US6239028B1
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Methods for forming iridium-containing films on substrates
Assignee: Micron Technology Inc
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Filing: 1998-09-03
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Granted: 2001-05-29
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Expires: 2018-09-03
Abstract
Abstract A method of forming an iridium-containing film on a substrate, such as a semiconductor wafer using complexes of the formula LyIrXz, wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N2, PX3, PR3, P(OR)3, AsX3, AsR3, As(OR)3, SbX3, SbR3, Sb(OR)3, NHxR3-x, CNR, and RCN, wherein R is an organic group and X is a halide; y=1 to 4; z=1 to 4; x=0 to 3.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
141 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and forming an iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
141 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and forming an iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.
Claim 6
Dependent Claim
17 words
The method of claim 1 wherein each R group is a C 1 -C 8 organic group.
Claim 7
Dependent Claim
17 words
The method of claim 5 wherein each R group is a C 1 -C 5 organic group.
Claim 8
Dependent Claim
17 words
The method of claim 6 wherein each R group is a C 1 -C 4 alkyl moiety.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the precursor composition is a liquid.
Claim 10
Dependent Claim
17 words
The method of claim 8 wherein the liquid precursor composition comprises a solid dissolved in a solvent.
Claim 11
Dependent Claim
18 words
The method of claim 1 wherein the precursor composition is vaporized in the presence of a carrier gas.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein the precursor composition is vaporized in the presence of a reaction gas.
Claim 13
Dependent Claim
13 words
The method of claim 11 wherein the reaction gas is a nonhydrogen gas.
Claim 14
Dependent Claim
17 words
The method of claim 1 wherein the iridium-containing film is a single transition metal or alloy film.
Claim 15
Independent Claim
166 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 16
Independent Claim
166 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 17
Independent Claim
135 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and forming an iridium-containing film from the precursor composition on a surface of the substrate.
Claim 18
Independent Claim
135 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and forming an iridium-containing film from the precursor composition on a surface of the substrate.
Claim 19
Dependent Claim
30 words
The method of claim 15 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.
Claim 20
Dependent Claim
12 words
The method of claim 16 wherein the precursor composition is a liquid.
Claim 21
Independent Claim
155 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more solvents and one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form an iridium-containing film on a surface of the substrate.
Claim 22
Independent Claim
155 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor composition comprising one or more solvents and one or more complexes of the formula: L y IrY z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3; y=1 to 4; and z=1 to 4; and vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form an iridium-containing film on a surface of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |