US6151240A
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Ferroelectric nonvolatile memory and oxide multi-layered structure
Assignee: Sony Corp
•
Filing: 1996-05-31
•
Granted: 2000-11-21
•
Expires: 2016-05-31
Abstract
Abstract A ferroelectric memory includes a silicon substrate having a buffer layer on the substrate and a conductive oxide thin film on the buffer layer. A bismuth based layered ferroelectric oxide thin film is formed on the conductive oxide and a further conductive layer is formed on the ferroelectric layer. In one embodiment, the buffer layer is substantially lattice matched with the silicon substrate, the conductive oxide thin film is substantially lattice matched with the buffer layer, and the bismuth-based layered ferroelectric oxide thin film is substantially lattice matched with the conductive oxide thin film. Additionally, the invention includes the use of a superlattice structure for the ferroelectric layer.
Inventors
- 👤 Masayuki Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/682; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/689; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 109
Claim 1
Independent Claim
159 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer comprised of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 ; a bismuth-based layered ferroelectric oxide thin film on said conductive oxide thin film; and a conductive layer on said bismuth-based layered ferroelectric oxide thin film, wherein said buffer layer is substantially lattice matched with said silicon substrate, said conductive oxide thin film is substantially lattice matched with said buffer layer, and said bismuth-based layered ferroelectric oxide thin film is substantially lattice matched with said conductive oxide thin film, wherein said buffer layer, said conductive oxide thin film and said bismuth-based layered ferroelectric oxide thin film are epitaxially grown on said silicon substrate.
Claim 2
Dependent Claim
159 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer comprised of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 ; a bismuth-based layered ferroelectric oxide thin film on said conductive oxide thin film; and a conductive layer on said bismuth-based layered ferroelectric oxide thin film, wherein said buffer layer is substantially lattice matched with said silicon substrate, said conductive oxide thin film is substantially lattice matched with said buffer layer, and said bismuth-based layered ferroelectric oxide thin film is substantially lattice matched with said conductive oxide thin film, wherein said buffer layer, said conductive oxide thin film and said bismuth-based layered ferroelectric oxide thin film are epitaxially grown on said silicon substrate.
Claim 3
Dependent Claim
19 words
The ferroelectric nonvolatile memory according to claim 1, wherein said conductive oxide thin film has a perovskite crystal structure.
Claim 4
Dependent Claim
20 words
The ferroelectric nonvolatile memory according to claim 2, wherein said conductive oxide thin film is made of SrRuO 3 .
Claim 5
Dependent Claim
20 words
The ferroelectric nonvolatile memory according to claim 1, wherein said conductive oxide thin film has a layered perovskite crystal structure.
Claim 6
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 4, wherein said conductive oxide thin film is made of Sr 2 RuO 4 .
Claim 7
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 1, wherein said conductive oxide thin film is made of a high temperature superconducting oxide.
Claim 8
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 6, wherein said conductive oxide thin film is made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 9
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 2, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 10
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 4, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 11
Dependent Claim
37 words
The ferroelectric nonvolatile memory according to claim 8, wherein said silicon substrate, said buffer layer and said conductive oxide thin film have (110) plane orientation, and said bismuth-based layered ferroelectric oxide thin film has (100) plane orientation.
Claim 12
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 2, wherein said buffer layer is made of cerium oxide.
Claim 13
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 4, wherein said buffer layer is made of cerium oxide.
Claim 14
Dependent Claim
48 words
The ferroelectric nonvolatile memory according to claim 9, wherein said silicon substrate has (100) or (111) plane orientation, said buffer layer has (110) or (111) plane orientation, said conductive oxide thin film has (110) plane orientation, and said bismuth-based layered ferroelectric oxide thin film has (100) plane orientation.
Claim 15
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 1, wherein said conductive layer is a conductive oxide thin film.
Claim 16
Dependent Claim
23 words
The ferroelectric nonvolatile memory according to claim 14, wherein said conductive oxide thin film constituting the conductive layer has a perovskite crystal structure.
Claim 17
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 15, wherein said conductive oxide thin film constituting the conductive layer is made of SrRuO 3 .
Claim 18
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 14, wherein said conductive oxide thin film constituting the conductive layer has a layered perovskite crystal structure.
Claim 19
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 17, wherein said conductive oxide thin film constituting the conductive layer is made of Sr 2 RuO 4 .
Claim 20
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 14, wherein said conductive oxide thin film constituting the conductive layer is made of a high temperature superconducting oxide.
Claim 21
Dependent Claim
30 words
The ferroelectric nonvolatile memory according to claim 19, wherein said conductive oxide thin film constituting the conductive layer is made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 22
Dependent Claim
112 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 ; an oxide superlattice including at least a ferroelectric oxide thin film on said conductive oxide thin film; and a conductive layer on said oxide superlattice, wherein said buffer layer, said conductive oxide thin film and said oxide superlattice are epitaxially grown on said silicon substrate.
Claim 23
Dependent Claim
112 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 ; an oxide superlattice including at least a ferroelectric oxide thin film on said conductive oxide thin film; and a conductive layer on said oxide superlattice, wherein said buffer layer, said conductive oxide thin film and said oxide superlattice are epitaxially grown on said silicon substrate.
Claim 24
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 21, wherein said oxide superlattice comprises a first ferroelectric oxide thin film and a second ferroelectric oxide thin film.
Claim 25
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 21, wherein said oxide superlattice comprises a ferroelectric oxide thin film and a paraelectric oxide thin film.
Claim 26
Dependent Claim
19 words
The ferroelectric nonvolatile memory according to claim 21, wherein said ferroelectric oxide thin film has a perovskite crystal structure.
Claim 27
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 21, wherein said ferroelectric oxide thin film is a bismuth-based layered ferroelectric oxide thin film.
Claim 28
Dependent Claim
69 words
The ferroelectric nonvolatile memory according to claim 21, wherein said oxide superlattice has a structure in which artificial crystal including at least a Me--Re--O atomic layer (where Me═Ba, Pb, Sr or Ca, Re═Ti, Zr, Sn, Hf, Ce, Bi, Pb, Nb or Ta) as an intermediate atomic layer inserted between a first Bi--O atomic layer and a second Bi--O atomic layer forms one unit crystal layer in the thickness direction.
Claim 29
Dependent Claim
50 words
The ferroelectric nonvolatile memory according to claim 21, wherein said buffer layer is in substantial lattice matching with said silicon substrate, said conductive oxide thin film is in substantial lattice matching with said buffer layer, and said oxide superlattice is in substantial lattice matching with said conductive oxide thin film.
Claim 30
Dependent Claim
19 words
The ferroelectric nonvolatile memory according to claim 21, wherein said conductive oxide thin film has a perovskite crystal structure.
Claim 31
Dependent Claim
20 words
The ferroelectric nonvolatile memory according to claim 28, wherein said conductive oxide thin film is made of SrRuO 3 .
Claim 32
Dependent Claim
20 words
The ferroelectric nonvolatile memory according to claim 21, wherein said conductive oxide thin film has a layered perovskite crystal structure.
Claim 33
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 30, wherein said conductive oxide thin film is made of Sr 2 RuO 4 .
Claim 34
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 21, wherein said conductive oxide thin film is made of a high temperature superconducting oxide.
Claim 35
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 32, wherein said conductive oxide thin film is made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 36
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 28, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 37
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 34, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 38
Dependent Claim
25 words
The ferroelectric nonvolatile memory according to claim 34, wherein said silicon substrate, said buffer layer and said conductive oxide thin film have (100) plane orientation.
Claim 39
Dependent Claim
30 words
The ferroelectric nonvolatile memory according to claim 35, wherein said silicon substrate and said buffer layer have (100) plane orientation, and said conductive oxide thin film has (001) plane orientation.
Claim 40
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 36, wherein said oxide superlattice has a perovskite crystal structure, and said oxide thin film has (001) plane orientation.
Claim 41
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 37, wherein said oxide superlattice has a perovskite crystal structure, and said oxide thin film has (001) plane orientation.
Claim 42
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 36, wherein said oxide superlattice includes a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 43
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 37, wherein said oxide superlattice includes a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 44
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 28, wherein said buffer layer is made of cerium oxide.
Claim 45
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 30, wherein said buffer layer is made of cerium oxide.
Claim 46
Dependent Claim
33 words
The ferroelectric nonvolatile memory according to claim 42, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, and said conductive oxide thin film has (100) plane orientation.
Claim 47
Dependent Claim
33 words
The ferroelectric nonvolatile memory according to claim 43, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, and said conductive oxide thin film has (001) plane orientation.
Claim 48
Dependent Claim
31 words
The ferroelectric nonvolatile memory according to claim 44, wherein said oxide superlattice is an oxide thin film having a perovskite crystal structure, and said oxide thin film has (001) plane orientation.
Claim 49
Dependent Claim
31 words
The ferroelectric nonvolatile memory according to claim 45, wherein said oxide superlattice is an oxide thin film having a perovskite crystal structure, and said oxide thin film has (001) plane orientation.
Claim 50
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 44, wherein said oxide superlattice includes a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 51
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 45, wherein said oxide superlattice includes a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 52
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 21, wherein said conductive layer is a conductive oxide thin film.
Claim 53
Dependent Claim
27 words
The ferroelectric nonvolatile memory according to claim 50, wherein said conductive oxide thin film constituting the conductive layer is in substantial lattice matching with said oxide superlattice.
Claim 54
Dependent Claim
23 words
The ferroelectric nonvolatile memory according to claim 50, wherein said conductive oxide thin film constituting the conductive layer has a perovskite crystal structure.
Claim 55
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 52, wherein said conductive oxide thin film constituting the conductive layer is made of SrRuO 3 .
Claim 56
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 50, wherein said conductive oxide thin film constituting the conductive layer has a layered perovskite crystal structure.
Claim 57
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 54, wherein said conductive oxide thin film constituting the conductive layer is made of Sr 2 RuO 4 .
Claim 58
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 50, wherein said conductive oxide thin film constituting the conductive layer is made of a high temperature superconducting oxide.
Claim 59
Dependent Claim
30 words
The ferroelectric nonvolatile memory according to claim 56, wherein said conductive oxide thin film constituting the conductive layer is made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 60
Dependent Claim
138 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a bismuth-based layered ferroelectric oxide thin film on said buffer layer; and a first conductive oxide thin film and a second conductive oxide thin film on said buffer layer at opposite sides of said bismuth-based layered ferroelectric oxide thin film and in contact with sidewalls of said bismuth-based layered ferroelectric oxide thin film, wherein said buffer layer, said bismuth-based layered ferroelectric oxide thin film and said first and second conductive oxide thin films are epitaxially grown on said silicon substrate, said conductive oxide thin films selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
Claim 61
Dependent Claim
138 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; a bismuth-based layered ferroelectric oxide thin film on said buffer layer; and a first conductive oxide thin film and a second conductive oxide thin film on said buffer layer at opposite sides of said bismuth-based layered ferroelectric oxide thin film and in contact with sidewalls of said bismuth-based layered ferroelectric oxide thin film, wherein said buffer layer, said bismuth-based layered ferroelectric oxide thin film and said first and second conductive oxide thin films are epitaxially grown on said silicon substrate, said conductive oxide thin films selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
Claim 62
Dependent Claim
55 words
The ferroelectric nonvolatile memory according to claim 58, wherein said buffer layer is in substantial lattice matching with said silicon substrate, said bismuth-based layered ferroelectric oxide thin film is in substantial lattice matching with said buffer layer, and said first and second conductive oxide thin films are in substantial lattice matching with said buffer layer.
Claim 63
Dependent Claim
27 words
The ferroelectric nonvolatile memory according to claim 58, wherein said first conductive oxide thin film and said second conductive oxide thin film have a perovskite crystal structure.
Claim 64
Dependent Claim
27 words
The ferroelectric nonvolatile memory according to claims, wherein said first conductive oxide thin film and said second conductive oxide thin film are made of SrRuO 3 .
Claim 65
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 58, wherein said first conductive oxide thin film and said second conductive oxide thin film have a layered perovskite crystal structure.
Claim 66
Dependent Claim
30 words
The ferroelectric nonvolatile memory according to claim 62, wherein said first conductive oxide thin film and said second conductive oxide thin film are made of Sr 2 RuO 4 .
Claim 67
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 58, wherein said conductive oxide thin films are made of a high temperature superconducting oxide.
Claim 68
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 64, wherein said conductive oxide thin films are made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 69
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 60, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 70
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 62, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 71
Dependent Claim
44 words
The ferroelectric nonvolatile memory according to claim 66, wherein said silicon substrate, said buffer layer, said first conductive oxide thin film and said second conductive oxide thin film have (100) plane orientation, and said bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 72
Dependent Claim
45 words
The ferroelectric nonvolatile memory according to claim 67, wherein said silicon substrate and said buffer layer have (100) plane orientation, and said bismuth-based layered ferroelectric oxide thin film, said first conductive oxide thin film and said second conductive oxide thin film have (001) plane orientation.
Claim 73
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 60, wherein said buffer layer is made of cerium oxide.
Claim 74
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 62, wherein said buffer layer is made of cerium oxide.
Claim 75
Dependent Claim
52 words
The ferroelectric nonvolatile memory according to claim 70, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, said bismuth-based layered ferroelectric oxide thin film has (001) plane orientation, and said first conductive oxide thin film and said second conductive oxide thin film have (100) plane orientation.
Claim 76
Dependent Claim
48 words
The ferroelectric nonvolatile memory according to claim 71, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, and said bismuth-based layered ferroelectric oxide thin film, said first conductive oxide thin film and said second conductive oxide thin film have (001) plane orientation.
Claim 77
Dependent Claim
36 words
The ferroelectric nonvolatile memory according to claim 58, further comprising an insulating cap layer lying over said bismuth-based layered ferroelectric oxide thin film, said first conductive oxide thin film and said second conductive oxide thin film.
Claim 78
Dependent Claim
134 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; an oxide superlattice including at least a ferroelectric oxide thin film on said buffer layer; and a first conductive oxide thin film and a second conductive oxide thin film on said buffer layer at opposite sides of said oxide superlattice and in contact with sidewalls of said oxide superlattice, wherein said buffer layer, said oxide superlattice, said first conductive oxide thin film and said second conductive oxide thin film are epitaxially grown on said silicon substrate, said conductive oxide thin films selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
Claim 79
Dependent Claim
134 words
A ferroelectric nonvolatile memory comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of magnesium oxide, cerium oxide, α-alumina, yttrium stabilized zirconia and magnesium aluminate spinel; an oxide superlattice including at least a ferroelectric oxide thin film on said buffer layer; and a first conductive oxide thin film and a second conductive oxide thin film on said buffer layer at opposite sides of said oxide superlattice and in contact with sidewalls of said oxide superlattice, wherein said buffer layer, said oxide superlattice, said first conductive oxide thin film and said second conductive oxide thin film are epitaxially grown on said silicon substrate, said conductive oxide thin films selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
Claim 80
Dependent Claim
24 words
The ferroelectric nonvolatile memory according to claim 75, wherein said oxide superlattice comprises a ferroelectric oxide thin film and a paraelectric oxide thin film.
Claim 81
Dependent Claim
19 words
The ferroelectric nonvolatile memory according to claim 75, wherein said ferroelectric oxide thin film has a perovskite crystal structure.
Claim 82
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 75, wherein said ferroelectric oxide thin film is a bismuth layered ferroelectric oxide thin film.
Claim 83
Dependent Claim
69 words
The ferroelectric nonvolatile memory according to claim 75, wherein said oxide superlattice has a structure in which artificial crystal including at least a Me--Re--O atomic layer (where Me═Ba, Pb, Sr or Ca, Re═Ti, Zr, Sn, Hf, Ce, Bi, Pb, Nb or Ta) as an intermediate atomic layer inserted between a first Bi--O atomic layer and a second Bi--O atomic layer forms one unit crystal layer in the thickness direction.
Claim 84
Dependent Claim
51 words
The ferroelectric nonvolatile memory according to claim 75, wherein said buffer layer is in substantial lattice matching with said silicon substrate, said oxide superlattice is in substantial lattice matching with said buffer layer, and said first and second conductive oxide thin films are in substantial lattice matching with said buffer layer.
Claim 85
Dependent Claim
27 words
The ferroelectric nonvolatile memory according to claim 75, wherein said first conductive oxide thin film and said second conductive oxide thin film have a perovskite crystal structure.
Claim 86
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 81, wherein said first conductive oxide thin film and said second conductive oxide thin film are made of SrRuO 3 .
Claim 87
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 75, wherein said first conductive oxide thin film and said second conductive oxide thin film have a layered perovskite crystal structure.
Claim 88
Dependent Claim
29 words
The ferroelectric nonvolatile memory according to claim 83, wherein said first conductive oxide thin film and said second conductive oxide thin film are made of Sr RuO 4 .
Claim 89
Dependent Claim
22 words
The ferroelectric nonvolatile memory according to claim 75, wherein said conductive oxide thin films are made of a high temperature superconducting oxide.
Claim 90
Dependent Claim
26 words
The ferroelectric nonvolatile memory according to claim 85, wherein said conductive oxide thin films are made of (Nd 1-x Ce x ) 2 CuO 4- δ.
Claim 91
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 81, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 92
Dependent Claim
18 words
The ferroelectric nonvolatile memory according to claim 83, wherein said buffer layer is made of magnesium aluminum spinel.
Claim 93
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 87, wherein said silicon substrate, said buffer layer, said first conductive oxide thin film and said second conductive oxide thin film have (100) plane orientation.
Claim 94
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 89, wherein said ferroelectric oxide thin film constituting the oxide superlattice has a perovskite crystal structure and has (100) plane orientation.
Claim 95
Dependent Claim
38 words
The ferroelectric nonvolatile memory according to claim 89, wherein said ferroelectric oxide thin film constituting the oxide superlattice is a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 96
Dependent Claim
37 words
The ferroelectric nonvolatile memory according to claim 88, wherein said silicon substrate and said buffer layer have (100) plane orientation, and said first conductive oxide film and said second conductive oxide thin film have (001) plane orientation.
Claim 97
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 92, wherein said ferroelectric oxide thin film constituting the oxide superlattice has a perovskite crystal structure and has (001) plane orientation.
Claim 98
Dependent Claim
38 words
The ferroelectric nonvolatile memory according to claim 92, wherein said ferroelectric oxide thin film constituting the oxide superlattice is a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 99
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 81, wherein said buffer layer is made of cerium oxide.
Claim 100
Dependent Claim
17 words
The ferroelectric nonvolatile memory according to claim 83, wherein said buffer layer is made of cerium oxide.
Claim 101
Dependent Claim
41 words
The ferroelectric nonvolatile memory according to claim 95, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, and said first conductive oxide thin film and said second conductive oxide thin film have (100) plane orientation.
Claim 102
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 97, wherein said ferroelectric oxide thin film constituting the oxide superlattice has a perovskite crystal structure and has (001) plane orientation.
Claim 103
Dependent Claim
38 words
The ferroelectric nonvolatile memory according to claim 97, wherein said ferroelectric oxide thin film constituting the oxide superlattice is a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 104
Dependent Claim
36 words
The ferroelectric nonvolatile memory according to claim 96, wherein said silicon substrate has (100) plane orientation, said buffer layer has (110) plane orientation, and said first and second conductive oxide thin films have (001) plane orientation.
Claim 105
Dependent Claim
28 words
The ferroelectric nonvolatile memory according to claim 98, wherein said ferroelectric oxide thin film constituting the oxide superlattice has a perovskite crystal structure and has (001) plane orientation.
Claim 106
Dependent Claim
38 words
The ferroelectric nonvolatile memory according to claim 98, wherein said ferroelectric oxide thin film constituting the oxide superlattice is a bismuth-based layered ferroelectric oxide thin film, and the bismuth-based layered ferroelectric oxide thin film has (001) plane orientation.
Claim 107
Dependent Claim
32 words
The ferroelectric nonvolatile memory according to claim 75, further comprising an insulating cap layer lying over said oxide superlattice, said first conductive oxide thin film and said second conductive oxide thin film.
Claim 108
Dependent Claim
62 words
An oxide multi-layered structure comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of cerium oxide and magnesium aluminate spinel; and a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
Claim 109
Dependent Claim
62 words
An oxide multi-layered structure comprising: a silicon substrate; a buffer layer made of an oxide on said silicon substrate, said oxide selected from the group consisting of cerium oxide and magnesium aluminate spinel; and a conductive oxide thin film on said buffer layer, said conductive oxide thin film selected from the group consisting of SrRuO 3 and Sr 2 RuO 4 .
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