US5382550A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing SiO2 on a semiconductor substrate
Assignee: Micron Technology Inc
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Filing: 1993-08-05
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Granted: 1995-01-17
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Expires: 2013-08-05
Abstract
Abstract A deposition method of reducing fixed charge in a layer of silicon dioxide includes: a) providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; b) providing an oxidizing gas to the reactor for reaction with the organosilicon compound; c) feeding a gaseous hydrogen containing source to the reactor; and d) reacting the organosilicon compound, oxidizing gas and gaseous hydrogen containing source to deposit a layer of silicon dioxide on the wafer, the hydrogen containing source gas effectively reacting with the organosilicon compound to produce reduced fixed charge in the deposited silicon dioxide layer over that which would be present if no hydrogen containing source gas were fed to the reactor under otherwise identical reacting conditions. Another method of depositing a layer of silicon dioxide on a semiconductor wafer comprises: a) providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; and b) providing an oxidizing gas to the reactor, and reacting the oxidizing gas with the gaseous organosilicon compound in the reactor to deposit a layer of silicon dioxide on the wafer, the oxidizing gas comprising a compound having an N--O bond.
Inventors
- 👤 Ravi Iyer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
128 words
A deposition method of reducing fixed charge in a layer of silicon dioxide comprising the following steps: providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; providing an oxidizing gas to the reactor for reaction with the organosilicon compound; feeding a gaseous hydrogen containing source to the reactor; and reacting the organosilicon compound, oxidizing gas and gaseous hydrogen containing source to deposit a layer of silicon dioxide on the wafer, wherein the hydrogen containing source gas produces hydrogen radicals that are effectively reacting with the organosilicon compound to produce reduced fixed charge in the deposited silicon dioxide layer over that which would be present if no hydrogen containing source gas were fed to the reactor under otherwise identical reacting conditions.
Claim 2
Dependent Claim
128 words
A deposition method of reducing fixed charge in a layer of silicon dioxide comprising the following steps: providing a gaseous organosilicon compound to a chemical vapor deposition reactor having a semiconductor wafer positioned therein; providing an oxidizing gas to the reactor for reaction with the organosilicon compound; feeding a gaseous hydrogen containing source to the reactor; and reacting the organosilicon compound, oxidizing gas and gaseous hydrogen containing source to deposit a layer of silicon dioxide on the wafer, wherein the hydrogen containing source gas produces hydrogen radicals that are effectively reacting with the organosilicon compound to produce reduced fixed charge in the deposited silicon dioxide layer over that which would be present if no hydrogen containing source gas were fed to the reactor under otherwise identical reacting conditions.
Claim 3
Dependent Claim
28 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the oxidizing gas comprises an inorganic compound having an N--O bond.
Claim 4
Dependent Claim
38 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 2 wherein the oxidizing gas is selected from the group consisting of NO, N 2 O and NO 2 , or mixtures thereof.
Claim 5
Dependent Claim
26 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the oxidizing gas consists essentially of N 2 O.
Claim 6
Dependent Claim
22 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS.
Claim 7
Dependent Claim
24 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises ditertiary butyl silane.
Claim 8
Dependent Claim
26 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the gaseous hydrogen containing source comprises H 2 .
Claim 9
Dependent Claim
26 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the gaseous hydrogen containing source comprises SiH 4 .
Claim 10
Dependent Claim
52 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 further comprising providing a gaseous boron or gaseous phosphorus source to the reactor, and reacting such gaseous boron or gaseous phosphorus to dope the deposited SiO 2 layer with at least one of boron or phosphorus.
Claim 11
Dependent Claim
34 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS, and the oxidizing gas comprises an inorganic compound having an N--O bond.
Claim 12
Dependent Claim
44 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS, and the oxidizing gas is selected from the group consisting of NO, N 2 O and NO 2 , or mixtures thereof.
Claim 13
Dependent Claim
43 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS, the gaseous hydrogen containing source comprises SiH 4 , and the oxidizing gas comprises an inorganic compound having an N--O bond.
Claim 14
Dependent Claim
91 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS generated by bubbling a gas through liquid TEOS to generate a resultant product which is fed to the reactor, the bubbling gas being fed to the liquid TEOS at a selected volumetric flow rate, the hydrogen containing source gas being fed to the reactor at a selected flow rate, the ratio of the flow rates of bubbling gas to hydrogen containing source gas being from about 50:1 to 5:1.
Claim 15
Dependent Claim
91 words
The deposition method of reducing fixed charge in a layer of silicon dioxide of claim 1 wherein the organosilicon compound comprises TEOS generated by bubbling a gas through liquid TEOS to generate a resultant product which is fed to the reactor, the bubbling gas being fed to the liquid TEOS at a selected volumetric flow rate, the hydrogen containing source gas being fed to the reactor at a selected flow rate, the ratio of the flow rates of bubbling gas to hydrogen containing source gas being from about 30:1 to 10:1.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2002-01-16 | 2002-07-18 | 2003-01-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-16 | 2006-07-18 | 2007-01-17 | $7700.00 | Window Closed / Lapsed |