← Back to Patent Explorer
US5760474A Expired / Lapsed US ⏱️ 0.0 years remaining

Capacitor, integrated circuitry, diffusion barriers, and method for forming an electrically conductive diffusion barrier

Assignee: Micron Technology Inc
•
Filing: 1996-07-09
•
Granted: 1998-06-02
•
Expires: 2016-07-09
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A capacitor having a pair of conductive electrodes separated by a dielectric layer and wherein at least one of the electrodes comprise Ti x Al 1-x N, and wherein the variable "x" lies in a range of about 0.4 to about 0.8. The invention also contemplates a method for forming an electrically conductive diffusion barrier on a silicon substrate and which comprises providing a chemical vapor deposition reactor having a chamber; positioning the silicon substrate in the chemical vapor deposition reactor chamber; providing a source of gaseous titanium aluminum and nitrogen to the chemical vapor deposition reactor chamber; and providing temperature and pressure conditions in the chemical vapor deposition reactor chamber effective to deposit an electrically conductive diffusion barrier layer on the silicon substrate comprising Ti x Al 1-x N, and wherein the variable "x" is in a range of about 0.4 to about 0.8.

Inventors

  • 👤 Paul J. Schuele

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:12
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 179 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the underlying node; a layer of substantially unoxidized titanium silicide positioned entirely within the contact opening and disposed in conductive electrical connection with the underlying node; a substantially unoxidized lower cell plate comprising a layer of Ti x Al 1-x N, and wherein the "x" lies in a range of about 0.4 to about 0.8, and wherein a portion of the lower cell plate is received in the contact opening and is positioned in conductive electrical connection with the underlying layer of unoxidized titanium silicide, and another portion of the lower cell plate is positioned outside of the contact opening; a dielectric layer positioned in contact with and covering the entire lower cell plate; and an upper cell plate positioned on the dielectric layer and having a portion which is positioned in the contact opening and another portion which is positioned outside of the contact opening.
Claim 2
Dependent Claim 179 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the underlying node; a layer of substantially unoxidized titanium silicide positioned entirely within the contact opening and disposed in conductive electrical connection with the underlying node; a substantially unoxidized lower cell plate comprising a layer of Ti x Al 1-x N, and wherein the "x" lies in a range of about 0.4 to about 0.8, and wherein a portion of the lower cell plate is received in the contact opening and is positioned in conductive electrical connection with the underlying layer of unoxidized titanium silicide, and another portion of the lower cell plate is positioned outside of the contact opening; a dielectric layer positioned in contact with and covering the entire lower cell plate; and an upper cell plate positioned on the dielectric layer and having a portion which is positioned in the contact opening and another portion which is positioned outside of the contact opening.
Claim 3
Dependent Claim 29 words
A capacitor as claimed in claim 1, wherein the unoxidized lower cell plate has a thickness of about 300 to about 1500 Angstroms, and wherein "x" is about 0.6.
Claim 4
Dependent Claim 25 words
A capacitor as claimed in claim 1, wherein the unoxidized lower cell plate has a thickness of about 600 Angstroms and "x" is about 0.6.
Claim 5
Dependent Claim 129 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the node; a conductive plug received in the contact opening and positioned in conductive electrical connection with the underlying node; a substantially unoxidized lower electrode positioned outwardly of the layer of silicon dioxide and disposed in conductive electrical connection with the conductive plug and the node; a film of Ti x Al 1-x N positioned on the lower electrode, and wherein the "x" lies in a range of about 0.4 to about 0.8; a dielectric layer positioned in contact with and covering the entire lower electrode; and an upper electrode positioned outwardly of the dielectric layer.
Claim 6
Dependent Claim 129 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the node; a conductive plug received in the contact opening and positioned in conductive electrical connection with the underlying node; a substantially unoxidized lower electrode positioned outwardly of the layer of silicon dioxide and disposed in conductive electrical connection with the conductive plug and the node; a film of Ti x Al 1-x N positioned on the lower electrode, and wherein the "x" lies in a range of about 0.4 to about 0.8; a dielectric layer positioned in contact with and covering the entire lower electrode; and an upper electrode positioned outwardly of the dielectric layer.

References Cited (Backward Citations)

US4842710A Cited
US5096749A Cited
US5318840A Cited
US5231306A Cited
US5656383A Cited
US5554866A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-06-01 2001-12-01 2002-06-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-06-01 2005-12-01 2006-06-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-06-01 2009-12-01 2010-06-02 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag