US5741546A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing titanium nitride films on semiconductor wafers
Assignee: Micron Technology Inc
•
Filing: 1996-09-19
•
Granted: 1998-04-21
•
Expires: 2016-09-19
Abstract
Abstract A chemical vapor deposition method of providing a conformal layer of a titanium nitride atop a semiconductor wafer comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) providing a source of an activated halogen species within the chemical vapor deposition reactor; c) injecting selected quantities of a gaseous titanium organometallic .precursor and a carrier gas to within the reactor having the wafer positioned therein; and d) maintaining the reactor at a pressure of less than or equal to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reaction of the precursor to bond carbon thereof with the activated halogen species and to deposit a film on the wafer which comprises a titanium nitride.
Inventors
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:24
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/36; C23C16/44; C23C16/4401; C23C16/4404
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
125 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: positioning a semiconductor wafer within a chemical vapor deposition reactor; providing a source of an activated halogen species within the chemical vapor deposition reactor; injecting quantities of a gaseous carbon containing titanium organometallic precursor and a carrier gas into the reactor having the semiconductor wafer positioned therein; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and the semiconductor wafer at a temperature which in combination cause a reaction of the precursor to bond carbon thereof with the activated halogen species and to deposit a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 2
Dependent Claim
125 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: positioning a semiconductor wafer within a chemical vapor deposition reactor; providing a source of an activated halogen species within the chemical vapor deposition reactor; injecting quantities of a gaseous carbon containing titanium organometallic precursor and a carrier gas into the reactor having the semiconductor wafer positioned therein; and maintaining the reactor at a pressure of less than or equal to about 100 Torr and the semiconductor wafer at a temperature which in combination cause a reaction of the precursor to bond carbon thereof with the activated halogen species and to deposit a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 3
Dependent Claim
20 words
The chemical vapor deposition method of claim 1 wherein the pressure is less than or equal to about 1 Torr.
Claim 4
Dependent Claim
31 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor comprises a compound of the formula Ti(NR 2 ) 4 , where R comprises a carbon containing radical.
Claim 5
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor comprises Ti(N(CH 3 ) 2 ) 4 .
Claim 6
Dependent Claim
33 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor comprises Ti(N(CH 3 ) 2 ) 4 , and the pressure is less than or equal to about 1 Torr.
Claim 7
Dependent Claim
16 words
The chemical vapor deposition method of claim 1 wherein the deposited film consists essentially of TiN.
Claim 8
Dependent Claim
39 words
The chemical vapor deposition method of claim 1 wherein the step of providing a source of activated halogen species within the chemical vapor deposition reactor occurs before the step of positioning the wafer within the chemical vapor deposition reactor.
Claim 9
Dependent Claim
18 words
The chemical vapor deposition method of claim 1 wherein the activated halogen species comprises a halogen containing ion.
Claim 10
Dependent Claim
18 words
The chemical vapor deposition method of claim 1 wherein the activated halogen species comprises a halogen containing radical.
Claim 11
Dependent Claim
19 words
The chemical vapor deposition method of claim 1 wherein the activated halogen species comprises a halogen containing activated complex.
Claim 12
Dependent Claim
15 words
The chemical vapor deposition method of claim 1 wherein the activated halogen species comprises fluorine.
Claim 13
Dependent Claim
17 words
The chemical vapor deposition method of claim 1 wherein the activated halogen species comprises NF 3 .
Claim 14
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein the step of injecting comprises also injecting a selected quantity of NH 3 .
Claim 15
Dependent Claim
61 words
The chemical vapor deposition method of claim 13 wherein the selected temperature is from about 50° C. to 600° C., the pressure is from about 5 Torr to about 100 Torr, and further comprising the step of preheating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C. prior to the step of injecting.
Claim 16
Dependent Claim
57 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: providing a semiconductor wafer, an activated halogen species, and a carbon containing titanium organometallic precursor within a chemical vapor deposition reactor; and forming a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 17
Dependent Claim
57 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: providing a semiconductor wafer, an activated halogen species, and a carbon containing titanium organometallic precursor within a chemical vapor deposition reactor; and forming a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 18
Dependent Claim
17 words
The method of claim 15 further comprising bonding carbon of the precursor with the activated halogen species.
Claim 19
Dependent Claim
28 words
The method of claim 15 wherein the titanium organometallic precursor comprises a compound of the formula Ti(NR 2 ) 4 , where R comprises a carbon containing radical.
Claim 20
Dependent Claim
18 words
The method of claim 15 wherein the titanium organometallic precursor comprises Ti(N(CH 3 ) 2 ) 4 .
Claim 21
Dependent Claim
13 words
The method of claim 15 wherein the deposited film consists essentially of TiN.
Claim 22
Dependent Claim
15 words
The method of claim 15 wherein the activated halogen species comprises a halogen containing ion.
Claim 23
Dependent Claim
15 words
The method of claim 15 wherein the activated halogen species comprises a halogen containing radical.
Claim 24
Dependent Claim
16 words
The method of claim 15 wherein the activated halogen species comprises a halogen containing activated complex.
Claim 25
Dependent Claim
12 words
The method of claim 15 wherein the activated halogen species comprises fluorine.
Claim 26
Dependent Claim
14 words
The method of claim 15 wherein the activated halogen species comprises NF 3 .
Claim 27
Dependent Claim
67 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: treating internal sidewalls of a chemical vapor deposition reactor with an activated halogen species; providing the semiconductor wafer within the reactor; providing a carbon containing titanium organometallic precursor within the reactor; and forming a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 28
Dependent Claim
67 words
A chemical vapor deposition method of providing a layer comprising titanium and nitrogen atop a semiconductor wafer, the method comprising the following steps: treating internal sidewalls of a chemical vapor deposition reactor with an activated halogen species; providing the semiconductor wafer within the reactor; providing a carbon containing titanium organometallic precursor within the reactor; and forming a film on the semiconductor wafer which comprises titanium and nitrogen.
Claim 29
Dependent Claim
21 words
The method of claim 25 wherein the sidewalls are treated prior to the provision of the semiconductor wafer within the reactor.
Claim 30
Dependent Claim
24 words
The method of claim 25 wherein the sidewalls are treated prior to the provision of the carbon containing titanium organometallic precursor within the reactor.
Claim 31
Dependent Claim
28 words
The method of claim 25 further comprising: withdrawing the activated halogenated species from the reactor sidewalls; and bonding carbon from the precursor with the withdrawn activated halogen species.
Claim 32
Dependent Claim
28 words
The method of claim 25 wherein the titanium organometallic precursor comprises a compound of the formula Ti(NR 2 ) 4 , where R comprises a carbon containing radical.
Claim 33
Dependent Claim
18 words
The method of claim 25 wherein the titanium organometallic precursor comprises Ti(N(CH 3 ) 2 ) 4 .
Claim 34
Dependent Claim
13 words
The method of claim 25 wherein the deposited film consists essentially of TiN.
Claim 35
Dependent Claim
15 words
The method of claim 25 wherein the activated halogen species comprises a halogen containing ion.
Claim 36
Dependent Claim
15 words
The method of claim 25 wherein the activated halogen species comprises a halogen containing radical.
Claim 37
Dependent Claim
16 words
The method of claim 25 wherein the activated halogen species comprises a halogen containing activated complex.
Claim 38
Dependent Claim
12 words
The method of claim 25 wherein the activated halogen species comprises fluorine.
Claim 39
Dependent Claim
14 words
The method of claim 25 wherein the activated halogen species comprises NF 3 .
References Cited (Backward Citations)
US3807008A
Cited
US4784874A
Cited
US4842897A
Cited
US5135607A
Cited
US4830886A
Cited
US5139825A
Cited
US5087593A
Cited
US5089438A
Cited
US5192589A
Cited
US5571572A
Cited
US5254499A
Cited
US5246881A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |