US6208030B1
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Semiconductor device having a low dielectric constant material
Assignee: GlobalFoundries Inc
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Filing: 1998-10-27
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Granted: 2001-03-27
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Expires: 2018-10-27
Abstract
Abstract A semiconductor device having a reduced resistance-capacitance time constant is formed by treating a dielectric layer to reduce its dielectric constant. Embodiments include exposing a deposited dielectric layer to ionic radiation, as with Helium ion implantation, to form voids within the layer, thereby reducing its dielectric constant.
Inventors
- 👤 Ting Y. Tsui
- 👤 Ercan Adem
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/495
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
104 words
A semiconductor device comprising: a first conductive layer; a dielectric layer having a dielectric constant on the first conductive layer; and a second conductive layer on the dielectric layer, wherein the dielectric layer contains voids having a diameter of about 100 Å to about 1,000 Å substantially throughout the dielectric layer, thereby lowering the dielectric constant of the dielectric layer, wherein the dielectric layer comprises a silicon oxide layer, wherein the silicon oxide layer contains implanted atoms selected from the group consisting of helium, neon, argon, krypton, xenon, deuterium and hydrogen ions, and wherein the silicon oxide layer has a porosity of about 15%.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising: a first conductive layer; a dielectric layer having a dielectric constant on the first conductive layer; and a second conductive layer on the dielectric layer, wherein the dielectric layer contains voids having a diameter of about 100 Å to about 1,000 Å substantially throughout the dielectric layer, thereby lowering the dielectric constant of the dielectric layer, wherein the dielectric layer comprises a silicon oxide layer, wherein the silicon oxide layer contains implanted atoms selected from the group consisting of helium, neon, argon, krypton, xenon, deuterium and hydrogen ions, and wherein the silicon oxide layer has a porosity of about 15%.
Claim 3
Dependent Claim
21 words
The semiconductor device of claim 1 , wherein the dielectric constant of the dielectric layer is no greater than about 3.9.
Claim 4
Dependent Claim
26 words
The semiconductor device of claim 1 , wherein the first conductive layer is over a single crystal silicon substrate having at least one active device region.
Claim 5
Dependent Claim
40 words
The semiconductor device of claim 1 , wherein the first conductive layer comprises a metal, the dielectric layer is directly on the first conductive layer and the second conductive layer comprises a metal and is directly on the dielectric layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-26 | 2004-09-25 | 2005-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-26 | 2008-09-25 | 2009-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-26 | 2012-09-25 | 2013-03-27 | $7700.00 | Window Closed / Lapsed |