US5089438A
Expired / Lapsed
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Method of making an article comprising a TiNx layer
Assignee: Nokia Bell Labs
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Filing: 1991-04-26
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Granted: 1992-02-18
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Expires: 2011-04-26
Abstract
Abstract Disclosed is a method that comprises selective deposition of titanium nitride TiN x on III-V compound semiconductor material. The TiN x can advantageously be used as contact metal. Exemplarily, deposition is by rapid thermal low pressure (RT-LP) MOCVD using dimethylamidotitanium with H 2 carrier gas.
Inventors
- 👤 Avishay Katz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:03
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D62/00; H10D62/80; H10D62/85; H10D64/60; H10D64/62; Y; Y10; Y10S; Y10S148/00; Y10S148/126
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
165 words
Method of making an article comprising a semiconductor device, the method comprising a) providing a semiconductor body having a major surface; b) forming on the surface a patterned titanium nitride (TiN x , 0.9≦×≦1.1) layer; c) carrying out one or more further steps towards completion of the article; CHARACTERIZED IN THAT d) the semiconductor body is a III-V compound semiconductor body; and e) step b) comprises forming a patterned first material layer on the surface, such that a predetermined portion of the surface is not covered by the first material layer; and further comprises contacting the major surface with an atmosphere that comprises a Ti- and N-containing metalorganic gaseous precursor, heating at least a portion of the semiconductor body to a temperature in the range 250°-500° C. for at most 300 seconds, the atmosphere, temperature and heating time selected such that said TiN x is deposited on the predetermined portion of the surface, and substantially no TiN x is deposited on the first material layer.
Claim 2
Dependent Claim
165 words
Method of making an article comprising a semiconductor device, the method comprising a) providing a semiconductor body having a major surface; b) forming on the surface a patterned titanium nitride (TiN x , 0.9≦×≦1.1) layer; c) carrying out one or more further steps towards completion of the article; CHARACTERIZED IN THAT d) the semiconductor body is a III-V compound semiconductor body; and e) step b) comprises forming a patterned first material layer on the surface, such that a predetermined portion of the surface is not covered by the first material layer; and further comprises contacting the major surface with an atmosphere that comprises a Ti- and N-containing metalorganic gaseous precursor, heating at least a portion of the semiconductor body to a temperature in the range 250°-500° C. for at most 300 seconds, the atmosphere, temperature and heating time selected such that said TiN x is deposited on the predetermined portion of the surface, and substantially no TiN x is deposited on the first material layer.
Claim 3
Dependent Claim
43 words
Method of claim 1, wherein the Ti- and N-containing precursor is dimethylamidotitanium (DMATi), wherein the first material layer is a SiO 2 layer or a silicon nitride layer, and wherein said TiN x layer contains at least 55 mole % TiN x .
Claim 4
Dependent Claim
12 words
Method of claim 1, wherein the atmosphere further comprises NH 3 .
Claim 5
Dependent Claim
61 words
Method of claim 1, wherein the atmosphere further comprises a dopant precursor such that the patterned TiN x layer is a doped patterned layer, and step c) comprises heating the body with the doped patterned layer thereon to a temperature effective for causing diffusion of dopant from the doped patterned layer into the semiconductor body, said temperature being below 550° C.
Claim 6
Dependent Claim
25 words
Method of claim 1, comprising, prior to step b, heating the semiconductor body in a protective atmosphere to a temperature of at most 1000° C.
Claim 7
Dependent Claim
23 words
Method of claim 5, wherein the semiconductor body comprises P, the protective atmosphere comprises tertiarybutylphosphine, and the temperature is at most 700° C.
Claim 8
Dependent Claim
16 words
Method of claim 5, wherein the semiconductor body comprises As and the protective atmosphere comprises tertiarybutylarsine.
Claim 9
Dependent Claim
17 words
Method of claim 1, wherein step c) comprises depositing a metal onto the patterned TiN x layer.
References Cited (Backward Citations)
EP0174743A2
Cited
EP0370775A2
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-02-17 | 1995-08-19 | 1996-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-17 | 1999-08-19 | 2000-02-18 | $3760.00 | Window Closed / Lapsed |
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