US5637533A
Expired / Lapsed
US
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Method for fabricating a diffusion barrier metal layer in a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-05-15
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Granted: 1997-06-10
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Expires: 2016-05-15
Abstract
Abstract A method for fabricating a diffusion barrier metal layer of a semiconductor device for preventing a material of a metal wiring of said semiconductor device from being diffused into a silicon layer under said metal wiring is disclosed including the steps of: exposing the surface of said silicon layer to oxygen plasma, to prevent a silicide from being formed at the interface between said silicon layer and diffusion barrier metal layer; forming a first diffusion barrier metal layer on said silicon layer; implanting oxygen ions into said first diffusion barrier metal layer; and forming a second diffusion barrier metal layer on said first diffusion barrier metal layer.
Inventors
- 👤 Kyeong K. Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10P; H10P14/00; H10P14/40; H10P14/418; H10W20/033
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
119 words
A method for fabricating a diffusion barrier metal layer in a semiconductor device, for preventing a material of a metal wiring in said semiconductor device from being diffused into a silicon layer under said metal wiring, said method comprising the steps of: exposing the surface of said silicon layer to oxygen plasma, to prevent a silicide from being formed at the interface between said silicon layer and diffusion barrier metal layer; forming a first diffusion barrier metal layer on said silicon layer; implanting oxygen ions into said first diffusion barrier metal layer; and forming a second diffusion barrier metal layer on said first diffusion barrier metal layer, wherein said first and second diffusion barder metal layers are ruthenium layers.
Claim 2
Independent Claim
119 words
A method for fabricating a diffusion barrier metal layer in a semiconductor device, for preventing a material of a metal wiring in said semiconductor device from being diffused into a silicon layer under said metal wiring, said method comprising the steps of: exposing the surface of said silicon layer to oxygen plasma, to prevent a silicide from being formed at the interface between said silicon layer and diffusion barrier metal layer; forming a first diffusion barrier metal layer on said silicon layer; implanting oxygen ions into said first diffusion barrier metal layer; and forming a second diffusion barrier metal layer on said first diffusion barrier metal layer, wherein said first and second diffusion barder metal layers are ruthenium layers.
Claim 3
Dependent Claim
35 words
The method in accordance with claim 1, wherein said O 2 plasma is formed at a low power of below 50 W and a gas flow of 5 sccm to 50 sccm in PECVD chamber.
Claim 4
Dependent Claim
25 words
The method in accordance with claim 2, wherein the density of said oxygen ions is a dose of 10 15 -10 19 ions/cm 2 .
Claim 5
Dependent Claim
25 words
The method in accordance with claim 2, wherein said first diffusion barrier metal layer is formed at a thickness of 100 Å to 500 Å.
Claim 6
Dependent Claim
31 words
The method in accordance with claim 1, the step of forming said second diffusion barrier metal layer further comprises the step of oxidizing said first and second diffusion barrier metal layers.
Claim 7
Dependent Claim
35 words
The method in accordance with claim 5, wherein said oxidizing step is heat treatment carried out in a tube, in which argon and oxygen, or nitrogen and oxygen are mixed, for one to five hours.
Claim 8
Dependent Claim
27 words
The method in accordance with claim 6, wherein the flow of said argon/oxygen or nitrogen/oxygen in said tube is approximately 100 sccm/10 sccm to 2000 sccm/300 sccm.
Claim 9
Dependent Claim
20 words
The method in accordance with claim 7, wherein the temperature in said tube is approximately 400° C. to 700° C.
References Cited (Backward Citations)
US5183775A
Cited
US5555486A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-06-09 | 2000-12-09 | 2001-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-09 | 2004-12-09 | 2005-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-09 | 2008-12-09 | 2009-06-10 | $7700.00 | Window Closed / Lapsed |