US6613656B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sequential pulse deposition
Assignee: Mosaid Technologies Inc
•
Filing: 2001-02-13
•
Granted: 2003-09-02
•
Expires: 2021-02-13
Abstract
Abstract A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.
Inventors
- 👤 Weimin Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:10
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/4401; C23C16/4408; C23C16/52; H; H10; H10P; H10P14/00; H10P14/40
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
95 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs after stopping the flow of the precursor gas; and wherein flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding steps.
Claim 2
Independent Claim
95 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs after stopping the flow of the precursor gas; and wherein flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding steps.
Claim 3
Dependent Claim
42 words
The method according to claim 1 , wherein, if necessary, the above process is repeated until the film has a desired thickness; and flowing precursor gas into the chamber occurs after stopping precursor gas flow into the chamber while repeating the steps.
Claim 4
Dependent Claim
16 words
The method according to claim 1 , wherein the steps are performed in the listed order.
Claim 5
Independent Claim
88 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs after stopping the flow of the precursor gas; and wherein reacting the precursor with the reactant forms a layer on the substrate at a rate greater than 100 Å/cycle.
Claim 6
Independent Claim
88 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs after stopping the flow of the precursor gas; and wherein reacting the precursor with the reactant forms a layer on the substrate at a rate greater than 100 Å/cycle.
Claim 7
Independent Claim
53 words
A method of forming a film on substrate, comprising: flowing a PT and Rh precursor gases into a reaction chamber containing the substrate; flowing a N 2 O gas into the reaction chamber; and wherein the Pt and Rh precursor gases and the N 2 O gas are sequentially pulsed into the chamber.
Claim 8
Independent Claim
53 words
A method of forming a film on substrate, comprising: flowing a PT and Rh precursor gases into a reaction chamber containing the substrate; flowing a N 2 O gas into the reaction chamber; and wherein the Pt and Rh precursor gases and the N 2 O gas are sequentially pulsed into the chamber.
Claim 9
Dependent Claim
83 words
The method according to claim 5 , wherein, if necessary, the above process is repeated until the film has a desired thickness, flowing N 2 O gas into the chamber occurs after stopping Pt and Rh precursor gas flows into the chamber while repeating the process, and flowing the Pt and Rh precursor gases and flowing the N 2 O gas are performed without completely purging the remaining N 2 O gas and the Pt and Rh precursor gases from the preceding process.
Claim 10
Dependent Claim
32 words
The method according to claim 5 , further comprising flowing an inert purge gas into the chamber in between flowing the Pt and Rh precursor gases and the N 2 O gas.
Claim 11
Independent Claim
100 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein flowing precursor gas includes saturating precursor near the surface of the substrate so that steps in the substrate are generally covered by precursor; and wherein flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding flowing steps.
Claim 12
Independent Claim
100 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein flowing precursor gas includes saturating precursor near the surface of the substrate so that steps in the substrate are generally covered by precursor; and wherein flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding flowing steps.
Claim 13
Dependent Claim
35 words
The method according to claim 8 , wherein CVD chemistry occurs near the surface of the substrate to deposit the film on the substrate and reduce gas phase interaction of the precursor and the reactant.
Claim 14
Dependent Claim
32 words
The method according to claim 8 , wherein flowing the precursor gas uniformly covers the steps in the substrate such that precursor material is adjacent essentially the entire surface of the step.
Claim 15
Independent Claim
87 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; and wherein the precursor and the reactant react to grow a film a rate of at least 10 Å/cycle.
Claim 16
Independent Claim
87 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; and wherein the precursor and the reactant react to grow a film a rate of at least 10 Å/cycle.
Claim 17
Dependent Claim
21 words
The method according to claim 11 , wherein heating the chamber includes heating the chamber to at least 100 degrees (C.).
Claim 18
Dependent Claim
21 words
The method according to claim 11 , wherein heating the chamber includes heating the chamber to at least 200 degrees (C.).
Claim 19
Dependent Claim
21 words
The method according to claim 11 , wherein heating the chamber includes heating the chamber to at least 300 degrees (C.).
Claim 20
Independent Claim
101 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein heating the chamber includes heating the chamber to at least 100 degrees (C.); and wherein the precursor and the reactant react to grow a film a rate of at least 10 Å/cycle.
Claim 21
Independent Claim
101 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein heating the chamber includes heating the chamber to at least 100 degrees (C.); and wherein the precursor and the reactant react to grow a film a rate of at least 10 Å/cycle.
Claim 22
Independent Claim
91 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; stopping flow of the precursor gas; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor gas contains Pt and Rh precursors and the reactant gas contains N2O.
Claim 23
Independent Claim
91 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; stopping flow of the precursor gas; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit a layer of the film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor gas contains Pt and Rh precursors and the reactant gas contains N2O.
Claim 24
Dependent Claim
43 words
The method according to claim 16 , wherein, if necessary to grow the film to a desired thickness, the above process steps are repeated, and flowing precursor gas into the chamber occurs simultaneously with stopping reactant gas flow when repeating the process steps.
Claim 25
Dependent Claim
20 words
The method according to claim 16 , wherein purge gas flows while flowing the precursor gas and the reactant gas.
Claim 26
Dependent Claim
31 words
The method according to claim 16 , wherein flowing precursor gas includes saturating the precursor near the surface of the substrate so that steps in the substrate are covered by precursor.
Claim 27
Dependent Claim
48 words
The method according to claim 19 , wherein saturating the precursor near the surface of the substrate includes CVD chemistry occurring predominantly near the surface of the substrate to deposit the layer on the substrate in order to reduce gas phase interaction of the precursor and the reactant.
Claim 28
Dependent Claim
18 words
The method according to claim 16 , wherein flowing the purge gas maintains an essentially constant chamber pressure.
Claim 29
Independent Claim
60 words
A method of forming a film on a substrate, comprising: flowing Pt and Rh gases into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein flowing the reactant gas occurs essentially simultaneously with stopping the flow of the Pt and Rh gases; and wherein the reactant gas is one of N2O, O2, and H2.
Claim 30
Independent Claim
60 words
A method of forming a film on a substrate, comprising: flowing Pt and Rh gases into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein flowing the reactant gas occurs essentially simultaneously with stopping the flow of the Pt and Rh gases; and wherein the reactant gas is one of N2O, O2, and H2.
Claim 31
Dependent Claim
43 words
The method according to claim 22 , wherein, if necessary, the above process is repeated until the film has a desired thickness, flowing Pt and Rh gases into the chamber occurs after stopping reactant gas flow into the chamber while repeating the process.
Claim 32
Dependent Claim
28 words
The method according to claim 22 , further comprising flowing an inert purge gas into the chamber while flowing the Pt and Rh gases and the reactant gas.
Claim 33
Independent Claim
155 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; stopping flow of the precursor gas; flowing a reactant gas into the reaction chamber; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor includes at least one of a metal selected from the group consisting of rhenium ruthenium, rhodium, palladium, silver, osmium, iridium, platinum and gold; wherein saturating the precursor near the surface of the substrate includes CVD chemistry occurring predominantly near the surface of the substrate to deposit the film on the substrate and reduce gas phase interaction of the precursor and the reactant; and wherein the above steps are repeated, and flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding flowing steps.
Claim 34
Independent Claim
155 words
A method of forming a film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate; stopping flow of the precursor gas; flowing a reactant gas into the reaction chamber; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor includes at least one of a metal selected from the group consisting of rhenium ruthenium, rhodium, palladium, silver, osmium, iridium, platinum and gold; wherein saturating the precursor near the surface of the substrate includes CVD chemistry occurring predominantly near the surface of the substrate to deposit the film on the substrate and reduce gas phase interaction of the precursor and the reactant; and wherein the above steps are repeated, and flowing the precursor gas and flowing the reactant gas are performed without completely purging the remaining reactant gas and the precursor gas from the preceding flowing steps.
Claim 35
Independent Claim
92 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor and the reactant react to grow a film a rate of at least 5 Å/cycle.
Claim 36
Independent Claim
92 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; and wherein the precursor and the reactant react to grow a film a rate of at least 5 Å/cycle.
Claim 37
Dependent Claim
18 words
The method according to claim 26 , wherein the chamber is heated to at least 300 degrees (C.).
Claim 38
Independent Claim
103 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; wherein the chamber is heated to at least 300 degrees (C.); and wherein the precursor and the reactant react to grow a film a rate of at least 5 Å/cycle.
Claim 39
Independent Claim
103 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; heating the chamber to facilitate the chemical reaction of the precursor and the reactant to deposit a film on the substrate; wherein flowing the reactant gas into the chamber occurs essentially simultaneously with stopping the flow of the precursor gas; wherein the chamber is heated to at least 300 degrees (C.); and wherein the precursor and the reactant react to grow a film a rate of at least 5 Å/cycle.
Claim 40
Independent Claim
111 words
A method of forming a metal or dielectric film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate so that the precursor gas is adjacent the substrate, the precursor gas containing one of platinum, rhodium and a dielectric to be deposited on the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit multiple atomic layers of the film during each reacting step; repeating the above steps until the film has a desired thickness; and the flowing of the reactant gas into the chamber occurs after stopping the flow of the precursor gas.
Claim 41
Independent Claim
111 words
A method of forming a metal or dielectric film on a substrate, comprising: flowing a precursor gas into a reaction chamber containing the substrate so that the precursor gas is adjacent the substrate, the precursor gas containing one of platinum, rhodium and a dielectric to be deposited on the substrate; flowing a reactant gas into the reaction chamber; reacting the precursor gas with the reaction gas adjacent the substrate to deposit multiple atomic layers of the film during each reacting step; repeating the above steps until the film has a desired thickness; and the flowing of the reactant gas into the chamber occurs after stopping the flow of the precursor gas.
Claim 42
Independent Claim
136 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein the amount of at least one of the precursor gas and the reactant gas exceeds the amount required to form the film on the substrate; wherein flowing the byproduct gases includes flowing the excess one of the precursor gas and the reactant gas from the reaction chamber; and wherein flowing the precursor, flowing the reactant, and flowing the byproduct gas together include growing the film at a rate greater than about 5 Å per each cycle of flowing the precursor, flowing the reactant, and flowing the byproduct gas.
Claim 43
Independent Claim
136 words
A method of forming a film on a substrate, comprising: flowing a precursor gas containing platinum and rhodium into a reaction chamber containing the substrate; flowing a reactant gas into the reaction chamber; wherein the precursor gas and the reactant gas are sequentially pulsed into the chamber; wherein the amount of at least one of the precursor gas and the reactant gas exceeds the amount required to form the film on the substrate; wherein flowing the byproduct gases includes flowing the excess one of the precursor gas and the reactant gas from the reaction chamber; and wherein flowing the precursor, flowing the reactant, and flowing the byproduct gas together include growing the film at a rate greater than about 5 Å per each cycle of flowing the precursor, flowing the reactant, and flowing the byproduct gas.
Claim 44
Dependent Claim
33 words
The method according to claim 30 , wherein flowing the precursor gas includes reacting the precursor and reactant gases together to form the film, and thereafter flowing byproduct gas from the reaction chamber.
Claim 45
Dependent Claim
25 words
The method according to claim 30 , wherein growing the film includes growing the film at a rate of about 100 Å per each cycle.
Claim 46
Dependent Claim
32 words
The method according to claim 30 , wherein flowing the precursor gas into a reaction chamber containing the substrate includes flowing a precursor gas containing a metal component into the reaction chamber.
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