growth and removal respectively are equal, at which time a final thickness of said reactive layer is achieved.
Claim 32
Independent Claim
129 words
A method for forming reactive layers of controlled thickness on base materials, said reactive layers being combinations of the base material and at least one constituent which reacts with said base material, comprising: bringing said reactive constituent to said base material for reaction thereon to grow said reactive layer at a first rate; removing said reactive layer by a sputtering process which occurs simultaneously with said growth, the removal of said reactive layer occurring at a second rate; adjusting said first and second rates to be equal for a desired final thickness of said reactive layer; continuing said growth and said removal at least until said first and second rates of growth and removal respectively are equal, at which time a final thickness of said reactive layer is achieved.
Claim 33
Independent Claim
95 words
A method of producing films of controllable thickness on a substrate, comprising the steps of: depositing particles of film material by oxidation on said substrate, said deposition occurring at a first rate; removing said film material from said substrate by sputtering during said deposition, said removal occurring at a second rate which is independently adjustable with respect to said first rate; adjusting said first and second rates to provide steady state equilibrium conditions at which said rates will be equal; continuing said deposition and said removal at least until said steady state equilibrium is attained.
Claim 34
Independent Claim
95 words
A method of producing films of controllable thickness on a substrate, comprising the steps of: depositing particles of film material by oxidation on said substrate, said deposition occurring at a first rate; removing said film material from said substrate by sputtering during said deposition, said removal occurring at a second rate which is independently adjustable with respect to said first rate; adjusting said first and second rates to provide steady state equilibrium conditions at which said rates will be equal; continuing said deposition and said removal at least until said steady state equilibrium is attained.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-18 | 1978-05-20 | 1978-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-18 | 1982-05-20 | 1982-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-18 | 1986-05-20 | 1986-11-19 | $7700.00 | Window Closed / Lapsed |