US5231306A
Expired / Lapsed
US
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Titanium/aluminum/nitrogen material for semiconductor devices
Assignee: Round Rock Research LLC
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Filing: 1992-01-31
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Granted: 1993-07-27
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Expires: 2012-01-31
Abstract
Abstract A barrier material for use in preventing interdiffusion of silicon and aluminum at silicon/aluminum interfaces comprises a layer of titanium, aluminum, and nitrogen between about 100 ANGSTROM and 1000 ANGSTROM thick. The barrier material comprises between 1% and 20% aluminum, between 30% and 60% titanium, and between 30% and 60% nitrogen. The TiAlN material is more resistant to diffusion than TiN and can be etched and sputtered like TiN. It has better thermal budget than TiN and better stability on silicon, and thus can replace TiN in many of its uses in semiconductor devices.
Inventors
- 👤 Scott G. Meikle
- 👤 Sung C. Kim
- 👤 Donald L. Westmoreland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:13
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/00; H10W72/50; H10W72/59; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
26 words
A semiconductor device comprising: a layer having silicon; and a separate diffusion barrier layer of alloy comprising titanium, aluminum, and nitrogen deposited on said silicon layer.
Claim 2
Dependent Claim
26 words
A semiconductor device comprising: a layer having silicon; and a separate diffusion barrier layer of alloy comprising titanium, aluminum, and nitrogen deposited on said silicon layer.
Claim 3
Dependent Claim
19 words
A semiconductor device as in claim 1 and further comprising a layer of metal on said layer of alloy.
Claim 4
Dependent Claim
11 words
A semiconductor as in claim 2 wherein said metal is aluminum.
Claim 5
Dependent Claim
16 words
A semiconductor device as in claim 1 wherein said alloy comprises between 1% and 20% aluminum.
Claim 6
Dependent Claim
16 words
A semiconductor device as in claim 1 wherein said alloy comprises between 30% and 50% titanium.
Claim 7
Dependent Claim
16 words
A semiconductor device as in claim 1 wherein said alloy comprises between 30% and 60% nitrogen.
Claim 8
Dependent Claim
18 words
A semiconductor device as in claim 1 wherein said layer of alloy is between 100Å and 1000Å thick.
Claim 9
Dependent Claim
21 words
A semiconductor device as in claim 7 wherein said layer of alloy varies in thickness between about 175Å and about 200Å.
Claim 10
Dependent Claim
14 words
A semiconductor device as in claim 2, wherein said silicon substrate comprises silicon dioxide.
Claim 11
Dependent Claim
72 words
A diffusion barrier located between a silicon substrate and a metal film in a semiconductor device, said diffusion barrier comprising: a metal nitride film formed on said silicon substrate, said metal nitride film containing aluminum with an atomic concentration between 1% and 20%, containing titanium with an atomic concentration between 30% and 50%, and nitrogen with an atomic concentration between 30% and 60%, said metal film formed on said metal nitride film.
Claim 12
Dependent Claim
72 words
A diffusion barrier located between a silicon substrate and a metal film in a semiconductor device, said diffusion barrier comprising: a metal nitride film formed on said silicon substrate, said metal nitride film containing aluminum with an atomic concentration between 1% and 20%, containing titanium with an atomic concentration between 30% and 50%, and nitrogen with an atomic concentration between 30% and 60%, said metal film formed on said metal nitride film.
References Cited (Backward Citations)
US4823182A
Cited
US4980239A
Cited
US4926237A
Cited
US4990997A
Cited
US4976839A
Cited
US4977440A
Cited
US5093710A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |