US6156674A
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Semiconductor processing methods of forming insulative materials
Assignee: Micron Technology Inc
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Filing: 1998-11-25
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Granted: 2000-12-05
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Expires: 2018-11-25
Abstract
Abstract In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H 2 O 2 to form an insulative compound comprising silicon bound to CH 3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH 3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH 3 groups.
Inventors
- 👤 Weimin Li
- 👤 Zhiping Yin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338; H10P14/6336; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
54 words
A semiconductor processing method, comprising: combining a first gaseous precursor compound with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen; the first precursor compound being SiH 4 and the second precursor being an organic compound comprising oxygen; and forming a layer of the material over a semiconductive substrate.
Claim 2
Dependent Claim
54 words
A semiconductor processing method, comprising: combining a first gaseous precursor compound with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen; the first precursor compound being SiH 4 and the second precursor being an organic compound comprising oxygen; and forming a layer of the material over a semiconductive substrate.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein the second precursor compound is selected from the group consisting of one or more of O 3 , O 2 and N 2 O.
Claim 4
Dependent Claim
68 words
A semiconductor processing method, comprising: combining a first gaseous precursor compound with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen; forming a layer of the material over a semiconductive substrate; and wherein the first precursor compound consists essentially of carbon, hydrogen and silicon; wherein the second precursor compound comprises oxygen; and wherein the material consists essentially of carbon, hydrogen, silicon and oxygen.
Claim 5
Dependent Claim
68 words
A semiconductor processing method, comprising: combining a first gaseous precursor compound with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen; forming a layer of the material over a semiconductive substrate; and wherein the first precursor compound consists essentially of carbon, hydrogen and silicon; wherein the second precursor compound comprises oxygen; and wherein the material consists essentially of carbon, hydrogen, silicon and oxygen.
Claim 6
Dependent Claim
28 words
The method of claim 3 wherein the second precursor compound is selected from the group consisting of one or more of 03, O 2 and N 2 O.
Claim 7
Dependent Claim
14 words
The method of claim 3 wherein the material comprises (CH 3 ) y SiO.sub.(2-y).
Claim 8
Dependent Claim
16 words
The method of claim 3 wherein the material consists essentially of (CH 3 ) y SiO.sub.(2-y).
Claim 9
Dependent Claim
69 words
The method of claim 3 wherein: the first precursor compound consists essentially of (CH 3 ) y SiH x , wherein y is from 1 to 4 and x is from 0 to 3; the second precursor compound is selected from the group consisting of one or more of O 3 , O 2 and N 2 O; and the material consists essentially of (CH 3 ) y SiO.sub.(2-y).
Claim 10
Dependent Claim
55 words
A semiconductor processing method, comprising: combining a first compound with an oxygen-containing moiety to form a second compound; the oxygen-containing moiety not being H 2 O 2 , the first compound comprising carbon and silicon; the second compound comprising carbon, silicon and oxygen; and forming a layer of the second compound over a semiconductive substrate.
Claim 11
Dependent Claim
55 words
A semiconductor processing method, comprising: combining a first compound with an oxygen-containing moiety to form a second compound; the oxygen-containing moiety not being H 2 O 2 , the first compound comprising carbon and silicon; the second compound comprising carbon, silicon and oxygen; and forming a layer of the second compound over a semiconductive substrate.
Claim 12
Dependent Claim
29 words
The method of claim 8 wherein the first compound consists essentially of carbon, hydrogen and silicon, and wherein the second compound consists essentially of carbon, hydrogen, silicon and oxygen.
Claim 13
Dependent Claim
28 words
The method of claim 8 wherein the oxygen-containing moiety is generated by exposing at least one of O 3 , O 2 or N 2 O to plasma.
Claim 14
Dependent Claim
23 words
The method of claim 8 wherein the oxygen-containing moiety comprises at least one of O 3 , O 2 or N 2 O.
Claim 15
Dependent Claim
21 words
The method of claim 8 wherein the oxygen-containing moiety is generated by exposing O 2 or O 3 to ultraviolet light.
Claim 16
Dependent Claim
77 words
The method of claim 8 wherein the oxygen-containing moiety is N 2 O, wherein the first compound comprises (CH 3 ) y SiH x , wherein y is from 1 to 4 and x is from 0 to 3, and wherein the combining comprises: flowing the N 2 O and (CH 3 ) y SiH x into a reaction chamber; and mixing the N 2 O and (CH 3 ) y SiH x within the reaction chamber.
Claim 17
Dependent Claim
40 words
The method of claim 8 wherein the majority of the carbon present in the second compound is in the form of methyl groups, and wherein the methyl groups comprise from 10% to about 15% of the second compound (mole percent).
Claim 18
Dependent Claim
40 words
The method of claim 8 wherein substantially all of the carbon present in the second compound is in the form of methyl groups, and wherein the methyl groups comprise from 5% to about 50% of the second compound (mole percent).
Claim 19
Dependent Claim
22 words
The method of claim 8 wherein the carbon present in the first and second compounds is in the form of hydrocarbon groups.
Claim 20
Dependent Claim
34 words
The method of claim 8 wherein the combining occurs in a reactor and with a pressure within the reactor being at from about 300 mTorr to about 30 Torr during the combining and forming.
Claim 21
Dependent Claim
39 words
The method of claim 8 wherein the combining occurs in a reactor and simultaneously with the forming; a pressure within the reactor being greater than 0 Torr and no greater than about 1 atmosphere during the combining and forming.
Claim 22
Dependent Claim
28 words
The method of claim 8 wherein the combining occurs in a reactor and with a pressure within the reactor at from about 1 mTorr to about 10 Torr.
Claim 23
Dependent Claim
23 words
The method of claim 8 further comprising exposing a gaseous precursor of the first compound to a plasma to form the first compound.
Claim 24
Dependent Claim
42 words
The method of claim 8 further comprising: exposing a gaseous precursor of the first compound to a plasma to form a layer of the first compound over the substrate; and the combining comprising exposing the layer of the first compound to oxygen.
Claim 25
Dependent Claim
15 words
The method of claim 8 wherein the second compound comprises (CH 3 ) y SiO.sub.(2-y).
Claim 26
Dependent Claim
17 words
The method of claim 10 wherein the second compound consists essentially of (CH 3 ) y SiO.sub.(2-y).
Claim 27
Dependent Claim
65 words
A semiconductor processing method, comprising: combining a first gaseous compound with an oxygen-containing moiety to form a second compound; the oxygen-containing moiety being selected from the group consisting of O 3 , O 2 and N 2 O, the first compound comprising carbon and silicon; the second compound comprising carbon, silicon and oxygen; and forming a layer of the second compound over a semiconductive substrate.
Claim 28
Dependent Claim
65 words
A semiconductor processing method, comprising: combining a first gaseous compound with an oxygen-containing moiety to form a second compound; the oxygen-containing moiety being selected from the group consisting of O 3 , O 2 and N 2 O, the first compound comprising carbon and silicon; the second compound comprising carbon, silicon and oxygen; and forming a layer of the second compound over a semiconductive substrate.
Claim 29
Dependent Claim
29 words
The method of claim 24 wherein the first compound consists essentially of carbon, hydrogen and silicon, and wherein the second compound consists essentially of carbon, hydrogen, silicon and oxygen.
Claim 30
Dependent Claim
43 words
A semiconductor processing method, comprising: combining methylsilane with a form of oxygen other than H 2 O 2 to form an insulative compound comprising silicon bound to methyl groups and oxygen; and forming a layer of the insulative compound over a semiconductive substrate.
Claim 31
Dependent Claim
43 words
A semiconductor processing method, comprising: combining methylsilane with a form of oxygen other than H 2 O 2 to form an insulative compound comprising silicon bound to methyl groups and oxygen; and forming a layer of the insulative compound over a semiconductive substrate.
Claim 32
Dependent Claim
22 words
The method of claim 26 wherein the oxygen is in the form of O 3 , O 2 or N 2 O.
Claim 33
Dependent Claim
17 words
The method of claim 26 wherein the oxygen is generated by exposing O 2 to ultraviolet light.
Claim 34
Dependent Claim
64 words
The method of claim 26 wherein the oxygen is in the form of N 2 O and wherein the combining comprises: flowing the N 2 O and methylsilane into a reaction chamber; and mixing the N 2 O and methylsilane within the reaction chamber; a pressure within the reaction chamber being maintained at from about 300 mTorr to about 30 Torr during the mixing.
Claim 35
Dependent Claim
25 words
The method of claim 26 wherein the methyl groups within the insulative compound comprise from 5% to about 50% of the insulative compound (mole percent).
Claim 36
Dependent Claim
28 words
The method of claim 26 wherein the combining occurs in a reactor and with a pressure within the reactor at from about 1 Torr to about 10 Torr.
Claim 37
Dependent Claim
37 words
The method of claim 26 wherein the combining occurs in a reactor and simultaneously with the forming; a pressure within the reactor being at from about 1 Torr to about 10 Torr during the combining and forming.
Claim 38
Dependent Claim
28 words
The method of claim 26 wherein the combining occurs in a reactor and with a pressure within the reactor at from about 300 mTorr to about 10 Torr.
Claim 39
Dependent Claim
61 words
A semiconductor processing method, comprising: subjecting a gaseous precursor compound to a plasma treatment to form a layer of first compound over a semiconductive substrate, the gaseous precursor compound comprising carbon and silicon, and the first compound comprising carbon and silicon; and exposing the layer to oxygen to convert the first compound to a second compound comprising silicon, carbon and oxygen.
Claim 40
Dependent Claim
61 words
A semiconductor processing method, comprising: subjecting a gaseous precursor compound to a plasma treatment to form a layer of first compound over a semiconductive substrate, the gaseous precursor compound comprising carbon and silicon, and the first compound comprising carbon and silicon; and exposing the layer to oxygen to convert the first compound to a second compound comprising silicon, carbon and oxygen.
Claim 41
Dependent Claim
28 words
The method of claim 34 wherein the compound consists essentially of carbon, hydrogen and silicon, and wherein the second compound consists essentially of carbon, hydrogen, silicon and oxygen.
Claim 42
Dependent Claim
22 words
The method of claim 34 wherein the oxygen is in the form of O 3 , O 2 or N 2 O.
Claim 43
Dependent Claim
28 words
The method of claim 34 wherein the oxygen is generated by exposing one or more of O 3 , N 2 O and O 2 to ultraviolet light.
Claim 44
Dependent Claim
28 words
The method of claim 34 wherein the oxygen is generated by exposing one or more of O 3 , N 2 O and O 2 to a plasma.
Claim 45
Dependent Claim
40 words
The method of claim 34 wherein the gaseous precursor comprises (CH 3 ) y SiH x , wherein y is from 1 to 4 and x is from 0 to 3, and the first compound comprises carbon, hydrogen and silicon.
Claim 46
Dependent Claim
40 words
The method of claim 34 wherein the majority of the carbon present in the second compound is in the form of methyl groups, and wherein the methyl groups comprise from 10% to about 15% of the second compound (mole percent).
Claim 47
Dependent Claim
41 words
The method of claim 34 wherein substantially all of the by carbon present in the second compound is in the form of methyl groups, and wherein the methyl groups comprise from 10% to about 15% of the second compound (mole percent).
Claim 48
Dependent Claim
22 words
The method of claim 34 wherein the carbon present in the first and second compounds is in the form of hydrocarbon groups.
Claim 49
Dependent Claim
31 words
The method of claim 34 wherein the exposing occurs in a reactor and with a pressure within the reactor at greater than 0 Torr and no greater than about 1 atmosphere.
Claim 50
Dependent Claim
55 words
A semiconductor processing method, comprising: subjecting methylsilane to a plasma treatment to form a layer over a semiconductive substrate, the layer comprising silicon bound to CH 3 groups; and exposing the layer to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as to the CH 3 groups.
Claim 51
Dependent Claim
55 words
A semiconductor processing method, comprising: subjecting methylsilane to a plasma treatment to form a layer over a semiconductive substrate, the layer comprising silicon bound to CH 3 groups; and exposing the layer to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as to the CH 3 groups.
Claim 52
Dependent Claim
19 words
The method of claim 44 wherein the exposing occurs after and in a separate discrete step from the subjecting.
Claim 53
Dependent Claim
22 words
The method of claim 44 wherein the oxygen is in the form of O 3 , O 2 or N 2 O.
Claim 54
Dependent Claim
28 words
The method of claim 44 wherein the oxygen is generated by exposing one or more of O 3 , O 2 and N 2 O to ultraviolet light.
Claim 55
Dependent Claim
27 words
The method of claim 44 wherein the oxygen is generated by exposing one or more of O 3 , O 2 and N 2 O to plasma.
Claim 56
Dependent Claim
26 words
The method of claim 44 wherein the methyl groups within the insulative compound comprise from about 10% to about 15% of the insulative compound (mole percent).
Claim 57
Dependent Claim
31 words
The method of claim 44 wherein the exposing occurs in a reactor and with a pressure within the reactor at greater than 0 Torr and no greater than about 1 atmosphere.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-05 | 2004-06-05 | 2004-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-05 | 2008-06-05 | 2008-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-05 | 2012-06-05 | 2012-12-05 | $7700.00 | Window Closed / Lapsed |