US6063705A
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US
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Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
Assignee: Micron Technology Inc
•
Filing: 1998-08-27
•
Granted: 2000-05-16
•
Expires: 2018-08-27
Abstract
Abstract A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium having the formula: L y RuX z where L is a neutral or monoanionic ligand selected from the group consisting essentially of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes; fluorinated derivatives thereof; derivatives thereof additionally containing heteroatoms such as a halide, Si, S, Se, P, As, N or O; and combinations thereof; where X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitriles, isonitriles, trialkylphosphines, trialkylphosphites, trialkylamines, and isocyanide, and where subscripts y and z have a value of from one (1) to three (3); or L 1 Ru(CO) 4 where L is a neutral or monoanionic ligand selected from the group including linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/16; C23C16/18; C07; C07F; C07F15/00; C07F15/0006; C07F15/0046; C23C16/22; C23C16/30; C23C16/40; C23C16/44; C23C16/453; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
153 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L y RuX z , where (a) L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; (b) y has a value of from one (1) to three (3); (c) X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; and (d) z has a value of from one (1) to three (3).
Claim 2
Independent Claim
153 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L y RuX z , where (a) L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; (b) y has a value of from one (1) to three (3); (c) X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; and (d) z has a value of from one (1) to three (3).
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein the precursor compound is a liquid.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the substrate is a semiconductor wafer.
Claim 5
Dependent Claim
18 words
The method of claim 1, wherein the chemical vapor deposition technique is a hot wall chemical vapor deposition.
Claim 6
Dependent Claim
18 words
The method of claim 1, wherein the chemical vapor deposition technique is a cold wall chemical vapor deposition.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein the chemical vapor deposition technique is an atmospheric chemical vapor deposition.
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein the chemical vapor deposition technique is a low-pressure chemical vapor deposition.
Claim 9
Dependent Claim
12 words
The method of claim 1, wherein the precursor compound is cyclohexadienetricarbonyl ruthenium.
Claim 10
Dependent Claim
12 words
The method of claim 1, wherein the precursor compound is cycloheptadienetricarbonyl ruthenium.
Claim 11
Dependent Claim
11 words
The method of claim 1, wherein the precursor compound contains oxygen.
Claim 12
Dependent Claim
28 words
The method of claim 1, wherein the chemical vapor deposition technique is carried out in the presence of an oxidizing gas to deposit films of RuO 2 .
Claim 13
Dependent Claim
11 words
The method of claim 11, wherein said oxidizing gas comprises oxygen.
Claim 14
Dependent Claim
13 words
The method of claim 11, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 15
Dependent Claim
13 words
The method of claim 1, wherein said ruthenium containing material comprises pure ruthenium.
Claim 16
Dependent Claim
14 words
The method of claim 1, wherein said ruthenium containing material comprises a ruthenium oxide.
Claim 17
Independent Claim
128 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L 1 RuX 3 where (a) L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; and (b) X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof.
Claim 18
Independent Claim
128 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L 1 RuX 3 where (a) L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; and (b) X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof.
Claim 19
Dependent Claim
12 words
The method of claim 16, wherein the precursor compound is a liquid.
Claim 20
Dependent Claim
12 words
The method of claim 16, wherein the substrate is a semiconductor wafer.
Claim 21
Dependent Claim
18 words
The method of claim 16, wherein the chemical vapor deposition technique is a hot wall chemical vapor deposition.
Claim 22
Dependent Claim
18 words
The method of claim 16, wherein the chemical vapor deposition technique is a cold wall chemical vapor deposition.
Claim 23
Dependent Claim
17 words
The method of claim 16, wherein the chemical vapor deposition technique is an atmospheric chemical vapor deposition.
Claim 24
Dependent Claim
17 words
The method of claim 16, wherein the chemical vapor deposition technique is a low-pressure chemical vapor deposition.
Claim 25
Dependent Claim
11 words
The method of claim 16, wherein the precursor compound contains oxygen.
Claim 26
Dependent Claim
28 words
The method of claim 16, wherein the chemical vapor deposition technique is carried out in the presence of an oxidizing gas to deposit films of RuO 2 .
Claim 27
Dependent Claim
11 words
The method of claim 24, wherein said oxidizing gas comprises oxygen.
Claim 28
Dependent Claim
13 words
The method of claim 24, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 29
Dependent Claim
13 words
The method of claim 16, wherein said ruthenium containing material comprises pure ruthenium.
Claim 30
Dependent Claim
14 words
The method of claim 16, wherein said ruthenium containing material comprises a ruthenium oxide.
Claim 31
Independent Claim
69 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L 1 Ru(CO) 4 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes.
Claim 32
Independent Claim
69 words
A method of applying a film of a ruthenium containing material on a surface of a substrate comprising employing a chemical vapor deposition technique to decompose a precursor compound of the formula L 1 Ru(CO) 4 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes.
Claim 33
Dependent Claim
12 words
The method of claim 29, wherein the precursor compound is a liquid.
Claim 34
Dependent Claim
12 words
The method of claim 29, wherein the substrate is a semiconductor wafer.
Claim 35
Dependent Claim
18 words
The method of claim 29, wherein the chemical vapor deposition technique is a hot wall chemical vapor deposition.
Claim 36
Dependent Claim
18 words
The method of claim 29, wherein the chemical vapor deposition technique is a cold wall chemical vapor deposition.
Claim 37
Dependent Claim
17 words
The method of claim 29, wherein the chemical vapor deposition technique is an atmospheric chemical vapor deposition.
Claim 38
Dependent Claim
17 words
The method of claim 29, wherein the chemical vapor deposition technique is a low-pressure chemical vapor deposition.
Claim 39
Dependent Claim
11 words
The method of claim 29, wherein the precursor compound contains oxygen.
Claim 40
Dependent Claim
28 words
The method of claim 29, wherein the chemical vapor deposition technique is carried out in the presence of an oxidizing gas to deposit films of RuO 2 .
Claim 41
Dependent Claim
11 words
The method of claim 37, wherein said oxidizing gas comprises oxygen.
Claim 42
Dependent Claim
13 words
The method of claim 37, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 43
Dependent Claim
13 words
The method of claim 29, wherein said ruthenium containing material comprises pure ruthenium.
Claim 44
Dependent Claim
14 words
The method of claim 29, wherein said ruthenium containing material comprises a ruthenium oxide.
Claim 45
Independent Claim
185 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L y RuX z , where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; y has a value of from one (1) to three (3); X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; and z has a value of from one (1) to three (3); placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 46
Independent Claim
185 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L y RuX z , where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; y has a value of from one (1) to three (3); X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; and z has a value of from one (1) to three (3); placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 47
Dependent Claim
15 words
The method of claim 42, wherein said reaction chamber is maintained at an atmospheric pressure.
Claim 48
Dependent Claim
15 words
The method of claim 42, wherein said reaction chamber is maintained at a subatmospheric pressure.
Claim 49
Dependent Claim
20 words
The method of claim 42, further including heating said reaction chamber after the substrate is placed into said reaction chamber.
Claim 50
Dependent Claim
11 words
The method of claim 42, wherein said precursor compound contains oxygen.
Claim 51
Dependent Claim
20 words
The method of claim 42, further comprising introducing an oxidizing gas into said reaction chamber after said substrate is heated.
Claim 52
Dependent Claim
11 words
The method of claim 47, wherein said oxidizing gas comprises oxygen.
Claim 53
Dependent Claim
13 words
The method of claim 47, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 54
Dependent Claim
13 words
The method of claim 42, wherein said ruthenium containing material comprises pure ruthenium.
Claim 55
Dependent Claim
14 words
The method of claim 42, wherein said ruthenium containing material comprises a ruthenium oxide.
Claim 56
Independent Claim
161 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L 1 RuX 3 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 57
Independent Claim
161 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L 1 RuX 3 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, fluorinated derivatives thereof, combinations thereof, and derivatives thereof additionally containing heteroatoms selected from the group consisting of halides, Si, S, Se, P, As, N and O; X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitrites, isonitriles, trialkylphosphine, trialkylamine, isocyanide, and combinations thereof; placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 58
Dependent Claim
15 words
The method of claim 52, wherein said reaction chamber is maintained at an atmospheric pressure.
Claim 59
Dependent Claim
15 words
The method of claim 52, wherein said reaction chamber is maintained at a subatmospheric pressure.
Claim 60
Dependent Claim
20 words
The method of claim 52, further including heating said reaction chamber after the substrate is placed into said reaction chamber.
Claim 61
Dependent Claim
11 words
The method of claim 52, wherein said precursor compound contains oxygen.
Claim 62
Dependent Claim
21 words
The method of claim 52, further comprising introducing an oxidizing carrier gas into said reaction chamber after said substrate is heated.
Claim 63
Dependent Claim
11 words
The method of claim 57, wherein said oxidizing gas comprises oxygen.
Claim 64
Dependent Claim
13 words
The method of claim 57, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 65
Dependent Claim
13 words
The method of claim 52, wherein said ruthenium containing material comprises pure ruthenium.
Claim 66
Dependent Claim
14 words
The method of claim 52, wherein said ruthenium containing material comprises a ruthenium oxide.
Claim 67
Independent Claim
105 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L 1 Ru(CO) 4 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes; placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 68
Independent Claim
105 words
A method for depositing a ruthenium containing material on a substrate comprising: providing a precursor compound of the formula L 1 Ru(CO) 4 where L is a neutral or monoanionic ligand selected from the group consisting of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes; placing the substrate in a reaction chamber; heating said substrate to a temperature at least equal to the decomposition temperature of said precursor compound; and transporting said precursor compound into said reaction chamber to permit said precursor to decompose onto said substrate and deposit a film containing Ru thereon.
Claim 69
Dependent Claim
15 words
The method of claim 62, wherein said reaction chamber is maintained at an atmospheric pressure.
Claim 70
Dependent Claim
15 words
The method of claim 62, wherein said reaction chamber is maintained at a subatmospheric pressure.
Claim 71
Dependent Claim
20 words
The method of claim 62, further including heating said reaction chamber after the substrate is placed into said reaction chamber.
Claim 72
Dependent Claim
11 words
The method of claim 62, wherein said precursor compound contains oxygen.
Claim 73
Dependent Claim
20 words
The method of claim 62, further comprising introducing an oxidizing gas into said reaction chamber after said substrate is heated.
Claim 74
Dependent Claim
11 words
The method of claim 67, wherein said oxidizing gas comprises oxygen.
Claim 75
Dependent Claim
13 words
The method of claim 67, wherein said oxidizing gas comprises an oxygen-containing compound.
Claim 76
Dependent Claim
13 words
The method of claim 62, wherein said ruthenium containing material comprises pure ruthenium.
Claim 77
Dependent Claim
14 words
The method of claim 62, wherein said ruthenium containing material comprises a ruthenium oxide.
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