US5258204A
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US
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Chemical vapor deposition of metal oxide films from reaction product precursors
Assignee: Eastman Kodak Co
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Filing: 1992-06-18
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Granted: 1993-11-02
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Expires: 2012-06-18
Abstract
Abstract Thin, uniform films of complex metal oxides are deposited by chemical vapor deposition onto a substrate by vaporizing a single source precursor, which is the reaction product of a metal M' beta-diketonate and a metal M" alkoxide, where metal M' is Li, Na, K, Ba, Mg, Ca, Sr, or Pb, and metal M" is V, Nb, Ta, or Ti, and contacting the vapor with the substrate at a temperature sufficiently high to decompose the precursor and form an M'M" metal oxide. Alternatively, compounds in which a M" metal is attached to a beta-diketonate, and an M' metal is attached to an alkoxide, are used to form the reaction product vapor precursor.
Inventors
- 👤 Alex A. Wernberg
- 👤 Henry J. Gysling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:52
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/30; C30B29/32
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
98 words
A method for depositing an oxide film on a substrate, which comprises: reacting a metal M' beta-diketonate and a metal M" alkoxide to form a reaction product single source precursor, wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta or Ti, vaporizing said single source precursor, and contracting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and deposit an oxide of the form M'M"0 3 on said substrate.
Claim 2
Independent Claim
98 words
A method for depositing an oxide film on a substrate, which comprises: reacting a metal M' beta-diketonate and a metal M" alkoxide to form a reaction product single source precursor, wherein one of either M' or M" is Li, Na, K, Mg, Ca, Sr, Ba, or Pb, and the other of either M' or M" is V, Nb, Ta or Ti, vaporizing said single source precursor, and contracting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and deposit an oxide of the form M'M"0 3 on said substrate.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said substrate is contacted with said vapor in an oxidizing atmosphere.
Claim 4
Dependent Claim
19 words
A method according to claim 1, wherein said deposited oxide film has a substantially uniform composition on said substrate.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein said oxide film has a substantially uniform and correct stoichiometry.
Claim 6
Dependent Claim
23 words
A method according to claim 1, wherein the vapor of said precursor contacts said substrate in the presence of a second vapor precursor.
Claim 7
Dependent Claim
13 words
A method according to claim 1, wherein said oxide film is substantially monocrystalline.
Claim 8
Independent Claim
114 words
A method for depositing an oxide film of the composition M'M"0 3 on a substrate, which comprises: vaporizing a single source precursor compound of the general formula M'M" (OR) x (R'C(O)CHC(O)R") 6-x' wherein one of either M' or M" is an alkali, alkaline earth metal or lead, and the other of either M' or M" is V, Nb, Ta or Ti, R and R' and R" are alkyl, aryl or substituted alkyl or aryl, and x is from 1 to 5, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form an oxide film of the form M'M"0 3 on said substrate.
Claim 9
Independent Claim
114 words
A method for depositing an oxide film of the composition M'M"0 3 on a substrate, which comprises: vaporizing a single source precursor compound of the general formula M'M" (OR) x (R'C(O)CHC(O)R") 6-x' wherein one of either M' or M" is an alkali, alkaline earth metal or lead, and the other of either M' or M" is V, Nb, Ta or Ti, R and R' and R" are alkyl, aryl or substituted alkyl or aryl, and x is from 1 to 5, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form an oxide film of the form M'M"0 3 on said substrate.
Claim 10
Dependent Claim
18 words
A method according to claim 7, wherein said substrate is contacted with said vapor in an oxidizing atmosphere.
Claim 11
Dependent Claim
15 words
A method according to claim 7, wherein said oxide film has a substantially uniform composition.
Claim 12
Dependent Claim
17 words
A method according to claim 7, wherein said oxide film has a substantially uniform and correct stoichiometry.
Claim 13
Independent Claim
70 words
A method for depositing an oxide film of LiNbO 3 on a substrate, which comprises: reacting a lithium beta diketonate and a niobium alkoxide to form a reaction product which is a single source precursor, vaporizing said single source precursor, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form a film of LiNbO 3 on said substrate.
Claim 14
Independent Claim
70 words
A method for depositing an oxide film of LiNbO 3 on a substrate, which comprises: reacting a lithium beta diketonate and a niobium alkoxide to form a reaction product which is a single source precursor, vaporizing said single source precursor, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form a film of LiNbO 3 on said substrate.
Claim 15
Dependent Claim
18 words
A method according to claim 11, wherein said substrate is contacted with said vapor in an oxidizing atmosphere.
Claim 16
Dependent Claim
15 words
A method according to claim 11, wherein said oxide film has a substantially uniform composition.
Claim 17
Dependent Claim
17 words
A method according to claim 11, wherein said oxide film has a substantially uniform and correct stoichiometry.
Claim 18
Dependent Claim
21 words
A method according to claim 11, wherein said lithium beta diketonate and said niobium alkoxide are reacted in an equimolar ratio.
Claim 19
Independent Claim
96 words
A method for depositing an oxide film on a substrate, which comprises: vaporizing a single source precursor which is a reaction product of a metal M' beta-diketonate and a metal M" alkoxide, wherein one of either M' or M" is Li, Na, K, Sr, Mg, Ca, Pb, or Ba, and the other of either M' or M" is V, Nb, Ta, or Ti, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form an oxide film of the form M'M"0 3 on said substrate.
Claim 20
Independent Claim
96 words
A method for depositing an oxide film on a substrate, which comprises: vaporizing a single source precursor which is a reaction product of a metal M' beta-diketonate and a metal M" alkoxide, wherein one of either M' or M" is Li, Na, K, Sr, Mg, Ca, Pb, or Ba, and the other of either M' or M" is V, Nb, Ta, or Ti, and contacting said substrate with the vapor of said single source precursor at a temperature sufficient to decompose said precursor and form an oxide film of the form M'M"0 3 on said substrate.
Claim 21
Dependent Claim
18 words
A method according to claim 16, wherein said substrate is contacted with said vapor in an oxidizing atmosphere.
References Cited (Backward Citations)
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