US5096737A
Expired / Lapsed
US
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Ligand stabilized +1 metal beta-diketonate coordination complexes and their use in chemical vapor deposition of metal thin films
Assignee: GlobalFoundries Inc
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Filing: 1990-10-24
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Granted: 1992-03-17
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Expires: 2010-10-24
Abstract
Abstract Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.
Inventors
- 👤 Thomas H. Baum
- 👤 Carl E. Larson
- 👤 Scott K. Reynolds
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:25
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; H; H05; H05K; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
123 words
A method for chemical vapor deposition of a metal selected from the group consisting of copper, silver, rhodium and iridium from a ligand stabilized (+1) coordination complex of said metal comprising the steps of (a) heating a substrate onto which deposition of said metal is to occur, said substrate being located in a deposition chamber, (b) producing a vapor consisting essectially of a precursor cohtaining said metal in said chamber in the vicinity of said substrate, said precursor comprising a beta-diketone coordinated to said metal and at least one stabilizing ligand bonded to said metal, said metal to be deposited being in the (+1) oxidation state, and (c) decomposing said vapor to deposit said metal on said substrate in the (0) oxidation state.
Claim 2
Independent Claim
123 words
A method for chemical vapor deposition of a metal selected from the group consisting of copper, silver, rhodium and iridium from a ligand stabilized (+1) coordination complex of said metal comprising the steps of (a) heating a substrate onto which deposition of said metal is to occur, said substrate being located in a deposition chamber, (b) producing a vapor consisting essectially of a precursor cohtaining said metal in said chamber in the vicinity of said substrate, said precursor comprising a beta-diketone coordinated to said metal and at least one stabilizing ligand bonded to said metal, said metal to be deposited being in the (+1) oxidation state, and (c) decomposing said vapor to deposit said metal on said substrate in the (0) oxidation state.
Claim 3
Dependent Claim
11 words
The method of claim 1 which comprises a thermal heating means.
Claim 4
Dependent Claim
12 words
The method of claim 1 which comprises a laser induced heating means.
Claim 5
Dependent Claim
19 words
The method in claim 1 which comprises a laser induced decomposition of said compounds via ultraviolet wavelengths of light.
Claim 6
Dependent Claim
13 words
The method of claim 1 which comprises the use of a plasma method.
Claim 7
Dependent Claim
51 words
The method of claim 1 wherein the beta-diketone has the formula R'COCHRCOR" where R is --H, methyl, ethyl, or halogen, and where R' and R" are selected from the group consisting of C n H.sub.(2n+1), C n F.sub.(2n+1), aryl and substitited aryl where n is an integer from 1 to 4.
Claim 8
Dependent Claim
15 words
The method of claim 1 wherein the beta-diketone is selected from acetylacetone, trifluoroacetylacetone and hexafluoroacetylacetone.
Claim 9
Dependent Claim
24 words
The method of claim 1 wherein the stabilizing ligand is selected fron the group consisting of substituted and unsubstituted aklynes, olefins, dienes and phosphines.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein the precursor is 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate or dimethyl 1,5-cyclooctadiene copper (I) hexafluoroacetylacetonate.
Claim 11
Dependent Claim
56 words
The method of claim 6 wherein R is H and R' and R" are selected from the group consisting of --CH 3 , --CF 3 , --C 2 H 5 , --C 2 F 5 , --C 3 H 7&l , --C 3 F 7 , --C 4 H 9 and --C 4 F 9 .
Claim 12
Dependent Claim
35 words
The method of claim 8 wherein the stabilizing ligand is selected from the group consisting of 1,5-cyclooctadiene, fluoro-1,5-cyclooctadiene, cyclooctene, methylcyclooctene, cyclooctatetraene, norbornene, norbornadiene, tricyclo[5.2.1.0]-deca-2,6-diene, alkyl-substituted tricyclo[5.2.1.0]-deca-2,6-diene, 1,4-cyclohexadiene, acetylene, alkyl-substituted acetylene, halogen-substituted acetylene and trimethyl phosphine.
Claim 13
Dependent Claim
33 words
The method of claim 11 wherein the dimethyl 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate is selected from the group consisting of 1,5-dimethyl 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate, 1,6-dimethyl 1,5-cyclooctadiene copper(I) hexafluoroacetylacetonate, and other substituted 1,5-cyclooctadiens and mixtures thereof.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-17 | 1999-09-16 | 2000-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-17 | 2003-09-16 | 2004-03-17 | $7700.00 | Window Closed / Lapsed |