Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
179 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the underlying node; a layer of substantially unoxidized titanium silicide positioned entirely within the contact opening and disposed in conductive electrical connection with the underlying node; a substantially unoxidized lower cell plate comprising a layer of Ti x Al 1-x N, and wherein the "x" lies in a range of about 0.4 to about 0.8, and wherein a portion of the lower cell plate is received in the contact opening and is positioned in conductive electrical connection with the underlying layer of unoxidized titanium silicide, and another portion of the lower cell plate is positioned outside of the contact opening; a dielectric layer positioned in contact with and covering the entire lower cell plate; and an upper cell plate positioned on the dielectric layer and having a portion which is positioned in the contact opening and another portion which is positioned outside of the contact opening.
Claim 2
Dependent Claim
179 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the underlying node; a layer of substantially unoxidized titanium silicide positioned entirely within the contact opening and disposed in conductive electrical connection with the underlying node; a substantially unoxidized lower cell plate comprising a layer of Ti x Al 1-x N, and wherein the "x" lies in a range of about 0.4 to about 0.8, and wherein a portion of the lower cell plate is received in the contact opening and is positioned in conductive electrical connection with the underlying layer of unoxidized titanium silicide, and another portion of the lower cell plate is positioned outside of the contact opening; a dielectric layer positioned in contact with and covering the entire lower cell plate; and an upper cell plate positioned on the dielectric layer and having a portion which is positioned in the contact opening and another portion which is positioned outside of the contact opening.
Claim 3
Dependent Claim
29 words
A capacitor as claimed in claim 1, wherein the unoxidized lower cell plate has a thickness of about 300 to about 1500 Angstroms, and wherein "x" is about 0.6.
Claim 4
Dependent Claim
25 words
A capacitor as claimed in claim 1, wherein the unoxidized lower cell plate has a thickness of about 600 Angstroms and "x" is about 0.6.
Claim 5
Dependent Claim
129 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the node; a conductive plug received in the contact opening and positioned in conductive electrical connection with the underlying node; a substantially unoxidized lower electrode positioned outwardly of the layer of silicon dioxide and disposed in conductive electrical connection with the conductive plug and the node; a film of Ti x Al 1-x N positioned on the lower electrode, and wherein the "x" lies in a range of about 0.4 to about 0.8; a dielectric layer positioned in contact with and covering the entire lower electrode; and an upper electrode positioned outwardly of the dielectric layer.
Claim 6
Dependent Claim
129 words
A capacitor, comprising: a silicon substrate having a node to which electrical connection is to be made; a layer of silicon dioxide positioned on the silicon substrate and defining a contact opening to the node; a conductive plug received in the contact opening and positioned in conductive electrical connection with the underlying node; a substantially unoxidized lower electrode positioned outwardly of the layer of silicon dioxide and disposed in conductive electrical connection with the conductive plug and the node; a film of Ti x Al 1-x N positioned on the lower electrode, and wherein the "x" lies in a range of about 0.4 to about 0.8; a dielectric layer positioned in contact with and covering the entire lower electrode; and an upper electrode positioned outwardly of the dielectric layer.