US5618761A
Expired / Lapsed
US
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Method of manufacturing a perovskite thin film dielectric
Assignee: Toshiba Corp
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Filing: 1995-09-11
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Granted: 1997-04-08
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Expires: 2015-09-11
Abstract
Abstract Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below: ABO.sub.3 (1) where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti, The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000° C. or less by using a raw material gas containing a complex compound of element A with a β-diketone, a complex compound of element B with a β-diketone, and an oxidizing agent.
Inventors
- 👤 Kazuhiro Eguchi
- 👤 Masahiro Kiyotoshi
- 👤 Keitaro Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 01:00
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/038; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
197 words
A method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, said dielectric thin film being made of a compound represented by the general formula (1) given below: ABO.sub.3 ( 1) where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti, wherein said dielectric thin film is formed by a chemical vapor deposition carried out under the kinetically limited conditions in which a pressure is 400 Torr or less and a temperature is 1,000° C. or less by using a raw material gas containing a β-diketone complex compound of said element A, a β-diketone complex compound of said element B, and an oxidizing agent; and wherein the supply amount of said β-diketone complex compound of said element B is at least 5 times as much in molar ratio as the supply amount of said β-diketone complex compound of said element A so as to form said dielectric thin film in which the element ratio A/A+B is substantially equal to stoichiometric ratio of 0.5.
Claim 2
Independent Claim
197 words
A method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, said dielectric thin film being made of a compound represented by the general formula (1) given below: ABO.sub.3 ( 1) where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti, wherein said dielectric thin film is formed by a chemical vapor deposition carried out under the kinetically limited conditions in which a pressure is 400 Torr or less and a temperature is 1,000° C. or less by using a raw material gas containing a β-diketone complex compound of said element A, a β-diketone complex compound of said element B, and an oxidizing agent; and wherein the supply amount of said β-diketone complex compound of said element B is at least 5 times as much in molar ratio as the supply amount of said β-diketone complex compound of said element A so as to form said dielectric thin film in which the element ratio A/A+B is substantially equal to stoichiometric ratio of 0.5.
Claim 3
Dependent Claim
47 words
The method of manufacturing a semiconductor device according to claim 1, wherein said chemical vapor deposition is carried out under temperatures lower than the thermal decomposition temperature of any of said β-diketone complex compound of said element A and said β-diketone complex compound of said element B.
Claim 4
Dependent Claim
58 words
The method of manufacturing a semiconductor device according to claim 1, wherein said chemical vapor deposition is carried out under the condition that the supply amount of said β-diketone complex compound of said element B is at least 10 times as much in molar ratio as the supply amount of said β-diketone complex compound of said element A.
Claim 5
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 1, wherein the compound represented by said general formula (1) is Ba x Sr 1-x TiO 3 (0≦x≦1).
Claim 6
Dependent Claim
34 words
The method of manufacturing a semiconductor device according to claim 1, wherein the β-diketone ligand of at least one of said two complex compounds is dipivaloylmethane (DPM; C 11 H 19 O 2 ).
Claim 7
Dependent Claim
22 words
The method of manufacturing a semiconductor device according to claim 1, wherein said oxidizing agent includes oxygen molecules or N 2 O.
Claim 8
Dependent Claim
22 words
The method of manufacturing a semiconductor device according to claim 1, wherein the β-diketone ligands of said two complex compounds are dipivaloylmethane.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-04-07 | 2000-10-07 | 2001-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-07 | 2004-10-07 | 2005-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-07 | 2008-10-07 | 2009-04-08 | $7700.00 | Window Closed / Lapsed |